44 MITSUBISHI SILICON RECTIFIER DIODES SR3AM LOW POWER GENERAL USE LEAD-MOUNTED TYPE DESCRIPTION OUTLINE DRAWING Dimension : mm The Mitsubishi type SR3AM silicon rectifier diodes (SR3AM-2~12) are plastic modifications of the diffused junction type rectifier element. The A type f diode are specially designed for general purpose of small power applications, B15 _ providing average forward current of 2 amperes (Ta=40C) and repetitive Type = peak reverse voltage up to 600 Volts. Cathode mark fF ven \ s FEATURES (White), 2 A special surface passivation and an exclusive transfer mold process elimi- | I nate deterioration due to surrounding atmosphere. 972Max. @ High surge forward current is guaranted. rs = @ Lead bent types are available. | F APPLICATIONS B type < DC power supply for TV set, stereo amplifier, communication equipment, Type _ f DC small motor control. x ify Cathode mark = , 8 (White) qf] 3 7.2Max. (14) ABSOLUTE MAXIMUM RATINGS Voltage class Symbol Parameter Unit 2 4 8 12 VRAM Repetitive peak reverse voltage 100 200 400 600 VASM Non-repetitive peak reverse voltage 150 250 500 750 Va(oc) | DC reverse voltage 80 160 320 480 Symbol Parameter Condition Limit Unit \FRMS) | R.M.S. forward current 4.70 A Single-phase, half-wave Without fin 2.0 lECa Average forward current _. A () resistive load =Ta=40C | with two fins of Fe plate 30 x 1t 3.0 'FSmM Surge (non-repetitive) forward current .| half cycle, 60Hz peak value 200 A . Value corresponding to T cycle of half-wave, 2 rt ("t_ for fusing 60 Hz Surge forward current 170 . Aes Tj Operating junction temperature 40~ +150 c Tstg Storage temperature 40~ +150 c f Operating frequency 1000 Hz - Weight Typical value 1.5 9 ELECTRICAL CHARACTERISTICS SR3AM Symbol Parameter Test condition Unit. Min. Typ. Max. IRAM Peak reverse current Tj =25/150T, Varo applied - - 0.1/1.0 mA VFM Forsard voltage drop Ta=257T, le m=10A, instantaneous value _ _ 1.1 Vv Rth(ja)} Thermal resistance Junction to ambient - - 55 c/WInstantaneous forward current (A) Transient thermal impedance (C/W) Ambient temperature (C) 10"! 2 107 Maximum forward characteristics 0.7 08 O09 10 11 #42 #43 14 ~=215 Maximum transient thermal impedance Instantaneous forward voltage drop (V) characteristics (Junction to ambient) 1 N Weao~l 10! 7 199 2 1 03 10-3 2 345 710-2 2 345 710-7 2 345 7190 160 140 120 100 80 60 40 20 Time (s) Allowable ambient temperature vs. DC output current (Single-phase, half-wave operation) Resistive, inductive loads Natural 1 Two fins of i plate - i A fin of iron plate 30x30xt Without fin 05 10 15 20 25 30 3.5 4.0 DC output current (A) MITSUBISHI SILICON RECTIFIER DIODES Surge (non-repetitive) forward current (A) Average power dissipation (W) Ambient temperature (C) SR3AM LOW POWER GENERAL USE LEAD-MOUNTED TYPE Rated surge forward current 200 175 150 125 100 1 2 345 710 20 304050 70 100 Cycles at 60Hz Maximum average power dissipation characteristics 4.0 3.5 , half-wave, full-wave operation | 3.0 ree-phase half-wave, full-wave 2.5 operation 2.0 1.5 1.0 Resistive, 0.5 - inductive loads 15 20 2.5 3.0 35 40 Q 0 O05 10 Average forward current (A) Allowable ambient temperature vs. DC output current (Single-phase, half-wave operation) 160 Capacitive battery, loads 140 Natural convection 120 100 Two fins of iron 30x30xt1 . of iron plate 60 30x30xt1 40 20 Without 0 O05 10 15 20 25 3.0 3.5 40 DC output current (A) 45MITSUBISHI SILICON RECTIFIER DIODES SR3AM LOW POWER GENERAL USE LEAD-MOUNTED TYPE Allowable ambient temperature vs. Allowable ambient temperature vs. DC output current _ DC output current (Single-phase, full-wave operation) (Single-phase, full-wave operation) - 1 inductive 1 battery loads. loads 3 Natural | 2 Natural 120 convection 2 1 g 2 Two fins 8 1 wo of iron g of iron g 30x30xt1 E A fin of | 5 A fin of iron plate . iron platet ~ 30x30xt1 e 30x30xt1 5 60 3 2 a E 4 < < Without 20 0 o 1 2 3 4 7 8 DC output current (A) DC output current (A) Mounting methods with fins Printed circuit With two fins , With afin board JO