ZXMP6A17DN8
Document number: DS33588 Rev. 5 - 2
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ZXMP6A17DN8
DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON) Max
ID
TA = +25°C
(Notes 7 & 9)
-60V
125mΩ @ VGS = -10V
-3.4A
190mΩ @ VGS = -4.5V
-2.8A
Description
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Disconnect Switches
Motor Control
Ordering Information (Notes 4 & 5)
Product
Compliance
Marking
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
ZXMP6A17DN8TA
AEC-Q101
ZXMP6A17D
7
12
500
ZXMP6A17DN8TC
AEC-Q101
ZXMP6A17D
13
12
2,500
ZXMP6A17DN8QTC
Automotive
ZXMP6A17D
13
12
2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Equivalent Circuit
ZXMP6A17D = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 17 = 2017)
WW = Week (01 to 53)
Top View
SO-8
Top View
D1S1
G1
S2
G2
D1
D2
D2
D2
S2
G2
D1
S1
G1
e3
ZXMP6A17DN8
Document number: DS33588 Rev. 5 - 2
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ZXMP6A17DN8
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-60
V
Gate-Source Voltage
VGS
20
V
Continuous Drain Current
VGS = 10V
(Notes 7 & 9)
ID
-3.42
A
TA = +70ºC
(Notes 7 & 9)
-2.73
(Notes 6 & 9)
-2.7
Pulsed Drain Current
(Notes 8 & 9)
IDM
-15.6
A
Continuous Source Current (Body Diode)
(Notes 7 & 9)
IS
-3.4
A
Pulsed Source Current (Body Diode)
(Notes 8 & 9)
ISM
-15.6
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Notes 6 & 9)
PD
1.25
10.0
W
mW/°C
(Notes 6 & 10)
1.81
14.5
(Notes 7 & 9)
2.15
17
Thermal Resistance, Junction to Ambient
(Notes 6 & 9)
RθJA
100
°C /W
(Notes 6 & 10)
70
(Notes 7 & 9)
60
Thermal Resistance, Junction to Lead
(Notes 9 & 11)
RθJL
51.68
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (6), except the device is measured at t 10 sec.
8. Same as note (6), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. Thermal resistance from junction to solder-point.
ZXMP6A17DN8
Document number: DS33588 Rev. 5 - 2
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ZXMP6A17DN8
Thermal Characteristics
100m 110
1m
10m
100m
1
10
Single Pulse
TAMB=25OC
RDS(ON)
Limited
100s
1ms
10ms
100ms
1s
DC
Safe Operating Area
-ID Drain Current (A)
-VDS Drain-Source Voltage (V) 020 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25mm x 25mm
1oz FR4
Derating Curve
Temperature (OC)
Max Power Dissipation (W)
100μ 1m 10m 100m 110 100 1k
0
10
20
30
40
50
60
70
80 TAMB=25OC
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (OC/W)
Pulse Width (s) 100μ 1m 10m 100m 110 100 1k
1
10
100 Single Pulse
TAMB=25OC
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
ZXMP6A17DN8
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-60
V
ID = -250µA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
-0.5
µA
VDS = -60V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
-1.0
V
ID = -250µA, VDS = VGS
Static Drain-Source On-Resistance (Note 12)
RDS(ON)
0.125
Ω
VGS = -10V, ID = -2.3A
0.190
VGS = -4.5V, ID = -1.9A
Forward Transconductance (Notes 12 & 13)
gfs
4.7
s
VDS = -15V, ID = -2.3A
Diode Forward Voltage (Note 12)
VSD
-0.85
-0.95
V
IS = -2.0A, VGS = 0V
Reverse Recovery Time (Note 13)
tRR
25.1
ns
IS = -1.7A, di/dt = 100A/µs
Reverse Recovery Charge (Note 13)
QRR
27.2
nC
DYNAMIC CHARACTERISTICS (Note 13)
Input Capacitance
Ciss
637
pF
VDS = -30V, VGS = 0V
f = 1MHz
Output Capacitance
Coss
70
pF
Reverse Transfer Capacitance
Crss
53
pF
Total Gate Charge (Note 14)
Qg

9.0

nC
VGS = -4.5V
VDS = -30V
ID = -2.2A
Total Gate Charge (Note 14)
Qg
17.7
nC
VGS = -10V
Gate-Source Charge (Note 14)
Qgs
1.6
nC
Gate-Drain Charge (Note 14)
Qgd
4.4
nC
Turn-On Delay Time (Note 14)
tD(ON)
2.6
ns
VDD = -30V, VGS = -10V
ID = -1A, Rg 6.0Ω
Turn-On Rise Time (Note 14)
tR
3.4
ns
Turn-Off Delay Time (Note 14)
tD(OFF)
26.2
ns
Turn-Off Fall Time (Note 14)
tF
11.3
ns
Notes: 12. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%.
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.
ZXMP6A17DN8
Document number: DS33588 Rev. 5 - 2
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Typical Characteristics
0.1 1 10
0.01
0.1
1
10
0.1 1 10
0.01
0.1
1
10
1 2 3 4
0.1
1
10
-50 0 50 100 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1 1 10
0.01
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
10V
2V
3.5V
-VGS
2.5V
4V
3V
Output Characteristics
T = 25OC
-VGS
-ID Drain Current (A)
-VDS Drain-Source Voltage (V)
5V
1.5V
3.5V
3V
2V
4.5V
10V
2.5V
Output Characteristics
T = 150OC
-ID Drain Current (A)
-VDS Drain-Source Voltage (V)
5V
Typical Transfer Characteristics
-VDS = 10V
T = 25OC
T = 150OC
-ID Drain Current (A)
-VGS Gate-Source Voltage (V) Normalised Curves v Temperature
RDS(ON)
VGS = -10V
ID = - 2.3A
VGS(TH)
VGS = VDS
ID = -250A
Normalised RDS(ON) and VGS(TH)
Tj Junction Temperature (OC)
VGS= 0V
4V
10V
3V
2V
3.5V
2.5V
On-Resistance v Drain Current
T = 25OC
-VGS
RDS(ON) Drain-Source On-Resistance 
-ID Drain Current (A)
5V
T = 150OC
T = 25OC
Source-Drain Diode Forward Voltage
-VSD Source-Drain Voltage (V)
-ISD Reverse Drain Current (A)
ZXMP6A17DN8
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Typical Characteristics (Cont.)
0.1 1 10
0
200
400
600
800
1000
CRSS
COSS
CISS
VGS = 0V
f = 1MHz
C Capacitance (pF)
-VDS - Drain - Source Voltage (V) 0 2 4 6 8 10 12 14 16 18
0
2
4
6
8
10
ID = -2.3A
VDS = -30V
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage Q - Charge (nC)
-VGS Gate-Source Voltage (V)
Test Circuits
ZXMP6A17DN8
Document number: DS33588 Rev. 5 - 2
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Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SO-8
1
b
e
E
A
A1
9° (All sides)
4°± 3°
c
Q
h
45°
R 0.1
7°
D
E0
E1
L
Seating Plane
Gauge Plane
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SO-8
CX
Y
Y1
X1
SO-8
Dim
Min
Max
Typ
A
1.40
1.50
1.45
A1
0.10
0.20
0.15
b
0.30
0.50
0.40
c
0.15
0.25
0.20
D
4.85
4.95
4.90
E
5.90
6.10
6.00
E1
3.80
3.90
3.85
E0
3.85
3.95
3.90
e
--
--
1.27
h
-
--
0.35
L
0.62
0.82
0.72
Q
0.60
0.70
0.65
All Dimensions in mm
Dimensions
Value (in mm)
C
1.27
X
0.802
X1
4.612
Y
1.505
Y1
6.50
ZXMP6A17DN8
Document number: DS33588 Rev. 5 - 2
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