2N3055G - ON SEMICONDUCTOR - searchdatasheet.com

December, 2005 − Rev. 6 1Publication Order Number:

2N3055/D

2N3055(NPN), MJ2955(PNP)

Preferred Device

Complementary Silicon

Power Transistors

Complementary silicon power transistors are designed for

general−purpose switching and amplifier applications.

Features

•DC Current Gain − hFE = 20−70 @ IC = 4 Adc

•Collector−Emitter Saturation Voltage −

VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc

•Excellent Safe Operating Area

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO 60 Vdc

Collector−Emitter Voltage VCER 70 Vdc

Collector−Base Voltage VCB 100 Vdc

Emitter−Base Voltage VEB 7 Vdc

Collector Current − Continuous IC15 Adc

Base Current IB7 Adc

Total Power Dissipation @ TC = 25°C

Derate Above 25°CPD115

0.657 W

W/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −65 to +200 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

160

00 25 50 75 100 125 150 175 200

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

140

120

100

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

15 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

60 VOLTS, 115 WATTS

http://onsemi.com

Preferred devices are recommended choices for future use

and best overall value.

Device Package Shipping

ORDERING INFORMATION

2N3055 TO−204AA 100 Units / Tray

MJ2955G TO−204AA

(Pb−Free)

TO−204AA (TO−3)

CASE 1−07

STYLE 1

100 Units / Tray

2N3055G TO−204AA

(Pb−Free) 100 Units / Tray

MJ2955 TO−204AA 100 Units / Tray

MARKING DIAGRAM

xxxx55 = Device Code

xxxx = 2N30 or MJ20

G = Pb−Free Package

A = Location Code

YY = Year

WW = Work Week

MEX = Country of Orgin

xxxx55G

AYYWW

MEX

2N3055(NPN), MJ2955(PNP)

http://onsemi.com

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction−to−Case

ÎÎÎÎ

RqJC

ÎÎÎÎÎÎ

1.52

ÎÎÎ

_C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Max

ÎÎÎ

Unit

OFF CHARACTERISTICS*

Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0) VCEO(sus) 60 − Vdc

Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, RBE = 100 W)VCER(sus) 70 − Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = 30 Vdc, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

−

ÎÎÎ

0.7

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ICEX

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

−

ÎÎÎ

1.0

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

−

ÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS* (Note 1)

DC Current Gain

(IC = 4.0 Adc, VCE = 4.0 Vdc)

(IC = 10 Adc, VCE = 4.0 Vdc)

hFE 20

5.0 70

−

Collector−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 400 mAdc)

(IC = 10 Adc, IB = 3.3 Adc)

VCE(sat) − 1.1

3.0

Vdc

Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) − 1.5 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with Base Forward Biased

(VCE = 40 Vdc, t = 1.0 s, Nonrepetitive)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

Is/b

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

2.87

ÎÎÎ

−

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain − Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎ

2.5

ÎÎÎ

−

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*Small−Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

ÎÎÎ

120

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*Small−Signal Current Gain Cutoff Frequency (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)

ÎÎÎÎ

fhfe

ÎÎÎÎ

ÎÎÎ

−

ÎÎÎ

kHz

*Indicates Within JEDEC Registration. (2N3055)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Figure 2. Active Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.6

0.4

0.2 10 20 40 60

IC, COLLECTOR CURRENT (AMP)

500 ms

1 ms

250 ms

50 ms

BONDING WIRE LIMIT

THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMIT

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 2 is based on TC = 25°C; TJ(pk) is

variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10% but must be

derated for temperature according to Figure 1.

2N3055(NPN), MJ2955(PNP)

http://onsemi.com

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

500

0.1

Figure 3. DC Current Gain, 2N3055 (NPN)

IC, COLLECTOR CURRENT (AMP)

5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10

100

200

hFE, DC CURRENT GAIN

TJ = 150°C

25°C

−55 °C

VCE = 4.0 V

200

0.1

IC, COLLECTOR CURRENT (AMP)

10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10

100

hFE, DC CURRENT GAIN

TJ = 150°C

25°C

−55 °C

VCE = 4.0 V

7.0

300

7.0 7.0

Figure 4. DC Current Gain, MJ2955 (PNP)

2.0

5.0

IB, BASE CURRENT (mA)

010 20 50 100 200 500 1000 2000 5000

1.6

1.2

0.8

0.4

IC = 1.0 A

TJ = 25°C

4.0 A 8.0 A

2.0

IB, BASE CURRENT (mA)

1.6

1.2

0.8

0.4

1.4

0.1

IC, COLLECTOR CURRENT (AMPERES)

0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10

1.0

0.6

0.4

0.2

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

Figure 5. Collector Saturation Region,

2N3055 (NPN)

1.2

0.8

7.0

VBE @ VCE = 4.0 V

2.0

0.1

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 1.0 2.0 3.0 5.0 10

1.2

0.4

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

1.6

0.8

VBE @ VCE = 4.0 V

5.0 10 20 50 100 200 500 1000 2000 5000

IC = 1.0 A

TJ = 25°C

4.0 A 8.0 A

Figure 6. Collector Saturation Region,

MJ2955 (PNP)

Figure 7. “On” Voltages, 2N3055 (NPN) Figure 8. “On” Voltages, MJ2955 (PNP)

2N3055(NPN), MJ2955(PNP)

http://onsemi.com

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO−204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B−−− 1.050 −−− 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N−−− 0.830 −−− 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

−T− SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

−Q−

−Y−

TO−204 (TO−3)

CASE 1−07

ISSUE Z

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

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2N3055/D

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