Continental Device India Limited Data Sheet Page 1 of 3
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistors
Marking
BC859 = 4D
BC859A = 4A
BC859B = 4B
BC859C = 4C
BC860 = 4H
BC860A = 4E
BC860B = 4F
BC860C = 4G
ABSOLUTE MAXIMUM RATINGS BC859 BC860
Collector–emitter voltage (+VBE = 1 V) –VCEX max. 30 50 V
Collector–emitter voltage (open base) –VCE0 max. 30 45 V
Collector current (peak value) –ICM max. 200 200 mA
Total power dissipation up to Tamb = 60 °C Ptot max. 250 250 mW
Junction temperature Tjmax. 150 150 ° C
Small–signal current gain > 125 125
–IC = 2 mA; –VCE = 5 V; f = 1 kHz hfe < 900 900
Transition frequency
–IC: 10 mA; –VCE = 5 V; f = 100 MHz fT> 100 100
MHz
Noise figure at Rs = 2 kΩ
–IC = 200 µ A; –VCE = 5 V
f = 30 Hz to 15 kHz F typ. 1,2 1 dB
<43dB
f = 1 KHz; B = 200 Hz F < 4 4 dB
BC859
BC860
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
3
2
1
SOT-23 Formed SMD Package
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
Continental Device India Limited Data Sheet Page 2 of 3
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values BC859 BC860
Collector–base voltage (open emitter) –VCB0 max. 30 50 V
Collector–emitter voltage (+VBE = 1 V) –VCEX max. 30 50 V
Collector–emitter voltage (open base) –VCE0 max. 30 45 V
Emitter–base voltage (open collector) –VEB0 max. 5 5 V
Collector current (d.c.) –ICmax. 100 mA
Collector current (peak value) –ICM max. 200 mA
Emitter current (peak value) IEM max. 200 mA
Base current (peak value) –IBM max. 200 mA
Total power dissipation up to Tamb = 60 °C** Ptot max. 250 mW
Storage temperature Tstg –55 to +150 ° C
Junction temperature Tjmax. 150 ° C
THERMAL CHARACTERISTICS
Tj = Px (Rth j–t + Rth t–s + Rth s–a) + Tamb
Thermal resistance
From junction to tab Rth j–t =60
K/W
From tab to soldering points Rth t–s = 280
K/W
From soldering points to ambient** Rth s–a 90
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; –VCB = 30V; Tj = 25°C –ICBO typ. 1 nA
<15nA
Tj = 150 °C –ICBO <4mA
Base–emitter voltage
–IC = 2 mA; –VCE = 5 V –VBE
typ. 650 mV
600 to 750 mV
–IC = 10 mA; –VCE = 5 V —VBE < 820 mV
Saturation voltages
–IC = 10 mA; –IB = 0,5 mA –VCEsat typ. 75 mV
< 300 mV
–VBEsat typ. 700 mV
–IC = 100 mA; –IB = 5 mA –VCEsat typ. 250 mV
< 650 mV
–VBEsat typ. 850 mV
Collector capacitance at f = 1 MHz
IE = Ie = 0; –VCB = 10 V Cctyp. 4,5 pF
BC859
BC860
Continental Device India Limited Data Sheet Page 3 of 3
Transition frequency at f = 100 MHz
–IC = 10 mA; –VCE = 5 V fT> 100
MHz
Small–signal current gain at f = 1 kHz
–IC = 2 mA; –VCE = 5 V hfe 125 to 800
Noise figure at RS = 2 kW
BC859 BC860
–IC = 200 m A; –VCE = 5 V F typ. 1,2 1 dB
f = 30 Hz to 15 kHz < 4 3 dB
f = 1 kHz; B = 200 Hz F typ. 1 1 dB
<4 4dB
Equivalent noise voltage at RS = 2 kW
–IC = 200 m A; –VCE = 5 V
f = 10Hz to 50Hz; Tamb = 25°C Vn
< – 0,11 mV
D.C. current gain
–IC = 2mA; –VCE = 5V; total range hFE 125 to 800
A selections hFE 125 to 250
B selections hFE 220 to 475
C selections hFE 420 to 800
BC859
BC860
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
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information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
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Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
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