Jul-01-2003
1
BFR380T
VPS05996
1
2
3
NPN Silicon RF Transistor
Preliminary data
High current capability and low figure for
wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz
Low noise figure: 1.1 dB at 1.8 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR380T FCs 1 = B 2 = E 3 = C SC75
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 6 V
Collector-emitter voltage VCES 15
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 2
Collector current IC80 mA
Base current IB14
Total power dissipation1)
TS
66°C
Ptot 380 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS
220 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
Jul-01-2003
2
BFR380T
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 6 9 - V
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0
IEBO - - 1 µA
DC current gain-
IC = 40 mA, VCE = 3 V
hFE 60 130 200 -
Jul-01-2003
3
BFR380T
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 40 mA, VCE = 3 V, f = 1 GHz
fT10 14 - GHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz, emitter grounded
Ccb - 0.5 0.7 pF
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, base grounded
Cce - 0.18 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, collector grounded
Ceb - 1 -
Noise figure
IC = 8 mA, VCE = 3 V, ZS = ZSopt ,
f = 1.8 GHz
Fmin - 1.1 - dB
Power gain, maximum available1)
IC = 40 mA, VCE = 3 V, ZS = ZSopt ,
ZL = ZLopt , f = 1.8 GHz
IC = 40 mA, VCE = 3 V, ZS = ZSopt ,
ZL = ZLopt , f = 3 GHz
Gma
-
-
12.5
8.5
-
-
Transducer gain
IC = 40 mA, VCE = 3 V, ZS = ZL = 50
,
f = 1.8 GHz
IC = 40 mA, VCE = 3 V, ZS = ZL = 50
,
f = 3 GHz
|S21e|2
-
-
10
6
-
-
dB
Third order intercept point at output2)
VCE = 3 V, IC = 40 mA, f = 1.8 GHz,
ZS = ZL = 50
IP3- 29.5 - dBm
1dB Compression point at output
IC = 40 mA, VCE = 3 V, ZS = ZL = 50
,
f = 1.8 GHz
P-1dB - 16 -
1Gma = |S21e / S12e| (k-(k²-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
from 0.1 MHz to 6 GHz
Jul-01-2003
4
BFR380T
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
NF = 1.107 -
ISE = 0.2676 fA
NR = 1.056 -
ISC = 6.9739 pA
IRB = 0.2564 mA
RC = 0.101
MJE = 0.5 -
VTF = 0.338 V
CJC = 840 fF
XCJC = 0.202 -
VJS = 0.75 V
EG = 1.11 eV
TNOM 300 K
IS = 9.965 fA
VAF = 27.69 V
NE = 1.64 -
VAR = 30 V
NC = 1.678 -
RBM = 1.322
CJE = 116.7 fF
TF = 8.789 ps
ITF = 1.529 mA
VJC = 6.949 V
TR = 6.949 ns
MJS = 0-
XTI = 0-
BF = 116.376 -
IKF = 736 mA
BR = 22.802 -
IKR = 0.011 A
RB = 9.71
RE = 221 m
VJE = 0.782 V
XTF = 0.496 -
PTF = 0 deg
MJC = 0.472 -
CJS = 0 fF
NK = 0.5 -
FC = 0.975
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
L1 = 0.762 nH
L2 = 0.706 nH
L3 = 0.382 nH
C1 = 62 fF
C2 = 84 fF
C3 = 180 fF
C4 = 7fF
C5 =40 fF
C
6
= 48 fF
EHA07524
Transistor C’ L
E’
B’ 3
4
C
C
Chip
E
L1
5
C
B2
L
C6
C1
C2C3
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
Valid up to 6GHz
Package SC75
Package Outline
Foot Print
Marking Layout
Packing
Code E6327: Reel ø180 mm = 3.000 Pieces/Reel
Code E6433: Reel ø330 mm = 10.000 Pieces/Reel
1.6
±0.2
0.5
0.10 M0.5
A
0.2
0.2
+0.1
-0.05
1 2
-0.05
3
+0.1
1.6 ±0.2
DIN 6784
acc. to
+0.2
0.20 MA
0.7
0.15
10˚
MAX.
0.1 MAX.
±0.1
±0.1
±0.1
0.8
MAX.
10˚
1.15
0.65
0.4
0.4
0.65
0.50.5
Manufacturer
Type code BCR108T
Example
Pin 1
4
8
1.8
0.2 MAX.
0.9
1.4
1.75
0.45
Pin 1
Impressum
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
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device or system, or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
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