CDIL BCWE8 FG GENERAL PURPOSE TRANSISTOR P-N-P transistor Marking PACKAGE OUTLINE DETAILS BCW67A = DA ALL DIMENSIONS IN mm . BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG + BCW68H = DH 0.48 6.38 | 3 Pin configuration 1 = BASE 2.6 +. 2= EMITTER 2.4 3 = COLLECTOR t 1,02 9 1 0.8 0.60 2.00 2 0.40 1.80 ABSOLUTE MAXIMUM RATINGS BCW 67series 68 series Collector-base voltage (open emitter) -VcBo max. 45 60 V Collector-emitter voltage (open base) ~VCEO max. 32 45 V Emitterbase voltage (open collector) -VEBO max. 5 Vv Collector current (d.c.) -Ic max. 800 mA Total power dissipation at Tamb = 25C Prot max 225 mW D.C. current gain Ic = 10 mA; Vcg = 1 V BCW67A, 68F hfe min. 75 BCW67B, 68G hrE min. 120 BCW67C, 68H hee min. 180 Ic = 100 mA; Vcp =1V min. 100 BCW67A, 68F hee max. 250 min. 160 BCW67B; 68G hpg max. 400 51CDIL BCW67, A, B, C BCW68, F, G, H min. 250 BCW6/7C, 68H hpr max. 630 Ic = 300 mA; Vcg=1V BCW67A, 68F hee min. 35 BCW67B, 68G hfe min. 60 BCW67C, 68H RE min. 100 RATINGS (at Ta = 25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) -VcBO max. 45 60 V Collector-emitter voltage (open base) -VCEQO max. 32 45 V Emitterbase voltage (open collector) -VEBO max. 5 Vv Collector current (d.c.) -Ic max. 800 mA Total power dissipation at Tamb = 25C Prot max 225 mW Storage temperature Tstg ~55 to +150 i THERMAL CHARACTERISTICS Tj=P th j++ Rth s-a) + Tamb Thermal resistance from junction to ambient Rthj-a 556 556 556 CimW CHARACTERISTICS (at Ta = 25C unless otherwise specified) Collector-emitter breakdown voltage BCW67 series 68 series Ic = 10 mA; Ip = 0 V(BR)CEO min. 32 45 V Ic = 10 pA; Veg = 0 VBR)CES min. 45 60 V Emitter-base breakdown voltage Ig = 10 pA; Ic =0 V(BR)EBO min. 5 Vv Collector cut-off current Vcg =32V; Ip =0V ICES max. 20 - nA VceE=45V; In =0V ICES max. -- 20 nA Vcg = 32 V; Ip = 0 V; Ta = 150C IcES max. 10 - pA Vcr = 45 V; In = 0 V; Ta = 150C ICES max. 10 pA Emitter cut-off current ~~ Ves = 4 V; Ic =0 IEBO max. 20 nA Output capacitance at f = 1 MHz Ig = 0; Vcp =10V Ceo max. 18 pF Input capacitance at f = 1 MHz Ic = 0; Vep=05V Ce max. 105 pF Saturation voltages Ic = 300 mA; Ip = 30 mA VCEsat max. 1.5 Vv Ic = 500 mA; Ip = 50 mA -VBEsat max. 2 Vv Noise figure at Rg = 1 kQ I = 0.2 mA; VcR=5 V f = 1 KHz, BW = 200 Hz NF max. 10 dB Transition frequency at f = 100 MHz Ic = 20 mA; Vcg = 10V fr min. 100 MHz 52