STW9N150 N-channel 1500 V - 1.8 - 8 A - TO-247 very high voltage PowerMESHTM Power MOSFET Features Type VDSS RDS(on) ID Pw STW9N150 1500 V < 2.5 8A 320 W 100% avalanche tested Avalanche ruggedness Gate charge minimized Very low intrinsic capacitances High speed switching Very low on-resistance 2 3 1 TO-247 Application Switching applications Figure 1. Internal schematic diagram Description Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Table 1. Device summary Order code Marking Package Packaging STW9N150 9N150 TO-247 Tube January 2008 Rev 2 1/12 www.st.com 12 Contents STW9N150 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 5 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 STW9N150 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 1500 V VGS Gate- source voltage 30 V ID Drain current (continuous) at TC = 25 C 8 A ID Drain current (continuous) at TC = 100 C 5 A Drain current (pulsed) 32 A Total dissipation at TC = 25 C 320 W Derating factor 2.56 W/C -55 to 150 C Value Unit 0.39 C/W 50 C/W 300 C/W Max value Unit 8 A 720 mJ IDM (1) PTOT TJ Tstg Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max TJ Table 4. Symbol Maximum lead temperature for soldering purpose Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) EAS Single pulse avalanche energy (starting TJ = 25 C, ID = IAR, VDD = 50 V) 3/12 Electrical characteristics 2 STW9N150 Electrical characteristics (Tcase =25C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 250 A RDS(on Static drain-source on resistance Symbol Max. 1500 3 VGS = 10 V, ID = 4 A Unit V 10 500 A A 100 nA 4 5 V 1.8 2.5 Typ. Max. Unit Dynamic Parameter gfs (1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS = 15 V, ID = 4 A Min. 7.5 S VDS = 25 V, f = 1 MHz, VGS = 0 3255 294 22.4 pF pF pF Equivalent Output capacitance VGS = 0, VDS = 0 to 1200 V 118 pF Rg Gate input resistance f=1MHz Gate DC Bias=0 Test signal level=20 mV open drain 2.4 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 1200 V, ID = 8 A, VGS = 10 V (see Figure 15) 89.3 15.8 50.4 nC nC nC Coss eq. 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5% 4/12 Typ. VGS = 30 V VGS(th) Table 6. Min. STW9N150 Electrical characteristics Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Table 8. Symbol Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 750 V, ID = 4 A, RG = 4.7 , VGS = 10 V (see Figure 14) Min. Typ. Max Unit 41 14.7 86 52 ns ns ns ns Source drain diode Parameter Test conditions Min. Typ. Max Unit ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 8 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8 A, di/dt = 100 A/s VDD= 60 V (see Figure 16) 988 9.5 19.3 ns C A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8 A, di/dt = 100 A/s VDD= 60 V TJ = 150 C (see Figure 16) 884 8.2 18.6 ns C A trr Qrr IRRM trr Qrr IRRM 8 32 A A 1.6 V 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 s, duty cycle 1.5% 5/12 Electrical characteristics STW9N150 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance HV41520 RDS(on) () 1.9 VGS =10V 1.8 1.7 1.6 1.5 6/12 0 1 2 3 4 5 6 ID(A) STW9N150 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Capacitance variations HV41500 VGS (V) VDD =1200V ID =8A VGS =10V 10 8 6 4 2 0 0 20 40 60 80 100 Qg (nC) Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Maximum avalanche energy vs temperature HV41480 EAS (mJ) 700 ID = 8A 600 500 400 300 200 100 0 0 25 50 75 100 125 TJ (C) 7/12 Test circuits 3 STW9N150 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform 8/12 Figure 19. Switching time waveform STW9N150 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STW9N150 TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 0.620 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 oP 3.55 3.65 0.140 0.143 oR 4.50 5.50 0.177 0.216 S 10/12 TYP 5.50 0.216 STW9N150 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 24-May-2007 1 First release 04-Jan-2007 2 Document status promoted from preliminary data to datasheet 11/12 STW9N150 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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