BSM35GD120DN2E3224 - Eupec Power Semiconductors

1Oct-20-1997

BSM 35 GD 120 DN2

IGBT Power Module

• Power module

• 3-phase full-bridge

• Including fast free-wheel diodes

• Package with insulated metal base plate

Type VCE ICPackage Ordering Code

BSM 35 GD 120 DN2 1200V50AECONOPACK 2 C67076-A2506-A67

BSM35GD120DN2E3224 1200V50AECONOPACK 2K C67070-A2506-A67

Maximum Ratings

Parameter Symbol Values Unit

Collector-emitter voltage VCE 1200 V

Collector-gate voltage

RGE = 20 kΩVCGR 1200

Gate-emitter voltage VGE ± 20

DC collector current

TC = 25 °C

TC = 80 °C

IC

35

50 A

Pulsed collector current, tp = 1 ms

TC = 25 °C

TC = 80 °C

ICpuls

70

100

Power dissipation per IGBT

TC = 25 °C Ptot 280 W

Chip temperature Tj+ 150 °C

Storage temperature Tstg -40 ... + 125

Thermal resistance, chip case RthJC ≤ 0.44 K/W

Diode thermal resistance, chip case RthJCD≤ 0.8

Insulation test voltage, t = 1min. Vis 2500 Vac

Creepage distance - 16 mm

Clearance - 11

DIN humidity category, DIN 40 040 -F sec

IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56

2Oct-20-1997

BSM 35 GD 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Gate threshold voltage

VGE = VCE, IC = 1.2 mA VGE(th) 4.5 5.5 6.5 V

Collector-emitter saturation voltage

VGE = 15 V, IC = 35 A, Tj = 25 °C

VGE = 15 V, IC = 35 A, Tj = 125 °C

VCE(sat)

-

- 3.3

2.7 3.9

3.2

Zero gate voltage collector current

VCE = 1200 V, VGE = 0 V, Tj = 25 °C

VCE = 1200 V, VGE = 0 V, Tj = 125 °C

ICES

-

- 2.4

0.6 -

1 mA

Gate-emitter leakage current

VGE = 20 V, VCE = 0 V IGES - - 150 nA

AC Characteristics

Transconductance

VCE = 20 V, IC = 35 A gfs 11 --S

Input capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz Ciss - 2 -nF

Output capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz Coss - 0.3 -

Reverse transfer capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz Crss - 0.14 -

3Oct-20-1997

BSM 35 GD 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time

VCC = 600 V, VGE = 15 V, IC = 35 A

RGon = 39 Ω

td(on)

- 60 120

ns

Rise time

VCC = 600 V, VGE = 15 V, IC = 35 A

RGon = 39 Ω

tr

- 60 120

Turn-off delay time

VCC = 600 V, VGE = -15 V, IC = 35 A

RGoff = 39 Ω

td(off)

- 400 600

Fall time

VCC = 600 V, VGE = -15 V, IC = 35 A

RGoff = 39 Ω

tf

- 50 75

Free-Wheel Diode

Diode forward voltage

IF = 35 A, VGE = 0 V, Tj = 25 °C

IF = 35 A, VGE = 0 V, Tj = 125 °C

VF

-

- 1.9

2.3 -

2.9 V

Reverse recovery time

IF = 35 A, VR = -600 V, VGE = 0 V

diF/dt = -800 A/µs, Tj = 125 °C

trr

- 0.25 -

µs

Reverse recovery charge

IF = 35 A, VR = -600 V, VGE = 0 V

diF/dt = -800 A/µs

Tj = 25 °C

Tj = 125 °C

Qrr

-

- 5

2 -

-

µC

4Oct-20-1997

BSM 35 GD 120 DN2

Power dissipation

Ptot = ƒ(TC)

parameter: Tj ≤ 150 °C

0 20 40 60 80 100 120 °C 160

TC

0

20

40

60

80

100

120

140

160

180

200

220

240

260

W

300

Ptot

Safe operating area

IC = ƒ(VCE)

parameter: D = 0, TC = 25°C , Tj ≤ 150 °C

-1

10

0

10

1

10

2

10

3

10

A

IC

10 0 10 1 10 2 10 3 V

VCE

DC

10 ms

1 ms

100 µs

tp = 18.0µs

Collector current

IC = ƒ(TC)

parameter: VGE ≥ 15 V , Tj ≤ 150 °C

0 20 40 60 80 100 120 °C 160

TC

0

5

10

15

20

25

30

35

40

45

A

55

IC

Transient thermal impedance IGBT

Zth JC = ƒ(tp)

parameter: D = tp / T

-4

10

-3

10

-2

10

-1

10

0

10

K/W

ZthJC

10 -5 10 -4 10 -3 10 -2 10 -1 10 0

s

tp

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

5Oct-20-1997

BSM 35 GD 120 DN2

Typ. output characteristics

IC = f (VCE)

parameter: tp = 80 µs, Tj = 25 °C

0 1 2 3 V5

VCE

0

5

10

15

20

25

30

35

40

45

50

55

60

A

70

IC

17V

15V

13V

11V

9V

7V

Typ. output characteristics

IC = f (VCE)

parameter: tp = 80 µs, Tj = 125 °C

0 1 2 3 V5

VCE

0

5

10

15

20

25

30

35

40

45

50

55

60

A

70

IC

17V

15V

13V

11V

9V

7V

Typ. transfer characteristics

IC = f (VGE)

parameter: tp = 80 µs, VCE = 20 V

0 2 4 6 8 10 V14

VGE

0

5

10

15

20

25

30

35

40

45

50

55

60

A

70

IC

6Oct-20-1997

BSM 35 GD 120 DN2

Typ. gate charge

VGE = (QGate)

parameter: IC puls = 35 A

0 40 80 120 160 nC 220

QGate

0

2

4

6

8

10

12

14

16

V

20

VGE

800 V600 V

Typ. capacitances

C = f (VCE)

parameter: VGE = 0 V, f = 1 MHz

0 5 10 15 20 25 30 V40

VCE

-2

10

-1

10

0

10

1

10

nF

C Ciss

Coss

Crss

Reverse biased safe operating area

ICpuls = f(VCE) , Tj = 150°C

parameter: VGE = 15 V

0 200 400 600 800 1000 1200 V1600

VCE

0.0

0.5

1.0

1.5

2.5

ICpuls/IC

Short circuit safe operating area

ICsc = f(VCE) , Tj = 150°C

parameter: VGE = ± 15 V, tSC 10 µs, L < 50 nH

0 200 400 600 800 1000 1200 V1600

VCE

0

2

4

6

8

12

ICsc/IC

7Oct-20-1997

BSM 35 GD 120 DN2

Typ. switching time

I = f (IC) , inductive load , Tj = 125°C

par.: VCE = 600 V, VGE = ± 15 V, RG = 39

0 10 20 30 40 50 60 A80

IC

1

10

2

10

3

10

ns

t

tdon

tr

tdoff

tf

Typ. switching time

t = f (RG) , inductive load , Tj = 125°C

par.: VCE = 600 V, VGE = ± 15 V, IC = 35 A

0 20 40 60 80 100 120 140 180

RG

1

10

2

10

3

10

ns

t

tdon

tr

tdoff

tf

Typ. switching losses

E = f (IC) , inductive load , Tj = 125°C

par.: VCE = 600 V, VGE = ± 15 V, RG = 39

0 10 20 30 40 50 60 A80

IC

0

2

4

6

8

10

12

14

16

mWs

20

E

Eon

Eoff

Typ. switching losses

E = f (RG) , inductive load , Tj = 125°C

par.: VCE = 600V, VGE = ± 15 V, IC = 35 A

0 20 40 60 80 100 120 140 180

RG

0

2

4

6

8

10

12

14

16

mWs

20

E

Eon

Eoff

8Oct-20-1997

BSM 35 GD 120 DN2

Forward characteristics of fast recovery

reverse diode IF = f(VF)

parameter: Tj

0.0 0.5 1.0 1.5 2.0 V3.0

VF

0

5

10

15

20

25

30

35

40

45

50

55

60

A

70

IF

Tj=25°C

=125°C

j

T

Transient thermal impedance Diode

Zth JC = (tp)

parameter: D = tp / T

-3

10

-2

10

-1

10

0

10

K/W

ZthJC

10 -5 10 -4 10 -3 10 -2 10 -1 10 0

s

tp

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

9Oct-20-1997

BSM 35 GD 120 DN2

Circuit Diagram

Package Outlines

Dimensions in mm

Weight: 180 g

Terms & Conditions of Usage

Attention

The present product data is exclusively subscribed to technically experienced

staff. This Data Sheet is describing the specification of the products for which a

warranty is granted exclusively pursuant the terms and conditions of the supply

agreement. There will be no guarantee of any kind for the product and its

specifications. Changes to the Data Sheet are reserved.

You and your technical departments will have to evaluate the suitability of the

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with respect to such application. Should you require product information in

excess of the data given in the Data Sheet, please contact your local Sales Office

via “www.eupec.com / sales & contact”.

Warning

Due to technical requirements the products may contain dangerous substances.

For information on the types in question please contact your local Sales Office via

“www.eupec.com / sales & contact”.