Standard Power MOSFETs RFM12N18, RFM12N20, RFP12N18, RFP12N20 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 180 and 200 V ros(on): 0.25 Q Features: a SOA is power-dissipation limited Nanosecond switching speeds = Linear transfer characteristics a High input impedance = Majority carrier device The RFM12N18 and RFM12N20 and the RFP12N18 and RFP12N20* are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate- drive power. These types can be operated directly from integrated circuits. The RFM-types are supplied in the JEDEC TO-204AA steel package and the RFP-types in the JEDEC TO-220AB plastic package. *The RFM and RFP series were formerly RCA developmental numbers TA9293 and TA9294, respectively. MAXIMUM RATINGS, Absolute-Maximum Values (Tc=25 C): RFM12N18 DRAIN-SOURCE VOLTAGE ........... Voss 180 DRAIN-GATE VOLTAGE (Res=1 MQ) .. Vocr 180 GATE-SOURCE VOLTAGE............. Ves DRAIN CURRENT RMS Continuous....... 0.0.0.0. .00 eee lo Pulsed .... cece eee c eee cece cent eres lpm POWER DISSIPATION ; @ Te=25CS wee eect ee eens Pr 100 Derate above Tc=25C 0.8 OPERATING AND STORAGE TEMPERATURE ..........-......5- Tj, Tstg = _.. 3-416 File Number 1461 $ 92CS -33741 N-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATIONS RFM12N18 RFM12N20 SOURCE RFP12N18 RFP12N20 DRAIN (FLANGE) OC RFM12N20 200 200 100 0.8 ORAIN (FLANGE } GATE 92CS-3780! JEDEC TO-204AA TOP VIEW 92CS-39528 JEDEC TO-220AB +20 12 30 ~55 to +150 REP12N18 180 180 75 0.6 SOURCE | d, = DRAIN GATE RFP12N20 200 200 75 0.6 wre CStandard Power MOSFETs RFM12N18, RFM12N20, RFP12N18, RFP12N20 ELECTRICAL CHARACTERISTICS, Af Case Temperature (T-)=25C unless otherwise specitied LIMITS TEST RFM12N18 RFM12N20 CHARACTERISTIC SYMBOL CONDITIONS RFP12N18 RFP12N20 UNITS Min. Max. Min. Max. Drain-Source Breakdown Voltage BVoss Ipb=1 MA 180 _ 200 _ Vv Vas=0 Gate-Threshold Voltage Vas(th) Ves=Vos 2 4 2 4 Vv Ip=1 mA Zero-Gate Voltage Drain Current loss Vps=145 V _ 1 _ _ Vos=160 V _ _ _ 1 Te=125C BA Vos=145 V _ 50 _ Vos=1 60 V _ _ 50 Gate-Source Leakage Current lass Vas=+20 V _ 100 - 100 nA Vos=0 Drain-Source On Voltage Vps(on) Ip=6 A _- 15 - 1.5 Ves=10 V Vv ln=12 A _ 3.6 _ 3.6 Ves=10 Vv Static Drain-Source On Resistance ros(on) In=6 A - 0.25 _ 0.25 2 Vas=10 V Forward Transconductance Grte* Vps=10 V 4 _ 4 - mho Ip=6 A Input Capacitance Ciss Vps=25 V _ 1700 _ 1700 Output Capacitance Coss Vas=0 V = 600 _ 600 pF Reverse-Transfer Capacitance Crs f=1 MHz = 300) _ 300 Turn-On Delay Time ta(on) Vpo=100 V 35(typ) 50 |35(typ)| 50 Rise Time t Ipb=6 A 30(typ)| 200 l30(typ)| 200 ns Turn-Off Delay Time ta(off) Rgen=Rgs=50Q fl20(typ){ 180 f20(typ)! 180 Fall Time tr Ves=10 V NOS5(typ)/ 160 [105(typ)| 160 Thermal Resistance Junction-to-Case Rec RFM12N18, _ 1.25 ~ 1.25 RFM12N20 C/W RFP12N18, _ 1.67 _ 1.67 RFP12N20 , . SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS LIMITS s TEST RFM12N18 RFM12N20 CHARACTERISTIC SYMBOL CONDITIONS RFP12N18 RFP12N20 UNITS MIN. MAX. MIN. MAX. Diode Forward Voltage Vsp# Isn=6 A _ 4.4 _ 1.4 Vv lr=4A Reverse Recovery Time tr die/dk=100 A/ps 325(typ) 325(typ) ns Pulsed: Pulse duration=300 ys max., duty cycle=2%. 3-417Standard Power MOSFETs RFM12N18, RFM12N20, RFP12N18, RFP12N20 g| CASE TEMPERATURE (Tc) =25C (CURVES MUST BE DERATEO LINEARLY WITH INCREASE IN TEMPERATURE) DRAIN CURRENT (Ip)-A | 10 (oo 1000 DRAIN-TO-SOURCE VOLTAGE (Vpg)V 92CS- 3649571 Fig. 1 - Maximum safe operating areas for ail types. oO 50 100 180 92CS- 36690 JUNCTION TEMPERATURE (T))*C 9208-36514 Fig. 2 - Power dissipation vs. case temperatura derating curve Fig. 3 - Typical normalized gate threshold voltage as a function for all types. : of junction temperature for ail types. Ti = 5 a w xy a a = a Ss z Fig. 4 - Normalized drain-to-source on resistance as a function SOURCE Ston)) BD w 8 z= 2 a wt 4 Ip= GA, Vgg lov JUNCTION TEMPERATURE (T))~-*C Vos =10V PULSE TEST PULSE DURATION -80nS DUTY CYCLE <2% 2 a a e 2 iy e e 2 3 Zz < a us E < e a z o ! 9208-36515 of junction temperature for all types. 3 4 5 6 8 GATE-TO-SOURCE VOLTAGE (Vgs) Vv g92cs-364at Fig. 5 - Typical transfer characteristics for all types. 3-418