NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 Vero Ic hyp@ I/ Vcr Vcgisat) PACKAGE | DEVICE (sus) (max) (min/max @ Ics Py* fr TYPE | voLTs | AMPS @ A/V) (V@A/A) | WATTS | (MHz) NPN | 2N1479 40 1.5 | 20-60@.2/4 1.4@.2/.02 5 1S TO-39 | on 1480 55 1.5 | 20-60@.2/4 1.4@.2/.02 5 1.5 2N1481 40 1.5 | 35-100@.2/4 1.4@.2/.01 5 15 2N1482 55 1.5 | 35-100@.2/4 1.4@.2/.01 5 1.5 2N1714 60 75 | 20@0.2/5.0 2.0@.2/.02 0.8 16 2NI717 100 75 | 40@0.2/5.0 2.0@.2/.02 0.8 16 2N3418 60 3.0 | 20-60@1/2 25@1/.1 7 10 2N3419 80 3.0 | 20-60@1/2 25@1/.1 7 40 2N3420 60 3.0 | 40-120@12 25@V.1 7 40 2N3421 80 3.0 | 40-120@12 25@V.1 7 40 NPN | 2N3439 350 1.0 | 40-60@.02/10 | .5@.05/.004 10 15 TO-5 | 2Nn3440 250 1.0 | 40-60@.02/10 | .5@.05/.004 10 15 2N4150 70 5.0 | 40-120@5/5 6@5/.5 8.75 15 2N5010 500" 5 | 30-180@.025/10 | 1.4@.025/.005 4 15 2N5011 600" 5 | 30-180@.025/10 | 1.5@.025/.005 4 15 2N5012 700" 5 | 30-180@.025/10 | 1.6@.025/.005 4 15! 2N5013 800" 5 | 30-180@.02/10 | 1.6@.02/.005 4 15" 2N5152 80 2.0 | 30-90@2.5/5 75@2.5/.25 11.7 40! 2N5154 80 2.0 | 70-200@2.5/5 | .75@2.5/.25 11.7 40' 2N5237 120 5.0 | 40-120@5/5 6@5/.5 8.75 25 2N5238 170 5.0 | 40-120@5/.5 6@5/.5 8.75 25 2N5337 80 5.0 | 60-240@2/2 1.2@5/.5 6 30 2N5338 100 5.0 | 30-120@2/2 1.2@5/.5 6 30 2N5339 100 5.0 | 60-240@2/2 1.2@5/.5 6 30 * Tc =25C Veer * Typical