7 S \o SO O Pro Electron Series oe . Discrete POWER & Signal eo Na f 10tTla 1 . Technologies Semiconductor . JFET Pro Electron Series BV I . NF . BV. . Vp Vos lnss RY, tes rss (cB) Device case goo najoy (V@ Veg ( A) (VY@ Veg wa) (mA) @ Vj, | {mmho) @ Fa. (PF)@ Vogl (PF)@ Va, Veg Roa tk Pro. Pkg. oo ' : 8 0G] Mi n i A) Min Max Min Max (MHz req.) . ts Min (wA)|Max (v)iMin Max (V) Min Max (V) ) (MZ) Max (V)] Max (VY) (Y) | a aii) BF244A} TO-9$2 | 30 1 5 20 };05 8 15 10/104 22 15 200] 2 65 15 3 65 O6.001| 4 20 | 7.1 20 +t | 1.5 100; 50 | 94 BF244B) TO-92 | 30 1 5 20 | 0.5 8 15 10/16 38 15 200] 6 15 15 3 6.5 0.001| 4 20 4.1 20-=C- 1 1.5 100} 50 | 94 BF244C| TO-9$2 | 30 j 5 20 }05 8 19 10/32 75 15 200/12 25 15 3. 65 0.001] 4 20 ; 1.1 20 -1: 71.5 100} 50 | 94 BF245A| TO-92 | 30 1 5 20 | 0.5 8 15 10/04 22 15 200]| 2 65 15 3 6.5 0.001] 4 20 1.1 20, -1 50 | 97 oe Mt pF245B|To-92130 1/15 20/05 8 15 10/16 38 15 200}6 15 15] 3 65 0.001/ 4 20/11 20 -1 50 | 97 yo BF245C | TO-92 | 30 1 5 20 | 0.5 8 15 10/32 75 158 200;12 25 i5 3 6:5 0.001] 4 20 4.1 20 =C-i 50 | 97 we NS BF256A| TO-92 | 30 1 5 20 05 75 15 200] 3 7 15145 0.001 0.7 20 -1 7.5 800] 50 | 97 BF256B | TO-92 | 30 4 5 20 05 7.5 15 200] 6 13 15 | 45 9.001 0.7 20 -i 7.5 800; 50 | 97 . nN 7 & BF256C| TO-92 |} 30 1 5 20 05 75 15 200] 11 18 15} 45 0.001 0.7 20 -1 75 800! 50 | 97 BSR56 |TO-236| 401 4 2014 10 15 1 50 15 5 10 O 51 | 49 | BSR57 |TO-236/ 401 41 2012 6 1 1 20 4100 15 5 10 O 51 | 49 BSR58 |TO-236| 40 1 4 20/08 4 15 1 8 80 i5 5 10 0O 51 | 49 Alu | rw EO : Al | " e{O fomPackage Outlines DO-41 (D4) 0.034 (0,86) Diameter ; 0,028 (0.712) al WRAL 30 mee GAD STEEL JL STUDS: DUMET (ALLOY 42) A 4 ( [Bee R O140 (2.55) [Eas] 0.160 (4.06) at CATHODE BAND vy <q J Y A 3109 _MaN 6030 (7.270) . v mre SEE NOTE 188.0 a | oe NOTE 1: Lead diameter is not controled in this zone, allowing for flash, jead finish buik-up and minor irregularities other than slugs. LL-34 (D3) TERMINALS: OUME {ALLOY 47} J EXPANSION GAP } 2.304 {2.64 REFERENCE 9.028 (0.50) 0.044 (0.35) TO-92 (92, 94, 96, 97*, 98*) [4.318-2.699) ff vt) ~ 0.700.185 [4.318-4.699] RO.030 [0.76] wom ow _ 0.050-0.065 [1.270~1,551] 0.014-06.030 [0.355-0.762) 0.010 {0.254} ROM 0.026 [0.506] Nou 0.570-0.615 [14.478~15.625] 0.045-0.055 [1.145-1.397] k- 4+ tC 0.014-0.020 [0.355-0.508] Te P| yy 0.165-0.180 [4.191~4.872} LL TE wow 92 84 96 PIN BiF|/BIFI BIF 1 [EID EID] BIS 2 ;BIS;[CIG|]E ID 3 |CIG/]BIS|CIG + 0.012-0.019 [0.304-0,483) 97* 38* O1S0-G.175 [3.81-4,445) PIN Hone | re | BUF] BI F t *Leadformed to TO-18 configuration prior to bulk 2.040-0.060 [1,016-1.524] 1 2 3 1 | C)G) CJ] GI shipment. For inne leads, order option 342. UU U 2 | B/Sj {S| DrainSource interchangeable on mast JFET devices. G.084-0.09% [2.523-7.413) 3 | E/D}] ByD 92 so