DPG60C300HB
1 2 3
Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Common Cathode
HiPerFRED²
Part number
DPG60C300HB
Backside: cathode
FAV
rr
t ns35
RRM
30
300
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20200211cData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
DPG60C300HB
ns
3 A
T
VJ
= °C
reverse recovery time
A7
35
55
ns
I
RM
max. reverse recovery current
I
F
= A;30
25
T = 125 °C
VJ
-di
F
= A/µs200/dt
t
rr
V
R
= V200
T
VJ
= °C25
T = 125 °C
VJ
V = V
Symbol
Definition
Ratings
typ.
max.
I
R
V
IA
V
F
1.34
R0.95 K/W
R
min.
30
V
RSM
V
1T = 25°C
VJ
T = °C
VJ
mA0.1V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
140
P
tot
160 WT = 25°C
C
RK/W
30
300
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Unit
1.63
T = 25°C
VJ
150
V
F0
V
0.70T = °C
VJ
175
r
F
10.5
mΩ
V
1.06T = °C
VJ
I = A
F
V
30
1.39
I = A
F
60
I = A
F
60
threshold voltage
slope resistance for power loss calculation only
µA
150
V
RRM
V
300
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
42
junction capacitance
V = V150 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current
V = 0 V
R
T = °C
VJ
175
360 A
300
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
300
0.3
IXYS reserves the right to change limits, conditions and dimensions. 20200211cData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
DPG60C300HB
Ratings
Pr
odu
c
t
M
a
rk
in
g
Date Code
Part Number
Logo
IXYS
1234
Lot#
yywwZ
Location
XXXXXXXXX
D
P
G
60
C
300
HB
Part description
Diode
HiPerFRED
extreme fast
Common Cathode
TO-247AD (3)
=
=
=
DPG60C300HJ ISOPLUS247 (3) 300
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm1.2
mounting torque
0.8
T
VJ
°C175
virtual junction temperature
-55
Weight g6
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
F
C
N120
mounting force with clip
20
I
RMS
RMS current
50 A
per terminal
150-55
DPG60C300PC
DPF60C300HB
TO-263AB (D2Pak) (2)
TO-247AD (3)
300
300
DPG80C300HB TO-247AD (3) 300
TO-247
Similar Part Package Voltage class
DPG60C300QB TO-3P (3) 300
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
1)
DPG60C300HB 502163Tube 30DPG60C300HBStandard
T
stg
°C150
storage temperature
-55
threshold voltage
V0.7
mΩ
V
0 max
R
0 max
slope resistance *
7.9
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Fast
Diode
°C
* on die level
175
IXYS reserves the right to change limits, conditions and dimensions. 20200211cData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
DPG60C300HB
S
ØPØ P1 D2
D1
E1
4
1 2 3
L
L1
2x b2
3x b
b4
2x e
2x E2
D
E
Q
A
A2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
1 2 3
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions. 20200211cData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
DPG60C300HB
Z
thJC
[K/W]
0.0 0.4 0.8 1.2 1.6 2.0
20
40
60
80
0 200 400 600
20
30
40
50
60
70
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
1.0
0 40 80 120 160
0.2
0.4
0.6
0.8
1.0
1.2
1.4
K
f
TVJ [°C] -diF/dt [A/μs]
t [ms]
0 200 400 600
0
100
200
300
400
500
600
0
2
4
6
8
10
12
0 200 400 600
2
4
6
8
10
12
14
16
0 200 400 600
0.1
0.2
0.3
0.4
Q
rr
[μC]
V
F
id-]V[
F
/dt [A/μs]
IF = 60 A
30 A
15 A
IRM
Qrr
VFR
tfr
TVJ = 150°C
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
rr
versus -di
F
/dt
Fig. 3 Typ. reverse recov. current
I
RM
versus -di
F
/dt
Fig. 4 Dynamic parameters
Q
rr
, I
RM
versus T
VJ
Fig. 5 Typ. reverse recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. forward recovery voltage
V
FR
& time t
fr
versus di
F
/dt
Fig. 8 Transient thermal impedance junction to case
25°C
I
F
[
A]
-di
F
/dt [A/μs]
I
RM
[A]
trr
[ns]
-di
F
/dt [A/μs]
t
fr
[ns]
V
FR
[V]
0 200 400 600
2
4
6
8
10
12
14
16
E
rec
[μJ]
-diF/dt [A/μs]
Fig. 7 Typ. recovery energy
E
r
e
c
versus -di
F
/dt
IF= 15 A
30 A
60 A
TVJ = 125°C
VR= 200 V
TVJ = 125°C
VR = 200 V
TVJ = 125°C
VR= 200 V
TVJ = 125°C
VR= 200 V
IF = 30 A
TVJ = 125°C
VR= 200 V
IF = 60 A
30 A
15 A
IF = 60 A
30 A
15 A
Rthi [K/W]
0.1311
0.1377
0.3468
0.2394
0.095
ti[s]
0.0018
0.002
0.012
0.07
0.345
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20200211cData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
