MMBT6517LT1G High Voltage Transistor NPN Silicon Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Symbol Value Unit Collector - Emitter Voltage Rating VCEO 350 V Collector - Base Voltage VCBO 350 V Emitter - Base Voltage VEBO 5.0 V Base Current IB 25 mA Collector Current - Continuous IC 100 mA Symbol Max Unit PD 225 mW 1.8 mW/C RqJA 556 C/W PD 300 mW 2.4 mW/C RqJA 417 C/W TJ, Tstg -55 to +150 2 EMITTER 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. SOT-23 (TO-236AB) CASE 318 STYLE 6 MARKING DIAGRAM 1Z M G G 1 1Z = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBT6517LT1G SOT-23 (Pb-Free) 3000 Tape & Reel MMBT6517LT3G SOT-23 10,000 Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2011 September, 2011 - Rev. 7 1 Publication Order Number: MMBT6517LT1/D MMBT6517LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max 350 - 350 - 6.0 - - 50 - 50 20 30 30 20 15 - - 200 200 - - - - - 0.30 0.35 0.50 1.0 - - - 0.75 0.85 0.90 - 2.0 40 200 - 6.0 - 80 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 1.0 mA) V(BR)CEO Collector -Base Breakdown Voltage (IC = 100 mA) V(BR)CBO Emitter -Base Breakdown Voltage (IE = 10 mA) V(BR)EBO Collector Cutoff Current (VCB = 250 V) ICBO Emitter Cutoff Current (VEB = 5.0 V) IEBO V V V nA nA ON CHARACTERISTICS hFE DC Current Gain (IC = 1.0 mA, VCE = 10 V) (IC = 10 mA, VCE = 10 V) (IC = 30 mA, VCE = 10 V) (IC = 50 mA, VCE = 10 V) (IC = 100 mA, VCE = 10 V) Collector -Emitter Saturation Voltage (Note 3) (IC = 10 mA, IB = 1.0 mA) (IC = 20 mA, IB = 2.0 mA) (IC = 30 mA, IB = 3.0 mA) (IC = 50 mA, IB = 5.0 mA) VCE(sat) Base -Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) (IC = 20 mA, IB = 2.0 mA) (IC = 30 mA, IB = 3.0 mA) VBE(sat) Base -Emitter On Voltage (IC = 100 mA, VCE = 10 V) VBE(on) - V V V SMALL-SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product (IC = 10 mA, VCE = 20 V, f = 20 MHz) Collector-Base Capacitance (VCB = 20 V, f = 1.0 MHz) Ccb Emitter-Base Capacitance (VEB = 0.5 V, f = 1.0 MHz) Ceb 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. http://onsemi.com 2 MHz pF pF f, T CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) MMBT6517LT1G 200 TJ = 125C hFE , DC CURRENT GAIN VCE = 10 V 100 25C 70 50 -55C 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 100 70 50 TJ = 25C VCE = 20 V f = 20 MHz 30 20 10 1.0 Figure 1. DC Current Gain V, VOLTAGE (VOLTS) 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V IC + 10 IB 2.0 1.5 25C to 125C 1.0 0.5 RqVC for VCE(sat) 0 -55C to 25C -55C to 125C -1.5 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 RqVB for VBE -2.0 -2.5 1.0 70 100 Figure 3. "On" Voltages 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 4. Temperature Coefficients 1000 100 70 50 TJ = 25C IC, COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) 100 -1.0 0.2 Ceb 30 20 10 7.0 5.0 Ccb 3.0 2.0 1.0 0.2 50 70 2.5 -0.5 0.4 0 1.0 RV, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C 0.8 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 2. Current-Gain -- Bandwidth Product 1.4 1.2 2.0 1 ms 100 100 ms 10 ms 10 1.0 s 1 0.1 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 1 50 100 200 Figure 5. Capacitance 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 6. Safe Operating Area http://onsemi.com 3 1000 MMBT6517LT1G 1.0k 700 500 10k 7.0k 5.0k VCE(off) = 100 V IC/IB = 5.0 TJ = 25C td @ VBE(off) = 2.0 V 300 3.0k 2.0k t, TIME (ns) 200 t, TIME (ns) ts tr 100 70 50 1.0k 700 500 30 300 20 200 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 1.0 70 100 VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C tf 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 8. Turn-Off Time Figure 7. Turn-On Time +VCC VCC ADJUSTED FOR VCE(off) = 100 V +10.8 V 2.2 k 20 k 50 W SAMPLING SCOPE 1.0 k 50 1/2MSD7000 -9.2 V PULSE WIDTH 100 ms tr, tf 5.0 ns DUTY CYCLE 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES APPROXIMATELY -1.35 V (ADJUST FOR V(BE)off = 2.0 V) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Switching Time Test Circuit 1.0 0.7 0.5 0.3 D = 0.5 0.2 0.2 0.1 0.1 0.07 0.05 P(pk) RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) SINGLE PULSE ZqJC(t) = r(t) * RqJC ZqJA(t) = r(t) * RqJA 0.03 0.02 0.01 0.1 SINGLE PULSE 0.05 0.2 0.5 1.0 t1 t2 DUTY CYCLE, D = t1/t2 2.0 5.0 10 20 50 t, TIME (ms) 100 Figure 10. Thermal Response http://onsemi.com 4 200 500 1.0k 2.0k 5.0k 10k MMBT6517LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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