ZXMP6A17DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET Product Summary Features BVDSS RDS(ON) Max -60V 125m @ VGS = -10V 190m @ VGS = -4.5V ID TA = +25C (Notes 7 & 9) -3.4A -2.8A Description This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. DC-DC Converters Power Management Functions Disconnect Switches Motor Control Low On-Resistance Fast Switching Speed Low Threshold Low Gate Drive Low Profile SOIC Package Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Applications Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method 208 e3 Weight: 0.074 grams (Approximate) SO-8 S1 D1 G1 D1 S2 D2 G2 D2 Top View D1 G1 Top View D2 G2 S1 S2 Equivalent Circuit Ordering Information (Notes 4 & 5) Product ZXMP6A17DN8TA ZXMP6A17DN8TC ZXMP6A17DN8QTC Notes: Compliance AEC-Q101 AEC-Q101 Automotive Marking ZXMP6A17D ZXMP6A17D ZXMP6A17D Reel Size (inches) 7 13 13 Tape Width (mm) 12 12 12 Quantity per Reel 500 2,500 2,500 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information ZXMP6A17D = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 17 = 2017) WW = Week (01 to 53) ZXMP6A17DN8 Document number: DS33588 Rev. 5 - 2 1 of 8 www.diodes.com February 2017 (c) Diodes Incorporated ZXMP6A17DN8 Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGS 20 V (Notes 7 & 9) Continuous Drain Current VGS = 10V -3.42 TA = +70C (Notes 7 & 9) ID -2.73 (Notes 6 & 9) A -2.7 Pulsed Drain Current (Notes 8 & 9) IDM -15.6 A Continuous Source Current (Body Diode) (Notes 7 & 9) IS -3.4 A Pulsed Source Current (Body Diode) (Notes 8 & 9) ISM -15.6 A Value Unit Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol (Notes 6 & 9) Power Dissipation Linear Derating Factor (Notes 6 & 10) PD (Notes 7 & 9) 1.25 10.0 1.81 14.5 2.15 17 100 70 60 Thermal Resistance, Junction to Ambient (Notes 6 & 9) (Notes 6 & 10) (Notes 7 & 9) RJA Thermal Resistance, Junction to Lead (Notes 9 & 11) RJL 51.68 TJ, TSTG -55 to +150 Operating and Storage Temperature Range Notes: W mW/C C/W C 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 7. Same as note (6), except the device is measured at t 10 sec. 8. Same as note (6), except the device is pulsed with D = 0.02 and pulse width 300s. The pulse current is limited by the maximum junction temperature. 9. For a dual device with one active die. 10. For a device with two active die running at equal power. 11. Thermal resistance from junction to solder-point. ZXMP6A17DN8 Document number: DS33588 Rev. 5 - 2 2 of 8 www.diodes.com February 2017 (c) Diodes Incorporated ZXMP6A17DN8 Thermal Characteristics 1.6 Max Power Dissipation (W) -ID Drain Current (A) RDS(ON) 10 Limited 1 DC 100m 1s 100ms 10m 10ms Single Pulse O T AMB=25 C 1m 100m 1ms 1 100s 10 -VDS Drain-Source Voltage (V) 1.4 25mm x 25mm 1oz FR4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 O Temperature ( C) Safe Operating Area Derating Curve O 70 T AMB=25 C Maximum Power (W) O Thermal Resistance ( C/W) 80 60 50 D=0.5 40 30 20 Single Pulse D=0.2 D=0.05 10 0 100 D=0.1 1m 10m 100m 1 10 100 1k 10 1 100 Pulse Width (s) Document number: DS33588 Rev. 5 - 2 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance ZXMP6A17DN8 Single Pulse O T AMB=25 C 100 Pulse Power Dissipation 3 of 8 www.diodes.com February 2017 (c) Diodes Incorporated ZXMP6A17DN8 Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -60 V ID = -250A, VGS = 0V Zero Gate Voltage Drain Current IDSS -0.5 A VDS = -60V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V VGS(TH) -1.0 V ID = -250A, VDS = VGS ON CHARACTERISTICS Gate Threshold Voltage RDS(ON) Forward Transconductance (Notes 12 & 13) gfs 4.7 Diode Forward Voltage (Note 12) VSD -0.85 Reverse Recovery Time (Note 13) tRR Reverse Recovery Charge (Note 13) QRR Input Capacitance Output Capacitance Reverse Transfer Capacitance Crss Total Gate Charge (Note 14) Qg Total Gate Charge (Note 14) Gate-Source Charge (Note 14) Gate-Drain Charge (Note 14) Static Drain-Source On-Resistance (Note 12) 0.125 0.190 VGS = -10V, ID = -2.3A VGS = -4.5V, ID = -1.9A s VDS = -15V, ID = -2.3A -0.95 V IS = -2.0A, VGS = 0V 25.1 ns 27.2 nC Ciss 637 pF Coss 70 pF 53 pF 9.0 nC Qg 17.7 nC Qgs 1.6 nC Qgd 4.4 nC tD(ON) 2.6 ns Turn-On Rise Time (Note 14) tR 3.4 ns Turn-Off Delay Time (Note 14) tD(OFF) 26.2 ns tF 11.3 ns IS = -1.7A, di/dt = 100A/s DYNAMIC CHARACTERISTICS (Note 13) Turn-On Delay Time (Note 14) Turn-Off Fall Time (Note 14) Notes: VDS = -30V, VGS = 0V f = 1MHz VGS = -4.5V VGS = -10V VDS = -30V ID = -2.2A VDD = -30V, VGS = -10V ID = -1A, Rg 6.0 12. Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. 13. For design aid only, not subject to production testing. 14. Switching characteristics are independent of operating junction temperatures. ZXMP6A17DN8 Document number: DS33588 Rev. 5 - 2 4 of 8 www.diodes.com February 2017 (c) Diodes Incorporated ZXMP6A17DN8 Typical Characteristics 10V -ID Drain Current (A) T = 150 C 4V 3.5V 3V 1 2.5V 4.5V 3.5V 3V 2.5V 10 2V 0.1 5V 10V O 5V -ID Drain Current (A) O T = 25 C 10 -VGS 0.01 1 2V -VGS 0.1 1.5V 0.01 0.1 1 0.1 10 1 10 -VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics -ID Drain Current (A) 10 O T = 150 C 1 O T = 25 C 0.1 -VDS = 10V 1 2 3 4 Normalised RDS(ON) and VGS(TH) 1.8 VGS = -10V 1.6 ID = - 2.3A RDS(ON) 1.4 1.2 1.0 ID = -250A 0.6 -50 -VGS Gate-Source Voltage (V) 2.5V 3V 3.5V 4V 5V 0.1 10V O T = 25 C 0.01 0.1 1 -ID Drain Current (A) 10 On-Resistance v Drain Current ZXMP6A17DN8 Document number: DS33588 Rev. 5 - 2 100 150 Tj Junction Temperature ( C) -ISD Reverse Drain Current (A) RDS(ON) Drain-Source On-Resistance -VGS 1 50 Normalised Curves v Temperature 2V 10 0 O Typical Transfer Characteristics 100 VGS(TH) VGS = VDS 0.8 10 O T = 150 C 1 O T = 25 C 0.1 VGS= 0V 0.01 0.2 0.4 0.6 0.8 1.0 1.2 -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com February 2017 (c) Diodes Incorporated ZXMP6A17DN8 C Capacitance (pF) 1000 VGS = 0V f = 1MHz 800 600 CISS COSS 400 CRSS 200 0 0.1 1 10 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage -VGS Gate-Source Voltage (V) Typical Characteristics (Cont.) 10 8 6 4 ID = -2.3A 2 VDS = -30V 0 0 2 4 6 8 10 12 Q - Charge (nC) 14 16 18 Gate-Source Voltage v Gate Charge Test Circuits ZXMP6A17DN8 Document number: DS33588 Rev. 5 - 2 6 of 8 www.diodes.com February 2017 (c) Diodes Incorporated ZXMP6A17DN8 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 E 1 b E1 h ) ides All s 9 ( 1 0. e c 4 3 A R Q 45 7 A1 E0 L Gauge Plane Seating Plane SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e --1.27 h -0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm D Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 X1 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 Y1 Y C ZXMP6A17DN8 Document number: DS33588 Rev. 5 - 2 X 7 of 8 www.diodes.com February 2017 (c) Diodes Incorporated ZXMP6A17DN8 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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