2011-07-25
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BCV62
PNP Silicon Double Transistor
• To be used as a current mirror
• Good thermal coupling and VBE matching
• High current gain
• Low collector-emitter saturation voltage
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
1
2
3
4
EHA00013
C2 (1)
Tr.2Tr.1
C1 (2)
E1 (3) E2 (4)
Type Marking Pin Configuration Package
BCV62A
BCV62B
BCV62C
3Js
3Ks
3Ls
1 = C2
1 = C2
1 = C2
2 = C1
2 = C1
2 = C1
3 = E1
3 = E1
3 = E1
4 = E2
4 = E2
4 = E2
SOT143
SOT143
SOT143
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
(transistor T1)
VCEO 30 V
Collector-base voltage (open emitter)
(transistor T1)
VCBO 30
Emitter-base voltage VEBS 6
DC collector current IC100 mA
Peak collector current ICM 200
Base peak current (transistor T1) IBM 200
Total power dissipation, TS = 99 °C Ptot 300 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS ≤170 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
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BCV62
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics of T1
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
V(BR)CEO 30 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 30 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 6 - -
Collector cutoff current
VCB = 30 V, IE = 0
ICBO - - 15 nA
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
ICBO - - 5 µA
DC current gain 1)
IC = 0.1 mA, VCE = 5 V
hFE 100 - - -
DC current gain 1)
IC = 2 mA, VCE = 5 V
hFE
125
220
420
180
290
520
220
475
800
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
-
-
75
250
300
650
mV
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
-
-
700
850
-
-
Base-emitter voltage 1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(ON)
600
-
650
-
750
820
BCV62A
BCV62B
BCV62C
1) Pulse test: t ≤ 300µs, D = 2%
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BCV62
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Base-emitter forward voltage
IE = 10 µA
IE = 250 mA
VBES
0.4
-
-
-
-
1.8
V
Matching of transistor T1 and transistor T2
at IE2 = 0.5mA and VCE1 = 5V
TA = 25 °C
TA = 150 °C
IC1 / IC2
-
0.7
0.7
-
-
-
-
1.3
1.3
-
Thermal coupling of transistor T1 and
transistor T2 1) T1: VCE = 5V
Maximum current of thermal stability of IC1
IE2 - 5 - mA
AC characteristics of transistor T1
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fT- 250 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 1.5 - pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - 8 -
Noise figure
IC = 200 µA, VCE = 5 V, RS = 2 kΩ,
f = 1 kHz, ∆ f = 200 Hz
F- 2 - dB
Short-circuit input impedance
IC = 1 mA, VCE = 10 V, f = 1 kHz
h11e - 4.5 - kΩ
Open-circuit reverse voltage transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
h12e - 2 - 10-4
Short-circuit forward current transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
h21e 100 - 900 -
Open-circuit output admittance
IC = 1 mA, VCE = 10 V, f = 1 kHz
h22e - 30 - µS
1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm
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BCV62
Test circuit for current matching
Ι
C1
CE1
V
A
...
CO
V
E2
Ι
EHN00003
= constant
V
CO
T2T1
21
43
Note: Voltage drop at contacts: VCO < 2/3 VT = 16mV
Characteristic for determination of VCE1 at specified RE range with
IE2 as parameter under condition of IC1/IE2 = 1.3
EHN00004
T1 T2
...
A
21
43
VCE1
C1
Ι
Ι
E2 = constant
RERE
Note: BCV62 with emitter resistors
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BCV62
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB)
0
1
2
3
4
5
6
7
8
9
10
pF
12
CCB(CEB)
CCB
CEB
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
50
100
150
200
250
mW
350
Ptot
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00941BCV 62
-6
0
10
5
D
=
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
totmax
tot
P
DC
P
p
t
t
p
=
DT
t
p
T
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BCV62
Package SOT143
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
RF s
2005, June
Date code (YM)
BFP181
Type code
56
Pin 1
0.8 0.81.2
0.9 1.1 0.9
1.2
0.8
0.8
0.8
-0.05
+0.1
1.9
1.7
±0.1
2.9
+0.1
-0.05
0.4
0.1 MAX.
12
34
0.25
M
B
±0.1
1
10˚ MAX.
0.15 MIN.
0.2 A
M
2.4 ±0.15
0.2
10˚ MAX.
A
1.3 ±0.1
0...8˚
0.08...0.15
2.6
4
3.15
Pin 1
8
0.2
1.15
B
Manufacturer
2011-07-25
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BCV62
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
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