BU806
BU807
MEDIUM VOLTAGE NPN FAST SWITCHING
DARLINGTON TRANSISTORS
■STMicroelec tronic s PREF ERRE D
SALESTYPES
■NPN DARLINGTONS
■LOW BASE-DRIVE REQUIREMENTS
■INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATION
■HORIZO NTAL DE FLECTION FOR
M ONO CH R OME TVs
DESCRIPTION
The devices are silicon Epitaxial Planar NPN
power transistors in Darlington configuration with
integrated base-emitter speed-up diode, mounted
in TO-220 plastic package.
They can be used in horizontal output stages of
110 oCRT video displays. INTERNAL SCHEMATI C DIAG RAM
October 2003
ABS O LUT E MAXIM UM RATI NG S
Symbol Parameter Value Unit
BU806 BU807
VCBO Collector-base Voltage (IE = 0) 400 330 V
VCEV Collector-emitter Voltage (VBE = -6V) 400 330 V
VCEO Collector-emitter Voltage (IB = 0) 200 150 V
VEBO Emitter-Base Voltage (IC = 0) 6 V
ICCollector Current 8 A
ICM Collector Peak Current 15 A
IDM Damper Diode Peak Forward Current 10 A
IBBase Current 2 A
Ptot Total Power Dissipation at Tcase < 25 oC60 W
Tstg Storage Temperature -65 to 150 oC
TjMax Operating Junction Temperature 150 oC
123
TO-220
®
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