This is information on a product in full production.
April 2012 Doc ID 7662 Rev 5 1/14
14
STD35NF06L
N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET
in a DPAK package
Datasheet — production data
Features
Low threshold drive
Gate charge minimized
Applications
Switching application
Description
This Power MOSFET has been developed using
STMicroelectronics’ unique STripFET process,
which is specifically designed to minimize input
capacitance and gate charge. This renders the
device suitable for use as primary switch in
advanced high-efficiency isolated DC-DC
converters for telecom and computer applications,
and applications with low gate charge driving
requirements.
Figure 1. Internal schematic diagram
Order code VDSS RDS(on) ID
STD35NF06LT4 60V <0.017Ω35A
DPAK
1
3
TAB
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$4!"OR
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3
Table 1. Device summary
Order code Marking Package Packaging
STD35NF06LT4 D35NF06L DPAK Tape and reel
www.st.com
Contents STD35NF06L
2/14 Doc ID 7662 Rev 5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STD35NF06L Electrical ratings
Doc ID 7662 Rev 5 3/14
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage 60 V
VDGR Drain-gate voltage (RGS = 20 kΩ)60V
VGS Gate- source voltage ± 16 V
IDDrain current (continuous) at TC = 25 °C 35 A
IDDrain current (continuous) at TC = 100 °C 24.5 A
IDM(1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 140 A
Ptot Total dissipation at TC = 25 °C 80 W
Derating Factor 0.53 W/°C
dv/dt(2)
2. ISD 35 A, di/dt 100 A/µs, VDD =V(BR)DSS, Tj TJMAX
Peak diode recovery avalanche energy 5 V/ns
EAS (3)
3. Starting Tj = 25 °C, ID = 30 A, VDD =30 V
Single pulse avalanche energy 280 mJ
Tstg Storage temperature -55 to 175 °C
TjMax. operating junction temperature
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 1.88 °C/W
Rthj-amb Thermal resistance junction-to ambient max 100 °C/W
TJ
Maximum lead temperature for soldering
purpose 275 °C
Electrical characteristics STD35NF06L
4/14 Doc ID 7662 Rev 5
2 Electrical characteristics
(TCASE= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage ID = 250 µA, VGS =0 60 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 60 V
VDS = 60 V, TC = 125 °C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ± 16 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 2.5 V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 17.5 A
VGS = 4.5 V, ID = 17.5 A
0.014
0.016
0.017
0.020
Ω
Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Forward
transconductance VDS = 15 V, ID= 17.5 A - 28 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0 -
1700
305
105
pF
pF
pF
td(on)
tr
td(off)
tf
Tur n - o n de l ay t i me
Rise time
Turn-off delay time
Fall time
VDD = 30 V, ID = 27.5 A
RG=4.7 Ω VGS = 4.5 V
(see Figure 13)
-
20
100
40
20
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 48 V, ID = 55 A,
VGS = 4.5 V, RG=4.7 Ω
(see Figure 14)
-
25
5
10
33 nC
nC
nC
STD35NF06L Electrical characteristics
Doc ID 7662 Rev 5 5/14
Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
-35
140
A
A
VSD (2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 35 A, VGS = 0 - 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 35 A,
di/dt = 100 A/µs,
VDD = 30 V, Tj = 150 °C
(see Figure 15)
-
80
200
5
ns
nC
A
Electrical characteristics STD35NF06L
6/14 Doc ID 7662 Rev 5
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on-resistance
STD35NF06L Electrical characteristics
Doc ID 7662 Rev 5 7/14
Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs. temperature
Figure 11. Normalized on-resistance vs.
temperature
Figure 12. Source-drain diode forward
characteristics
Test circuit STD35NF06L
8/14 Doc ID 7662 Rev 5
3 Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped Inductive load test
circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.31000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
STD35NF06L Package mechanical data
Doc ID 7662 Rev 5 9/14
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 7. DPAK (TO-252) mechanical data
Dim.
mm
Min. Typ. Max.
A2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b0.64 0.90
b4 5.20 5.40
c0.45 0.60
c2 0.48 0.60
D6.00 6.20
D1 5.10
E6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H 9.35 10.10
L1 1.50
L1 2.80
L2 0.80
L4 0.60 1
R0.20
V2
Package mechanical data STD35NF06L
10/14 Doc ID 7662 Rev 5
Figure 19. DPAK (TO-252) drawing
Figure 20. DPAK footprint(a)
a. All dimension are in millimeters
0068772_H
6.7
1.6
1.6
2.3
2.3
6.7 1.83
AM08850v1
STD35NF06L Packing mechanical data
Doc ID 7662 Rev 5 11/14
5 Packing mechanical data
Table 8. DPAK (TO-252) tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min. Max. Min. Max.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R40
T 0.25 0.35
W 15.7 16.3
Packing mechanical data STD35NF06L
12/14 Doc ID 7662 Rev 5
Figure 21. Tape for DPAK (TO-252)
Figure 22. Reel for DPAK (TO-252)
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
B1
For machine ref. only
including draft and
radii concentric around B0
AM08852v1
Top cover
tape
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At slot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
STD35NF06L Revision history
Doc ID 7662 Rev 5 13/14
6 Revision history
Table 9. Revision history
Date Revision Changes
21-Jun-2004 2Preliminary version
06-Jul-2006 3 New template, no content change
20-Feb-2007 4 Typo mistake on page 1
19-Apr-2012 5 Added new value in Table 4: On/off states (VGS(th) max).
Minor text changes.
STD35NF06L
14/14 Doc ID 7662 Rev 5
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