January 2008 Rev 2 1/12
12
STW9N150
N-channel 1500 V - 1.8 Ω - 8 A - TO-247
very high voltage PowerMESH™ Power MOSFET
Features
■100% avalanche tested
■Avalanche ruggedness
■Gate charge minimized
■Very low intrinsic capacitances
■High speed switching
■Very low on-resistance
Application
■Switching applications
Description
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of Power MOSFETs
with outstanding performances. The strengthened
layout coupled with the company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, unrivalled gate charge and
switching characteristics.
Figure 1. Internal schematic diagram
Type VDSS RDS(on) IDPw
STW9N150 1500 V < 2.5 Ω8 A 320 W
123
TO-247
Table 1. Device summary
Order code Marking Package Packaging
STW9N150 9N150 TO-247 Tube
www.st.com
Contents STW9N150
2/12
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STW9N150 Electrical ratings
3/12
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 1500 V
VGS Gate- source voltage ± 30 V
IDDrain current (continuous) at TC = 25 °C 8 A
IDDrain current (continuous) at TC = 100 °C 5 A
IDM (1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 32 A
PTOT Total dissipation at TC = 25 °C 320 W
Derating factor 2.56 W/°C
TJ
Tstg
Operating junction temperature
Storage temperature -55 to 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 0.39 °C/W
Rthj-amb Thermal resistance junction-ambient max 50 °C/W
TJMaximum lead temperature for soldering purpose 300 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Max value Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max) 8A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V) 720 mJ
Electrical characteristics STW9N150
4/12
2 Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage ID = 1 mA, VGS = 0 1500 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC=125 °C
10
500
µA
µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ± 30 V ± 100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
RDS(on
Static drain-source on
resistance VGS = 10 V, ID = 4 A 1.8 2.5 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward
transconductance VDS = 15 V, ID = 4 A 7.5 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
3255
294
22.4
pF
pF
pF
Coss eq.
Equivalent Output
capacitance VGS = 0, VDS = 0 to 1200 V 118 pF
RgGate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20 mV
open drain
2.4 Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 1200 V, ID = 8 A,
VGS = 10 V
(see Figure 15)
89.3
15.8
50.4
nC
nC
nC
STW9N150 Electrical characteristics
5/12
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 750 V, ID = 4 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14)
41
14.7
86
52
ns
ns
ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
8
32
A
A
VSD (2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 8 A, VGS = 0 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 16)
988
9.5
19.3
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 16)
884
8.2
18.6
ns
µC
A
Electrical characteristics STW9N150
6/12
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance
0123456
1.5
1.6
1.7
1.8
1.9
HV41520
RDS(on)
(Ω)
ID(A)
VGS =10V
STW9N150 Electrical characteristics
7/12
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Maximum avalanche energy vs
temperature
0 20406080100Qg (nC)
0
2
4
6
8
10
VGS
(V)
HV41500
VDD =1200V
ID =8A
VGS =10V
0 25 50 75 100 TJ (˚C)
0
100
200
300
400
500
600
700
EAS
(mJ)
HV41480
ID = 8A
125
Test circuits STW9N150
8/12
3 Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 17. Unclamped Inductive load test
circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
STW9N150 Package mechanical data
9/12
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
Package mechanical data STW9N150
10/12
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.85 5.15 0.19 0.20
A1 2.20 2.60 0.086 0.102
b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134
c 0.40 0.80 0.015 0.03
D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620
e5.45 0.214
L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728
øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216
S5.50 0.216
TO-247 MECHANICAL DATA
STW9N150 Revision history
11/12
5 Revision history
Table 9. Document revision history
Date Revision Changes
24-May-2007 1 First release
04-Jan-2007 2 Document status promoted from preliminary data to datasheet
STW9N150
12/12
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