MJ2500 - MJ2501 PNP MJ3000 - MJ3001 NPN SILICON EPITAXIAL-BASE DARLINGTON The MJ2500, and MJ2501 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary PNP types are the MJ3000 and MJ3001 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value MJ2500 MJ3000 VCBO VCEO Collector-Base Voltage Collector-EmitterVoltage Emitter-Base Voltage IC Collector Current 60 Vdc IE=0 MJ2501 MJ3001 80 MJ2500 MJ3000 60 Vdc IB=0 MJ2501 MJ3001 VEBO IC=0 Unit MJ2500 MJ3000 MJ2501 MJ3001 MJ2500 MJ3000 MJ2501 MJ3001 COMSET SEMICONDUCTORS 80 5.0 Vdc 10 Adc 1/4 MJ2500 - MJ2501 PNP MJ3000 - MJ3001 NPN Symbol Ratings IB Base Current PT Power Dissipation TJ Ts Junction Storage Temperature MJ2500 MJ3000 MJ2501 MJ3001 MJ2500 MJ3000 MJ2501 MJ3001 @ TC < 25 MJ2500 MJ3000 MJ2501 MJ3001 Value Unit 0.2 Adc 150 Watts 200 -65 to +200 C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case MJ2500 MJ3000 MJ2501 MJ3001 Value Unit 1.17 C/W ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol Ratings Test Condition(s) MJ2500 MJ3000 BVCEO Collector-Emitter Breakdown Voltage (*) Min Typ Mx Unit 60 - Vdc IC=100 mAdc, IB=0 MJ2501 MJ3001 COMSET SEMICONDUCTORS 80 - - 2/4 MJ2500 - MJ2501 PNP MJ3000 - MJ3001 NPN Symbol Ratings Test Condition(s) VCE=30 Vdc, IB=0 ICEO IEBO MJ2500 MJ3000 Min Typ Mx Unit - - Collector Cutoff Current Emitter Cutoff Current VCE=40 Vdc, IB=0 MJ2501 MJ3001 - - VBE=5.0 Vdc, IC=0 MJ2500 MJ2501 MJ3000 MJ3001 - - VCB=60 V, RBE=1.0 k ohm MJ2500 MJ3000 - - 1.0 mAdc 2.0 mAdc 1.0 VCB=80 V, RBE=1.0 k ohm ICER Collector-Emitter Leakage Current MJ2501 MJ3001 - mAdc VCB=60 V, RBE=1.0 k ohm, TC=150C MJ2500 MJ3000 - 5.0 VCB=80 V, RBE=1.0 k ohm, TC=150C IC=5.0 A, IB=20 mAdc VCE(SAT) Collector-Emitter saturation Voltage (*) IC=10 A, IB=50 mAdc VBE hfe Base-Emitter Voltage (*) DC Current Gain (*) IC=5.0 Adc, VCE=3.0Vdc VCE=3.0 Vdc, IC=5.0 Adc MJ2501 MJ3001 MJ2500 MJ3000 MJ2501 MJ3001 MJ2500 MJ3000 MJ2501 MJ3001 MJ2500 MJ3000 MJ2501 MJ3001 MJ2500 MJ3000 MJ2501 MJ3001 - - - - 2.0 Vdc - - 4.0 - - 3 V 1000 - - - For PNP types current and voltage values are negative (*) Pulse Width 300 s, Duty Cycle 2.0% COMSET SEMICONDUCTORS 3/4 MJ2500 - MJ2501 PNP MJ3000 - MJ3001 NPN MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Collector Emitter COMSET SEMICONDUCTORS 4/4