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DATA SH EET

Product data sheet

Supersedes data of 2004 Apr 02

2004 Jun 14

DISCRETE SEMICONDUCTORS

PMEGXX10BEA;

PMEGXX10BEV

1 A very low VF MEGA Schottky

barrier rectifier

2004 Jun 14 2

NXP Semiconductors Product data sheet

1 A very low VF MEGA Schottky

barrier rectifier PMEGXX10BEA;

PMEGXX10BEV

FEATURES

•Forward current: 1 A

•Reverse voltag e s : 20 V, 30 V, 40 V

•Very low forward voltage

•Ultra small and very small plas tic SMD pa cka ge

•Power dissipation comparable to SOT23.

APPLICATIONS

•High efficiency DC-to-DC conv ersio n

•Voltage clamping

•Protection circuits

•Low voltage rectification

•Blocking diodes

•Low power cons ump tion applications.

DESCRIPTION

Planar Maximum Efficiency Ge neral Application (MEGA)

Schottky barrier rectifier with an integrated guard ring for

stress protection, encapsulated in a very small SOD323

(SC-76) and ultra sma ll SOT666 SMD plastic p ac kage.

MARKING

QUICK REFERENCE DATA

PINNING

TYPE NUMBER MARKING CODE

PMEG2010BEA V1

PMEG3010BEA V2

PMEG4010BEA V3

PMEG2010BEV G6

PMEG3010BEV G5

PMEG4010BEV G4

SYMBOL PARAMETER MAX. UNIT

IFforward cu rrent 1 A

VRreverse vo ltage 20; 30; 40 V

PIN DESCRIPTION

PMEGXX10BEA (see Fig.1)

1cathode

2anode

PMEGXX10BEV (see Fig.2)

1, 2, 5, 6 cathode

3, 4 anode

sym00

Fig.1 Simplified outline (SOD323; SC-76) and

symbol.

The marking bar indicates the cathode.

123

456

sym03

,6 3,

Fig.2 Simplified outline (SOT666) and symbol.

2004 Jun 14 3

NXP Semiconductors Pr oduct data sheet

1 A very low VF MEGA Schottky

barrier rectifier PMEGXX10BEA;

PMEGXX10BEV

ORDERING INFORMATION

LIMITING VALUES

In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).

Notes

1. Refer to SOD323 (SC-76) and SOT666 standard mounting conditions.

2. Only valid if pins 3 and 4 are con nected in parallel (SOT66 6 package).

3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses

PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV)

rating will be available on request.

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

PMEGXX10BEA −plastic surface mounted package; 2 leads SOD323

PMEGXX10BEV plastic surface mounted package; 6 leads SOT666

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRcontinuous reverse voltage

PMEG2010BEA/PMEG2010BEV −20 V

PMEG3010BEA/PMEG3010BEV −30 V

PMEG4010BEA/PMEG4010BEV −40 V

IFcontinuous forward current Ts ≤ 55 °C; note 1 −1 A

IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.5; note 2 −3.5 A

IFSM non-repetitive peak forward current tp = 8 ms; square wave;

note 2 −10 A

Tjjunction temperature note 3 −150 °C

Tamb operating ambient temperature note 3 −65 +150 °C

Tstg storage temperature −65 +150 °C

2004 Jun 14 4

NXP Semiconductors Pr oduct data sheet

1 A very low VF MEGA Schottky

barrier rectifier PMEGXX10BEA;

PMEGXX10BEV

THERMAL CHARACTE RISTICS

Notes

1. Refer to SOD323 (SC-76) standard mounting conditions.

2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses

PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV)

rating will be available on request.

3. Device mounted o n an FR4 printed-circuit board with copper clad 10 × 10 mm.

4. Solder point o f c athode tab.

5. Refer to SOT666 standard mounting conditions.

6. Only valid if pins 3 and 4 are con nected in parallel (SOT66 6 package).

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

PMEGXX10BEA (SOD323)

Rth(j-a) thermal resistance from junction to

ambient in free air; notes 1 and 2 450 K/W

in free air; notes 2 and 3 210 K/W

Rth(j-s) thermal resistance from junction to

soldering point note 4 90 K/W

PMEGXX10BEV (SOT666)

Rth(j-a) thermal resistance from junction to

ambient in free air; notes 2 and 5 405 K/W

in free air; notes 2 and 6 215 K/W

Rth(j-s) thermal resistance from junction to

soldering point note 4 80 K/W

SYMBOL PARAMETER CONDITIONS PMEG2010BEA/

PMEG2010BEV PMEG3010BEA/

PMEG3010BEV PMEG4010BEA/

PMEG4010BEV UNIT

TYP. MAX. TYP. MAX. TYP. MAX.

VFforward voltage IF = 0.1 mA 90 130 90 130 95 130 mV

IF = 1 mA 150 190 150 200 155 210 mV

IF = 10 mA 210 240 215 250 220 270 mV

IF = 100 mA 280 330 285 340 295 350 mV

IF = 500 mA 355 390 380 430 420 470 mV

IF = 1 000 mA 420 500 450 560 540 640 mV

IRcontinuous

reverse current VR = 10 V; note 1 15 40 12 30 720 μA

VR = 20 V; note 1 40 200 −−−−μA

VR = 30 V; note 1 −−40 150 − − μA

VR = 40 V; note 1 −−−−30 100 μA

Cddiode capacit an ce VR = 1 V; f = 1 MHz 66 80 55 70 43 50 pF

2004 Jun 14 5

NXP Semiconductors Pr oduct data sheet

1 A very low VF MEGA Schottky

barrier rectifier PMEGXX10BEA;

PMEGXX10BEV

GRAPHICAL DATA

handbook, halfpage

0.6

VF (V)

0.4

(mA)

0.20

104

103

102

10−1

MHC673

(1) (2) (3)

Fig.3 Forward current as a function of forward

voltage; typical values.

PMEG2010BEA/PMEG2010BEV

(1) Tamb = 150 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

20105015

MHC674

105

104

103

102

1VR (V)

(μA) (1)

(3)

(2)

Fig.4 Reverse current as a fun ction of reverse

voltage; typical values.

PMEG2010BEA/PMEG2010BEV

(1) Tamb = 150 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

0 5 10 20

VR (V)

120

140

100

(pF)

MHC675

Fig.5 Diode capacitance as a function of reverse

voltage; typical values.

PMEG2010BEA/PMEG2010BEV

Tamb = 25 °C; f = 1 MHz.

handbook, halfpage

0.6

VF (V)

0.4

(mA)

0.20

104

103

102

10−1

MHC676

(1) (2) (3)

Fig.6 Forward current as a function of forward

voltage; typical values.

PMEG3010BEA/PMEG3010BEV

(1) Tamb = 150 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

2004 Jun 14 6

NXP Semiconductors Pr oduct data sheet

1 A very low VF MEGA Schottky

barrier rectifier PMEGXX10BEA;

PMEGXX10BEV

VR (V)

1050202515

(μA)

105

104

103

102

MHC677

(1)

(3)

(2)

Fig.7 Reverse current as a fun ction of reverse

voltage; typical values.

PMEG3010BEA/PMEG3010BEV

(1) Tamb = 150 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

0 5 10 20

VR (V)

120

100

(pF)

MHC678

Fig.8 Diode capacitance as a function of reverse

voltage; typical values.

PMEG3010BEA/PMEG3010BEV

Tamb = 25 °C; f = 1 MHz.

handbook, halfpage

0.6

VF (V)

0.4

(mA)

0.20

104

103

102

10−1

MHC679

(1) (2) (3)

Fig.9 Forward current as a function of forward

voltage; typical values.

PMEG4010BEA/PMEG4010BEV

(1) Tamb = 150 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

402010030

MHC680

105

104

103

102

1VR (V)

(μA) (1)

(3)

(2)

Fig.10 Reverse current as a function of reverse

voltage; typical values.

PMEG4010BEA/PMEG4010BEV

(1) Tamb = 150 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

2004 Jun 14 7

NXP Semiconductors Pr oduct data sheet

1 A very low VF MEGA Schottky

barrier rectifier PMEGXX10BEA;

PMEGXX10BEV

handbook, halfpage

0 5 10 20

100

MHC681

VR (V)

(pF)

Fig.11 Diod e ca pacita nce as a funct ion of rev erse

voltage; typical values.

PMEG4010BEA/PMEG4010BEV

Tamb = 25 °C; f = 1 MHz.

2004 Jun 14 8

NXP Semiconductors Pr oduct data sheet

1 A very low VF MEGA Schottky

barrier rectifier PMEGXX10BEA;

PMEGXX10BEV

PACKAGE OUTLINES

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOD323 SC-76

SOD32

03-12-17

06-03-16

Note

1. The marking bar indicates the cathode

UNIT A

mm 0.05

1.1

0.8 0.40

0.25 0.25

0.10 1.8

1.6 1.35

1.15 2.7

2.3 0.45

0.15

max

DIMENSIONS (mm are the original dimensions)

lastic surface-mounted package; 2 leads

(1)

2 mm

scale

bpc D E HDQ

0.25

0.15

Lpv

0.2

detail X

A1c

HDvA

2004 Jun 14 9

NXP Semiconductors Pr oduct data sheet

1 A very low VF MEGA Schottky

barrier rectifier PMEGXX10BEA;

PMEGXX10BEV

UNIT bpcDE e1HELpw

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-08

06-03-16

IEC JEDEC JEITA

mm 0.27

0.17 0.18

0.08 1.7

1.5 1.3

1.1 0.5

1.0 1.7

1.5 0.1

0.1

DIMENSIONS (mm are the original dimensions)

0.3

0.1

SOT666

pin 1 index

detail X

0 1 2 mm

scale

0.6

0.5

123

456

Plastic surface-mounted package; 6 leads SOT66

wMA

2004 Jun 14 10

NXP Semiconductors Pr oduct data sheet

1 A very low VF MEGA Schottky

barrier rectifier PMEGXX10BEA;

PMEGXX10BEV

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly issued document before initiating or co mpleting a design.

2. The product s tatus of device(s) described in this document may have changed since this document was pub lis hed

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

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not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R76/04/pp11 Date of release: 2004 Jun 14 Document orde r number: 9397 750 13234