TDA7266S
5+5W DUAL BRIDGE AMPLIFIER
WID E SU P PLY VO L T AG E R ANG E (3-1 8V)
MINIM U M EX T ERN AL C O MP O N ENTS
– NO SWR CAPACITOR
– NO BOOTSTRA P
– NO BOUCHERO T CELLS
– INTERNALLY FIXED GAIN
STAND-BY & MUTE FUNCTIONS
SHORT CIRCUIT PROTE CTION
THER MAL OVE R L OAD PROTECTION
DESCRIPTION
The TDA7266S is a dual bridge amplifier specially
designed for TV and Portable Radio applications.
July 2002
®
1
2
4
Vref
ST-BY 7
IN1
0.22µF
VCC
133
D94AU175B
+
-
-
+
OUT1+
OUT1-
15
14
12
MUTE 6
IN2
0.22µF
+
-
-
+
OUT2+
OUT2-
8
9
S-GND
PW-GND
470µF 100nF
BLOCK AND APPLICATION DIAGRAM
Multiwatt 15
ORDERING NUMBER: TDA7266S
TECHNOLOGY BI20II
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ELECTRICAL CHARACTERISTICS (VCC = 11V, RL = 8Ω, f = 1kHz, Tamb = 25°C unless otherwise
specified.)
Symbol Parameter Test Condition Min. Typ. Max. Unit
VCC Supply Range 3 11 18 V
IqTotal Quiescent Current 50 60 mA
VOS Output Offset Voltage 120 mV
POOutput Power THD = 10% 4.5 5 W
THD Total Harmonic Distortion PO = 1W 0.05 0.2 %
PO = 0.1W to 2W
f = 100Hz to 15kHz 1%
SVR Supply Voltage Rejection f = 100Hz VR = 0.5V 40 56 dB
CT Crosstalk 46 60 dB
AMUTE Mute Attenuation 60 80 dB
TWThermal Threshold 150 °C
GVClosed Loop Voltage Gain 25 26 27 dB
∆Gv Voltage Gain Matching 0.5 dB
RiInput Resistance 25 30 KΩ
VTMUTE Mute Threshold for VCC > 6.4V; VO = -30dB
for VCC < 6.4V; VO = -30dB 2.3
VCC/2
-1
2.9
VCC/2
-0.75
4.1
VCC/2
-0.5
V
V
1
2
3
4
5
6
7
9
10
11
8
N.C.
N.C.
S-GND
PW-GND
ST-BY
MUTE
N.C.
IN1
V
CC
OUT1-
OUT1+
13
14
15
12
OUT2+
OUT2-
VCC
IN2
D95AU261
PIN CONNECT ION (Top view)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VSSupply Voltage 20 V
IOOutput Peak Current (internally limited) 1.5 A
Ptot Total Power Dissipation (Tcase = 70°C) 25 W
Top Operating Temperature 0 to 70 °C
Tstg, TjStorage and Junction Temperature -40 to +150 °C
THERMAL DATA
Symbol Description Value Unit
Rth j-case Thermal Resistance Junction to case Typ. 1.6 Max. 2.2 °C/W
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1
2
4
Vref
ST-BY 7
IN1
C1 0.22µF
VCC
133
D95AU258A
+
-
-
+
OUT1+
OUT1-
15
14
12
MUTE 6
IN2
C3 0.22µF
+
-
-
+
OUT2+
OUT2-
8
9
S-GND
PW-GND
C5
470µFC6
100nF
R1 10K
C2
10µF
µP
R2 10K
C4
1µF
Figure 1: Microprocessor Application
ELECTRICAL CHARACTERISTICS (Continued)
Symbol Parameter Test Condition Min. Typ. Max. Unit
VTST-BY St-by Threshold 0.8 1.3 1.8 V
IST-BY ST-BY current V6 = GND 100 µA
eNTotal Output Noise Voltage A curve
f = 20Hz to 20kHz 150 µV
APP LICATION SUG GES TION
STAND-BY AND MUTE FUNCTION S
(A) Microprocessor Application
In order to avoid annoying "Pop-Noise" during
Turn-On/Off transients, it is necessary to guaran-
tee the right St-by and mute signa ls sequence.
It is quite simple to obtain this function using a mi-
croprocessor (Fig. 1 and 2).
At first St-by signal (from mP) goes high and the
voltage across the St- by t erminal (Pin 7) starts to
increase exponentially. The external RC network
is intended to turn-on slowly the biasing circuits o f
the amplifier, this to avoid "POP" and "CLICK" on
the outputs.
When this voltage reaches the St-by threshold
level, the amplifier is switched-on and the external
capacitors in series to the input terminals (C3,
C5) start to charge.
It’s necessary to mantain the mut e sign al low until
the capacitors are fully charged, this to avoid t hat
the device goes in play mode causing a loud "Pop
Noise" on the speakers.
A delay of 100-200ms between St-by and mute
signals is suitable for a proper operation.
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+V
S
(V)
V
IN
(mV)
V
ST-BY
pin 7
I
q
(mA)
ST-BY MUTE
PLAY MUTE ST-BY
+18
1.8
0.8
V
MUTE
pin 6
4.1
2.3
OFF
OFF
D96AU259
V
OUT
(V)
2.9
1.3
Figure 2: Microprocessor Driving Signals.
(B) Low Co s t Applica ti on
In low cost applications where the mP is not pre-
sent, the suggested circuit is shown in fig.3.
The St-by and mute terminals are tied together
and they are connected to the supply line via an
external voltage divider.
The device is switched- on/off from the supply line
and the external capacitor C4 is intended to delay
the St-by and m ute thr eshold ex ceeding, avoiding
"Popping" problems.
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1
2
4
Vref
ST-BY 7
IN1
C3 0.22µF
VCC
133
D95AU260B
+
-
-
+
OUT1+
OUT1-
15
14
12
MUTE 6
IN2
C5 0.22µF
+
-
-
+
OUT2+
OUT2-
8
9
S-GND
PW-GND
C1
470µFC2
100nF
R1
47K
C4
10µF
R2
47K
Vs
Figure 3a: Stand-alone Low-cost Applic ation.
Figure 3b: PCB and Component Layout of the Application C ircuit (Fig. 1).
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0.010
0.1
1
10
100 1k 10k 20k
THD(%)
Vcc = 11 V
Rl = 8 ohm
Pou t = 100 m W
Pout = 2W
freq uency (Hz)
Figure 4: Distortion vs Frequency
-5.000
-4.000
-3.000
-2.000
-1.000
0.0
1.0000
2.0000
3.0000
4.0000
5.0000
10 100 1k 10k 100k
Level(dBr)
Vcc = 11V
Rl = 8 ohm
Po ut = 1 W
frequency (H z)
Figure 5: Gain vs Frequency
11.522.533.544.55
0
10
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
Attenuat ion (dB)
Vpin.6(V)
Figure 6: Mute Attenuation vs. V pin.6
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
0
10
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
A ttenuation (dB )
V pin .7 (V)
Figure 7: Stand-By Attenuation vs Vpin.7
3456789101112131415161718
30
35
40
45
50
55
60
65
70 Iq (mA)
Vsupply(V)
Figure 8: Quiescent Current vs. Supply Voltage
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Multiwatt15 V
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 5 0.197
B 2.65 0.104
C 1.6 0.063
D 1 0.039
E 0.49 0.55 0.019 0.022
F 0.66 0.75 0.026 0.030
G 1.02 1.27 1.52 0.040 0.050 0.060
G1 17.53 17.78 18.03 0.690 0.700 0.710
H1 19.6 0.772
H2 20.2 0.795
L 21.9 22.2 22.5 0.862 0.874 0.886
L1 21.7 22.1 22.5 0.854 0.870 0.886
L2 17.65 18.1 0.695 0.713
L3 17.25 17.5 17.75 0.679 0.689 0.699
L4 10.3 10.7 10.9 0.406 0.421 0.429
L7 2.65 2.9 0.104 0.114
M 4.25 4.55 4.85 0.167 0.179 0.191
M1 4.63 5.08 5.53 0.182 0.200 0.218
S 1.9 2.6 0.075 0.102
S1 1.9 2.6 0.075 0.102
Dia1 3.65 3.85 0.144 0.152
OUTLINE AND
MECHANICAL DATA
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Information furnis hed is bel ieved to be ac curate and reliabl e. Howe ver, STMi croelect ronics assum es no respo nsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implic ati on or otherwise un der any patent or patent r ights of STMicroelectronics. Specification me ntioned in t his publication are
subje ct to change w ithout notic e. This public ation supers edes and repl aces all info rmation previous ly sup plied. STMic roelec tronic s product s
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2002 ST M i croelectronic s – Print ed in Italy – All Right s Res erved
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