SEMICONDUCTORS INC OFE D BM os1su.50 go000e79 4 i RF-IF High Frequency Transistors T- 31 t7 - Cob TYPE CASE MAXIMUM RATINGS Hee VceE(SAT) ft Cre* NF. NO. 2 Pa le VcEO tc Voce max ic min max max a (mi) (mA) {v) min max | (mA) (v) (v) (mA) | (MHz) (pF) (dB) BF 115 N | TO-725 165 30 30 48 167 1 10 - - 230+ 08+ 3.5+ BF 152 N | TO-106 200 - 12 20 - 3 10 0.5 10 600 1.2 - BF 153 N | TO-106 200 - 12 20 - 3 6 0.5 10 300 1.2 - BF 155 N | TO-72G 200 20 40 20 - 2.6 12 03 10 400 O.4+ 9 BF 158 N | TO-106 200 50 12 20 - 4 10 0.5 jo 700+ 12 3.6 BF 159 N | TO-106 200 50 20 20 - 4 10 0.5 10 700+ 1.2 3.5 BF 160 N | TO-106 200 60 12 20 - 3 10 0.5 10 400 1.2 3.5 BF 173 N | TO-72J 260 25 25 38 - 7 10 - - 350 0.3 - BF 181 N | T0-72G 150 20 20 20 - 2 10 - - 600+ 0.9+ - BF 182 N_ | TO-72G 150 20 20 10 - 2 10 - - 600+ 1 74+ BF 183 N | TO-72G 150 20 20 10 - 3 10 - - 800+ 1+ - BF 184 N | T0-72J 165 30 20 67 220 1 10 - - 260+ 0.9 4 BF 185 N | TO-725 165 30 20 36-125 1 10 - - 200+ 0.9 4 BF 198 N | TO-92F 360_ 26 30 27 - 4 10 - - 400+ 0.22+ 3+ BF 199 N | TO-92E 360 25 25 38 - 7 10 - - 550+ 0.32++ - BF 200 N | TO-72G 150 20 20 15 - 2 10 - ~ 500+ 0.5 5 BF 224 N | TO-92E 360 50 30 30 - 7 10 0.15 10 300 0.3+ 4 BF 240 N | TO-92E 300 25 40 67 220 1 10 _ - 430+ 0.34 = 3.5 BF 241 N | TO-92E 300 25 40 36 126 1 10 - - 400+ 0.34 + 3.5 BF 253 N | TO-92E 300 30 30 40 360% 1 10 - - 150 O.7+* 1.5 BF 254 N | TO-92E 300 30 20 67 220 1 10 0.14 10 260+ 0.85++ 4 BF 255 N | TO-92E 300 30 20 36 125 1 10 0.1+ 10 200+ 0.85++ 4 BF 271 N | TO0-72J 250 25 25 30 - 10 10 0.13+ 10 500+ 0.22++ - BF 310 N | TO-92F 300 25 30 29 - 4 410 - - 300+ 16 - BF 311 N | TO-92E 300 25 25 40 - 15 10 - - 750+ 0.35 - BF 314 N | TO-92F 300 25 30 29 - 4 10 ~ _ 450+ 0.13 - BF 368 N | TO-92A 310 50 15 35 125 1 10 0.4 10 250 17 - BF 369 N | TO-92A 310 50 20 70 = 220 1 10 0.4 10 400 17 - BF 494 N j TO-92E 300 30 20 67 220 1 10 0.1+ 10 260+ 0.85+ 4+ BF 495 N | TO-92E 300 30 20 36 125 1 10 0.1+ 10 200+ 0.85+: 4+ BF 594 N | TO-92E 250 30 25 65 220 1 10 - - 260+ 0.6+ 14+ BF 595 N |} TO-92E 250 30 25 35 125 1 10 - - 260+ 0.6++ 1.44 BF 597 N | TO-92E 360 26 25 38 Oo 7 10 - - 550+ 0.3+ - BFS 62 N | TO-72G 200 265 25 35 - 7 10 - - 580 0.33 4 BFW 41 N | TO-72G 200 - 16 40 80 3 1 0.4 10 600 3 4 BFW 68 N | TO-18 360 - 40 40 - 10 1 0.15 10 250 4 6 BFW 70 N | TO-72G 240 - 30 30 - 10 10 ~ - 750 16+ 2.6+ BFX 60 N | TO-72G 230 26 25 50 ~ 7 10 - - 400 03 5+ BFX 73 N | T0-72G 200 50 16 20 - 3 1 0.4 10 600 1.7 6 BFY 74 N | TO-18 360 100 45 40 180 10 5 1 10 250 4 - BFY 75 N | TO-18 360 100 45 65 300 10 5 1 10 250 4 - BFY 78 N { TO-18 300 50 12 20 - 3 1 0.4 10 500 28 6 BFY 79 N | TO-72G 300 - 30 30 - 4 10 - - 400 16 5.5 BFY 88 N | TO-72J 175 25 26 40 - 5 1 - - 750 0.28 4 CS 9016 N | TO-92A 200 - 20 29 146# 1 5 3 10 300 1.6 4 CS $017 N | TO-92A 200 - 18 40 1987 1 2 10 _ 24 4+ cs 9018 N | TO-92A 200 - 12 29 1987 1 5 0.6 10 600 17 - Cx 917 N | TO-92A 250 50 30 40 150 5 10 0.4 20 200 2 - cx 918 N | TO-92A 250 50 20 40 160 7 10 04 20 400 1.5 - #HEE groupings available 30 + Typical vatueSEMICONDUCTORS INC Of D ff azaeeso ooooesno ff 7-3/-/9 RF-IF High Frequency Transistors z Cob TYPE e CASE MAXIMUM RATINGS HFE VCE(SAT) ft Cre= NF. NO. a Pg te VcEO le Voce max ic min max max 2 (mW) | (mA) | (Vj | min max | (mad | CV) | o(V) | (mad | (MHz) | (pF) | (dB) K 917 N | TO-92A 250 50 20 29 146# 1 5 0.6 10 150 2.5 - K 918 N | TO-92A 250 50 12 29 146# 1 5 06 10 250 17 - K 928 N | T0924 250 50 20 40 1207 1 5 0.14+ 10 550 1.3 2+ MPS 3563 | N | TO-92A 350 50 12 20 200 8 10 - - 600 1.7 6 MPS 3693 | N | TO-92A 350 50 45 40 160 10 10 - - 200 3.5 4+ MPS 3694 | N | TO-92A 350 50 45 100 400 10 10 - - 200 3.5 4+ MPS 3826 | N | TO-92A 350 100 45 40 160 10 10 - - 200 3.5 - MPS 3827 |} N | TO-92A 350 100 45 100 400 10 10 - - 200 3.5 - MPS 6507 | N | TO-92A 350 100 20 250 = 2 10 - - 700 2.5 - MPS 6511) N | TO-92A 350 100 20 260 = 10 10 - - - 2.5 - MPS 9425 | N | TO-92A 350 50 18 25 160# 1 5 0.3+ 10 300 1.8 = MPS 9623 | N | TO-92A 310 100 18 25 300% 1 5 0.5 10 100 3.5 - MPS 9624 | N |} TO-92A 310 100 30 25 300# 1 5 0.6 10 100 3.5 - MPS 9625 | N } TO-92A 310 50 12 25 300# 1 5 0.3+ 10 250 1.8 - PN 3563 N | TO-92A 250 50 12 20 200 8 10 - - 600 17 4+ PN 5130 N | TO-92A 250 50 12 15 260 8 10 0.6 10 450 17 4+ PN 5132 N | TO0-92A 250 50 20 30 6400 10 10 0.2 10 200 3.5 - 2N 915 N | TO-18 360 - 50 50 200 10 5 i 10 250 3.5 - 2N 916 N | TO-18 360 - 25 50 200 10 1 0.5 10 300 6 - 2N 917 N | TO-72G 200 50 15 20 200 3 1 0.5 3 500 1.7 6 2N 918 N | TO-72G 200 50 16 20 3 1 0.4 10 600 1.7 6 2N 2615 N | T0-18 300 - 15 20 - 3 1 - - 500 2.8 - 2N 2616 N | TO-18 300 50 15 20 - 3 1 0.4 10 600 2.8 6 2N 2865 N | TO-72G 200 50 13 20 200 4 10 0.4 10 600 2.5 4.5 2N 3478 N | TO-72G 200 - 15 25 150 2 8 - - 750 1 4.5 2N 3563 N | TO-106 200 50 12 20 200 8 10 - - 600 7 4 2N 3564 N | TO-106 200 100 15 20 600 18 10 0.3 20 400 3.5 4 2N 3600 N | TO-72G 200 - 15 20 150 3 1 0.4 10 850 - 4.5 2N 3662 N | TO-92B 200 26 12 20, = 8 10 0.6 10 700 1.5 4 2N 3663 N | TO-92B 200 25 12 20 8 10 0.6 10 700 1.5 4 2N 3693 N | TO-106 200 30 45 40 160 10 10 0.4 10 200 3.6 4 2N 3694 N | TO-106 200 30 45 100 400 10 10 0.25 10 200 3.5 4 2N 3825 N | TO-92B 250 100 16 20 - 2 10 0.25 2 200 3.5 4 2N 3826 N | TO-92B 360 30 45 40 160 10 10 - - 200 3.5 4 2N 3827 N | TO-928 360 30 45 100 400 10 10 - - 200 3.5 4 2N 3854 N | TO-92B 200 100 18 35 70 2 45 0.2 10 100 3.5 ~ 2N 3854A | N | TO-92B 200 100 30 35 =70 2 4.5 0.2 10 100 3.5 - 2N 3855 N | TO-92B 200 100 18 60 120 2 4.6 0.2 10 130 3.5 > 2N 3855A| N | TO-92B 200 100 30 60 120 2 4.5 0.2 10 130 3.5 - 2N 3856 N | TO-92B 200 100 18 100 200 2 45 0.2 10 140 3.5 - 2N 3856A] N | TO-92B 200 100 30 100 200 2 46 0.2 10 140 3.5 - 2N 3932 N { TO-72G 200 - 20 40 160 2 8 - ~- 750 0.55 + 45 2N 3933 N | TO-72G 200 - 30 60 200 2 8 - - 750 0.55 4 2N 4259 N | TO-72G 175 - 30 60 250 2 8 - - 750 0.55 + 5 2N 4292 N | TO-92B 200 50 15 20 3 1 06 10 600 3.5 6 2N 4293 N | TO-92B 200 50 15 200 + 3 1 0.6 10 600 3.5 6 2N 4934 N | TO-72J 200 - 30 40 170 2 8 - - 700 - 3.5 2N 4935 N | TO-72J 200 - 40 60 200 2 8 ~ - 700 - 3.6 2N 4936 N | TO-72J 200 - 40 60 250 2 8 - - 700 - 45 2N 4994 N | TO-92F 360 30 45 40 160 10 10 - - 200 3.5 - 2N 4995 N | TO-92F 360 30 45 100 400 10 10 - - 200 3.5 - 2N 5127 N | TO-106 200 100 12 15 300 2 10 0.3 10 150 3.5 - + Typicat value #UHEE groupings availableSEMICONDUCTORS INC OE D BM os1aue50 0000281 2 i 7T-3/-/9 RF-IF High Frequency Transistors ai z Cob TYPE = CASE MAXIMUM RATINGS Hee VCEI(SAT) fr Cres INF. NO. a Py Ic VcEO Ic VcE max lc min max max 2 (mw) | (mal (v) min max | (mA) | (V) wv) (mA) | (MHz) (pF) | (dB) 2N 5130 j N_ | TO-106 200 50 12 15 250 8 10 06 10 450 2 4 2N 5131 N | TO-106 200 200 15 30 6500 10 10 1 10 100 6 - 2N 5132 N | TO-106 200 50 20 30 400 10 10 0.2 10 200 3.5 - 2N 5179 N | TO-72G 200 50 12 25 250 3 1 0.4 10 600+ 1 45 2N 5180 N | T0-72G 180 - 15 20 200 2 8 0.3 10 650 1 0 2N 5181 N | T0-72G 180 50 454 27 - 1 6 - - 400 - - 2N 5182 N | TO-72G 180 - 354 27 - 1 6 - - 400 - - 2N 5770 N | TO-92A 625 50 15 20 - 3 1 0.4 10 600+ 17 6 28C 477 N | TO-72G 140 30 32 40 170 i 10 - - 150 ~ - 2SC 568 N | TO-72G 200 20 15 40 150 2 6 - -_ 700 1 3 2SC 817 N | TO-72G 120 20 15 35 300# 1 1 - - 550 0.7+ - 2SC 829 N | 70-928 250 30 20 40 250# i 10 o.1 10 150 16 28C 838 N | TO-92B 250 50 25 30 06 180# 0.5 3 0.3 10 150 2.5 2SC 839 N | TO-92B8 250 50 25 30 180# 0.5 3 0.3 10 150 2.5 4 2SC 922 N | T0-928 250 20 20 40 180 1 6 - - 400 1.2 5 28C 929 N | T0-928 120 30 10 40 320# 1 6 - - 170 1.6 - 28C 930 N | TO-92B 120 30 10 25 320# 1 6 - _ 170 16 - 2SC 947 N | TO-72G 150 15 20 354 1 10 0.6+ 10 400 - - 2SC 948 N | TO-72G 150 15 20 35+ 1 10 0.6+ 10 700 ~ - 2sc 1047 | N | T0928 150 15 20 40 160 1 6 - - 450 ie 5 28C 1293 | N | TO-92B 300 50 26 15 120 1 6 - - 200 18 _ 2S8C 1359 | N | TO-92B 250 30 20 50 220 1 10 0.1+ 10 150 1.5 4 2sc 1687 | N | TO-92E 400 30 25 38 - 7 10 0.8 10 360 0.5 - 2sc 1688 | N |TO-92E 400 30 40 38 - 7 10 0.8 10 360 0.5- - 28C 1778 | N | TO-92E 150 15 20 20 - 3 10 - - 600 0.6 + - 28C 1789 | N | TO-92B 200 50 18 20 - 2 10 - - 600 1.5 - 2sc 1923 | N | TO-92B 100 20 30 25 140# 1 6 - - 500+ 0.7+ 4 ABVceO + Typical vatue #HpE groupings available nw4349 af T~G/ -o2 O SEMICONDUCTORS INC OTE D i 8136650 0000323 Packaging Information SCR TRIAC 1. CATHODE 1. CATHODE 1. MT 1 2. GATE 2. GATE 2. GATE 3. ANODE 3. ANODE 3. MT 2 ~ go. ba 4 : we SEATIN 210 PACKAGING bare /ti ae ii sear .500 MIN INFORMATION UOEt-stcans Tt _O00 016 * 136 138 ob be sewn ee TO-18 (PLASTIC) TO-92 SCR TRIAC 1. CATHODE 1. CATHODE 1. MT 1 2. GATE 2. GATE 2. GATE 3. ANODE 3. ANODE 3. MT 2 e370 300 aaa ass CATHODE = | see di a 240) oe PLANE B78 Nw 210 500 MIN. | im O19 M40 ie SEATING PLANE ej 70 +0 Go gS 5 TT]. tos 930 | SOO MIN. , , 27 Sas ax om. cia t! WAX x00 MAX."] S5e 3 = 422 ANOOE f % ~ 22 UNF - 2A TO-48D 74 c-04 ee weeps eg eee