b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)123 X1004 2N1019 28843 AC154/AC 157 FP4340/2N4340 2AD140 2AT128 2BC138 2BC221 2N214MP 2N3515 2N3519 2N3524 2N3943 2N4043 * 2N5505* * 2N5508* * 2N5511* * 2N5514* * 20C6 20C84 288145 2SFT212 273043 2X2N3055t 4JD12X043 124104 12A108 12A904 12G101 12H301 12H901 12J302 125902 12X165 A520 D.A.T.A. IN ORDER OF (1) CATEGORY & (2) TYPE No. DESCRIPTION m m m . 4 leaded TOS or TO46; BVDSS-50V; IDSS-100nA max; gfs-1000u mhos Pc-10W max:;BVCBO-30V; Ic-3.0A max:hFE-15000 Typ/VCE-5.0V:Ic-1.0A. ax. A ; Max. Temp fab-1.0Mc; BVCBO-25V; IC-.O5A max; hFE-70 at IC--O5A Matched pair of AC154 and AC157 max. match-30%;IDSS match-5%;BVGSS-50V_ max;Pc-.30W max. ax. ; } Matched Pair of AD140; hFE1/hFE2-1.25 to 1.0 Matched Pair of AT128; hFE/hFE2-.83 max. ; 75 max. Matched Pair of BC138;hFE 1/2 1.0min-1.25max at iC of 1.0A. Matched Pair of 8C221;hFE 1/2 1.Omin-1.25max at IC of 200mA. -. at : Max. Coll. Diss. 18O0mW;FaB.80mC;Max.Temp.85J;Matched pair 214 -1. OV max. Pt-1.4W both EO-40V BO-5.0V max. 7. max; max. PT-1.4W both sides;VCBO-6GOV max:VCEO-30V max;VEBO-7.0V max. 1, max; max. Pt-1.4W both sides;VCBO-70V max:VCEO-55V max:VEBO-7.0V max. B 1C-50mA;Pt-.7 5W;VBE( 1-2)-3.OmV:hFE 1/2-.90min. - . : - n. BVCBO-45V,IC-10mA;Pt-.50W;VBE(1- .OmV;hFE 1/2-.80min. Pt. 3W,1G(1- : . mv; Su mV; PL.swWw ; : 15mV; mv; Pt. 3W, ; 15mvV; mV; Pt-..2W, ; . 25mV; .95 m * Matched Pair of OC20; hFE1/h -1.2 to 1.0 Matched of OC84;hFE1/2-.83 min. : max; BVCBO-30V; Ic-1.0A max; fae-7.0Mc; hFE-37/te-1.0A -. a BVCBO-30V;Pc-30W at Tc:hFE-40 at FC-2.0A;fab-200kc mv; Max. Thermal Res. 3.0 oC/mW; Matched Pair 2T3033 Pt 117W:hFE1/2 1.6 at VCE 4.0V;IC 400mAft 1.0MHz. > Two 2N2193 T =, - - 1 5mVmax. Pt-250m BO-2.0nA maxhFE-25min;VBE1/2-5.0mV max:ft-6OMc min. n; : PT-.75W both sides;VCBO-50V min:hFE match-40%;VBE match-15mV. : ; mV. Pt-250m BO-2.0nA_max:hFE-25 ;7Vbe 1/Vbe2-5.OmVmax:fT-6O0Mcmin. 1. m PT-.75W both sides; VCBO-35V min. Pt-1.4W Both Sides:VCBO-30V min:ICBO-10nA. Pt-1.4W Both Sides;VCBO-30V min;ICBO-10nA. Pt-1.4W Both Sides:VCBO-40V:ICBO-. 40uA;hFE Match-.80/1.0 Pt-1.4W Both Sides:VCBO-40V-ICBO-.40UA:hFE Match-.80/1.0 at max at PA-300mW; VCEO-55V; hFE-100 min; hFE1/hFE2-.80 to 1.0. VCBO-80V;Ic-50mA max;Pt-1200m iVBE1-VBE2-3mV:hFE-40 min. SYMBOLS AND CODES EXPLAINED IN INTERPRETER 123