1N5221B to 1N5267B
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Rev. 2.0, 31-Jan-12 1Document Number: 85588
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Small Signal Zener Diodes
FEATURES
• Silicon planar power Zener diodes
• Standard Zener voltage tolerance is ± 5 %
• These diodes are also available in MiniMELF
case with the type designation TZM5221 to
TZM5267, SOT-23 case with the type
designations MMBZ5225 to MMBZ5267 and
SOD-123 case with the types designations
MMSZ5225 to MMSZ5267
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Voltage stabilization
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
VZ range nom. 2.4 to 75 V
Test current IZT 1.7 to 20 mA
VZ specification Thermal equilibrium
Int. construction Single
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
1N5221B to 1N5267B 1N5221B to 1N5267B-series-TR 10 000 per 13" reel 30 000/box
1N5221B to 1N5267B 1N5221B to 1N5267B-series-TAP 10 000 per ammopack
(52 mm tape) 30 000/box
PACKAGE
PACKAGE NAME WEIGHT MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING
CONDITIONS
DO-35 125 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation TL 25 °C Ptot 500 mW
Zener current IZPtot/VZmA
Thermal resistance junction to ambient air I = 4 mm, TL = constant RthJA 300 K/W
Junction temperature Tj175 °C
Storage temperature range Tstg - 65 to + 175 °C
Forward voltage (max.) IF = 200 mA VF1.1 V
1N5221B to 1N5267B
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Rev. 2.0, 31-Jan-12 2Document Number: 85588
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Note
(1) Based on DC measurement at thermal equilibrium; lead length = 9.5 (3/8"); thermal resistance of heat sink = 30 K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE (1) TEST CURRENT
REVERSE
LEAKAGE
CURRENT
DYNAMIC RESISTANCE
f = 1 kHz
TEMPERATURE
COEFFICIENT
VZ at IZT1 IZT1 IZT2 IR at VRZZ at IZT1 (1) ZZK at IZT2 VZ
VmA μA V%/K
NOM. MAX. MAX. MAX. TYP.
1N5221B 2.4 20 0.25 100 1 30 1200 - 0.085
1N5222B 2.5 20 0.25 100 1 30 1250 - 0.085
1N5223B 2.7 20 0.25 75 1 30 1300 - 0.08
1N5224B 2.8 20 0.25 75 1 30 1400 - 0.08
1N5225B 3 20 0.25 50 1 29 1600 - 0.075
1N5226B 3.3 20 0.25 25 1 28 1600 - 0.07
1N5227B 3.6 20 0.25 15 1 24 1700 - 0.065
1N5228B 3.9 20 0.25 10 1 23 1900 - 0.06
1N5229B 4.3 20 0.25 5 1 22 2000 0.055
1N5230B 4.7 20 0.25 5 2 19 1900 0.03
1N5231B 5.1 20 0.25 5 2 17 1600 0.03
1N5232B 5.6 20 0.25 5 3 11 1600 0.038
1N5233B 6 20 0.25 5 3.5 7 1600 0.038
1N5234B 6.2 20 0.25 5 4 7 1000 0.045
1N5235B 6.8 20 0.25 3 5 5 750 0.05
1N5236B 7.5 20 0.25 3 6 6 500 0.058
1N5237B 8.2 20 0.25 3 6.5 8 500 0.062
1N5238B 8.7 20 0.25 3 6.5 8 600 0.065
1N5239B 9.1 20 0.25 3 7 10 600 0.068
1N5240B 10 20 0.25 3 8 17 600 0.075
1N5241B 11 20 0.25 2 8.4 22 600 0.076
1N5242B 12 20 0.25 1 9.1 30 600 0.077
1N5243B 13 9.5 0.25 0.5 9.9 13 600 0.079
1N5244B 14 9 0.25 0.1 10 15 600 0.082
1N5245B 15 8.5 0.25 0.1 11 16 600 0.082
1N5246B 16 7.8 0.25 0.1 12 17 600 0.083
1N5247B 17 7.4 0.25 0.1 13 19 600 0.084
1N5248B 18 7 0.25 0.1 14 21 600 0.085
1N5249B 19 6.6 0.25 0.1 14 23 600 0.086
1N5250B 20 6.2 0.25 0.1 15 25 600 0.086
1N5251B 22 5.6 0.25 0.1 17 29 600 0.087
1N5252B 24 5.2 0.25 0.1 18 33 600 0.088
1N5253B 25 5 0.25 0.1 19 35 600 0.089
1N5254B 27 4.6 0.25 0.1 21 41 600 0.09
1N5255B 28 4.5 0.25 0.1 21 44 600 0.091
1N5256B 30 4.2 0.25 0.1 23 49 600 0.091
1N5257B 33 3.8 0.25 0.1 25 58 700 0.092
1N5258B 36 3.4 0.25 0.1 27 70 700 0.093
1N5259B 39 3.2 0.25 0.1 30 80 800 0.094
1N5260B 43 3 0.25 0.1 33 93 900 0.095
1N5261B 47 2.7 0.25 0.1 36 105 1000 0.095
1N5262B 51 2.5 0.25 0.1 39 125 1100 0.096
1N5263B 56 2.2 0.25 0.1 43 150 1300 0.096
1N5264B 60 2.1 0.25 0.1 46 170 1400 0.097
1N5265B 62 2 0.25 0.1 47 185 1400 0.097
1N5266B 68 1.8 0.25 0.1 52 230 1600 0.097
1N5267B 75 1.7 0.25 0.1 56 270 1700 0.098
1N5221B to 1N5267B
www.vishay.com Vishay Semiconductors
Rev. 2.0, 31-Jan-12 3Document Number: 85588
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Thermal Resistance vs. Lead Length
Fig. 2 - Typical Change of Working Voltage under Operating
Conditions at Tamb= 25 °C
Fig. 3 - Typical Change of Working Voltage vs.
Junction Temperature
Fig. 4 - Total Power Dissipation vs. Ambient Temperature
Fig. 5 - Temperature Coefficient of VZ vs. Z-Voltage
Fig. 6 - Diode Capacitance vs. Z-Voltage
95 9611
0 5 10 15
0
100
200
300
400
500
20
ll
RthJA - Therm. Resist. Junction Ambient (K/W)
I - Lead Length (mm)
TL = constant
10 15 20
1
10
100
1000
V
Z
- Voltage Change (mV)
V
Z
- Z-Voltage (V)
25
95 9598
Tj = 25 °C
IZ = 5 mA
05
- 60 60 120 180
0.8
0.9
1.0
1.1
1.2
1.3
V
Ztn
- Relative Voltage Change
Tj - Junction Temperature (°C)
240
95 9599
0
VZtn = VZt/VZ (25 °C)
0
TK
VZ
= 10 x 10-4/K
8 x 10-4/K
2 x 10-4/K
6 x 10-4/K
4 x 10-4/K
- 4 x 10-4/K
- 2 x 10-4/K
0 120 160
0
100
300
400
500
600
Ptot - Total Power Dissipation (mW)
Tamb - Ambient Temperature (°C)
200
95 9602
200
80
40
- 5
0
5
10
15
VZ - Z-Voltage (V)
95 9600
IZ = 5 mA
0 10 203040 50
TKVZ - Temperature Coefficient
of VZ (10-4/K)
10 15
0
50
100
150
200
C
D
- Diode Capacitance (pF)
V
Z
- Z-Voltage (V)
25
95 9601
20
T
j
= 25 °C
V
R
= 2 V
05
1N5221B to 1N5267B
www.vishay.com Vishay Semiconductors
Rev. 2.0, 31-Jan-12 4Document Number: 85588
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 8 - Z-Current vs. Z-Voltage
Fig. 9 - Z-Current vs. Z-Voltage
Fig. 10 - Differential Z-Resistance vs. Z-Voltage
Fig. 11 - Thermal Response
0 0.2 0.4 0.6 0.8
0.001
0.01
0.1
1
10
100
1.0
95 9605
IF - Forward Current (mA)
VF - Forward Voltage (V)
Tj = 25 °C
820
95 9604
0
20
40
60
80
100
IZ - Z-Current (mA)
Ptot = 500 mW
Tamb = 25 °C
046 12
VZ - Z-Voltage (V)
15 20 25 30
0
10
20
30
40
50
IZ - Z-Current (mA)
VZ - Z-Voltage (V)
35
95 9607
Ptot = 500 mW
Tamb = 25 °C
0 101520
1
10
100
1000
25
95 9606
Tj = 25 °C
IZ = 1 mA
5 mA
10 mA
V
Z
- Z-Voltage (V)
r
Z
- Differential Z-Resistance (Ω)
5
1
10
100
1000
Zthp - Thermal Resistance for Pulse Cond. (KW)
tp - Pulse Length (ms) 95 9603
10-1 100101102
tp/T = 0.5
tp/T = 0.2
tp/T = 0.1
tp/T = 0.05
tp/T = 0.02
tp/T = 0.01
Single Pulse RthJA = 300 K/W
T = Tjmax - Tamb
iZM = (- VZ + (VZ
2 + 4rzj x T/Zthp) 1/2)/(2rzj)
1N5221B to 1N5267B
www.vishay.com Vishay Semiconductors
Rev. 2.0, 31-Jan-12 5Document Number: 85588
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): DO-35_1N52xx
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Revision: 12-Mar-12 1Document Number: 91000
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