PESD5V0S1BL,315 - NXP - searchdatasheet.com

1. Product proﬁle

1.1 General description

Low capacitance ElectroStatic Discharge (ESD) protection diodes in ultra small SMD

plastic packages designed to protect one signal line from the damage caused by ESD and

other transients.

1.2 Features

1.3 Applications

1.4 Quick reference data

PESD5V0S1BA;PESD5V0S1BB;

PESD5V0S1BL

Low capacitance bidirectional ESD protection diodes

Rev. 04 — 20 August 2009 Product data sheet

Table 1. Product overview

Type number Package

NXP JEITA

PESD5V0S1BA SOD323 SC-76

PESD5V0S1BB SOD523 SC-79

PESD5V0S1BL SOD882 -

nBidirectional ESD protection of one line nESD protection > 30 kV

nMax. peak pulse power: PPP = 130 W nIEC 61000-4-2, level 4 (ESD)

nLow clamping voltage: V(CL)R = 14 V nIEC 61000-4-5 (surge); IPP = 12 A

nUltra low leakage current: IRM = 5 nA nUltra small SMD plastic packages

nCellular handsets and accessories nCommunication systems

nPortable electronics nAudio and video equipment

nComputers and peripherals

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse stand-off voltage - - 5 V

Cddiode capacitance VR = 0 V;

f = 1 MHz - 3545pF

Product data sheet Rev. 04 — 20 August 2009 2 of 15

NXP Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

2. Pinning information

3. Ordering information

4. Marking

Table 3. Pinning

Pin Description Simpliﬁed outline Symbol

SOD323, SOD523

1 cathode 1

2 cathode 2

SOD882

1 cathode 1

2 cathode 2

001aab540

sym045

Transparent

top view

sym045

Table 4. Ordering information

Type number Package

Name Description Version

PESD5V0S1BA SC-76 plastic surface mounted package; 2 leads SOD323

PESD5V0S1BB SC-79 plastic surface mounted package; 2 leads SOD523

PESD5V0S1BL - leadless ultra small plastic package; 2 terminals;

body 1.0 × 0.6 × 0.5 mm SOD882

Table 5. Marking codes

Type number Marking code

PESD5V0S1BA E6

PESD5V0S1BB L7

PESD5V0S1BL F1

Product data sheet Rev. 04 — 20 August 2009 3 of 15

NXP Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

5. Limiting values

[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see

Figure 1.

[2] Measured from pin 1 to pin 2.

[1] Measured from pin 1 to pin 2.

[2] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

PPP peak pulse power 8/20 µs[1][2] - 130 W

IPP peak pulse current 8/20 µs[1][2] -12A

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

Table 7. ESD maximum ratings

Symbol Parameter Conditions Min Max Unit

ESD electrostatic discharge

capability IEC 61000-4-2 (contact

discharge) [1][2] -30kV

HBM MIL-Std 883 - 10 kV

Table 8. ESD standards compliance

Standard Conditions

IEC 61000-4-2, level 4 (ESD); Figure 2 > 15 kV (air); > 8 kV (contact)

HBM MIL-STD 883; class 3 > 4 kV

Product data sheet Rev. 04 — 20 August 2009 4 of 15

NXP Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

Fig 1. 8/20 µs pulse waveform according to

IEC 61000-4-5 Fig 2. ElectroStatic Discharge (ESD) pulse waveform

according to IEC 61000-4-2

010

e−t

20 t (µs)

Ipp

(%)

120

mle218

100 % Ipp; 8 µs

50 % Ipp; 20 µs

001aaa191

Ipp

100 %

90 %

30 ns 60 ns

10 %

tr = 0.7 to 1 ns

Product data sheet Rev. 04 — 20 August 2009 5 of 15

NXP Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

6. Characteristics

[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see Figure 1.

[2] Measures from pin 1 to pin 2.

Table 9. Characteristics

amb

= 25

C unless otherwise speciﬁed

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VRWM reverse stand-off voltage - - 5 V

IRM reverse leakage current VRWM = 5 V;

see Figure 6 - 5 100 nA

V(CL)R clamping voltage IPP = 1 A [1][2] --10V

IPP = 12 A [1][2] --14V

V(BR) breakdown voltage IR = 1 mA 5.5 - 9.5 V

rdif differential resistance IR = 1 mA - - 50 Ω

Cddiode capacitance VR = 0 V; f = 1 MHz;

see Figure 5 - 3545pF

Product data sheet Rev. 04 — 20 August 2009 6 of 15

NXP Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

Tamb = 25 °C

Fig 3. Peak pulse power dissipation as a function of

exponential time duration tp; typical values Fig 4. Relative variation of peak pulse power as a

function of junction temperature; typical

values

Tamb = 25 °C; f = 1 MHz

Fig 5. Diode capacitance as a function of reverse

voltage; typical values Fig 6. Relative variation of reverse leakage current

as a function of junction temperature; typical

values

001aaa202

tp (µs)

110

103

10 102

102

103

Ppp

(W)

Tj (°C)

0 20015050 100

001aaa193

0.4

0.8

1.2

PPP

PPP(25°C)

VR (V)

054231

001aaa203

(pF)

001aaa204

Tj (°C)

75 150125100

102

10−1

IRM(Tj)

IRM(Tj=85°C)

Product data sheet Rev. 04 — 20 August 2009 7 of 15

NXP Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

Fig 7. ESD clamping test setup and waveforms

006aaa056

50 Ω

PESD5V0S1Bx

vertical scale = 200 V/div

horizontal scale = 50 ns/div

unclamped +1 kV ESD voltage waveform

(IEC61000-4-2 network) clamped +1 kV ESD voltage waveform

(IEC61000-4-2 network)

unclamped −1 kV ESD voltage waveform

(IEC61000-4-2 network) clamped −1 kV ESD voltage waveform

(IEC61000-4-2 network)

vertical scale = 10 V/div

horizontal scale = 50 ns/div

vertical scale = 200 V/div

horizontal scale = 50 ns/div vertical scale = 10 V/div

horizontal scale = 50 ns/div

GND

450 ΩRG 223/U

50 Ω coax

ESD TESTER 4 GHz DIGITAL

OSCILLOSCOPE

10×

ATTENUATOR

IEC 61000-4-2 network

CZ = 150 pF; RZ = 330 Ω

Product data sheet Rev. 04 — 20 August 2009 8 of 15

NXP Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

7. Application information

PESD5V0S1Bx series is designed for the protection of one bidirectional signal line from

the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The devices may

be used on lines where the signal polarities are above and below ground. They provide a

surge capability of up to 130 W per line for a 8/20 µs waveform.

Circuit board layout and protection device placement:

Circuit board layout is critical for the suppression of ESD, EFT and surge transients.

The following guidelines are recommended:

1. Place the protection device as close to the input terminal or connector as possible.

2. The path length between the protection device and the protected line should be

minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protection conductors in parallel with unprotected conductor.

5. Minimize all printed-circuit board conductive loops including power and ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer printed-circuit

boards, use ground vias.

Fig 8. Bidirectional protection of one signal line

006aaa057

PESD5V0S1Bx

GND

signal line

Product data sheet Rev. 04 — 20 August 2009 9 of 15

NXP Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

8. Package outline

Fig 9. Package outline SOD323 (SC-76)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOD323 SC-76

SOD323

03-12-17

06-03-16

Note

1. The marking bar indicates the cathode

UNIT A

mm 0.05

1.1

0.8 0.40

0.25 0.25

0.10 1.8

1.6 1.35

1.15 2.7

2.3 0.45

0.15

max

DIMENSIONS (mm are the original dimensions)

Plastic surface-mounted package; 2 leads

(1)

2 mm

scale

bpc D E HDQ

0.25

0.15

Lpv

0.2

detail X

A1c

HDvA

Product data sheet Rev. 04 — 20 August 2009 10 of 15

NXP Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

Fig 10. Package outline SOD523 (SC-79)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOD523 SC-79 02-12-13

06-03-16

Plastic surface-mounted package; 2 leads SOD523

0 0.5 1 mm

scale

Ebp

vMA

UNIT bpcDEv

DIMENSIONS (mm are the original dimensions)

Note

1. The marking bar indicates the cathode.

(1) 0.34

0.26 0.17

0.11 0.1

0.85

0.75

1.25

1.15

0.65

0.58 1.65

1.55

Product data sheet Rev. 04 — 20 August 2009 11 of 15

NXP Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

Fig 11. Package outline SOD882

UNIT A1

max.

A(1) be

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.50

0.46 0.55

0.47

0.03 0.62

0.55 0.65

DIMENSIONS (mm are the original dimensions)

Notes

1. Including plating thickness

2. The marking bar indicates the cathode

0.30

0.22

SOD882 03-04-16

03-04-17

1.02

0.95

(2)

Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm SOD882

0 0.5 1 mm

scale

Product data sheet Rev. 04 — 20 August 2009 12 of 15

NXP Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

9. Packing information

[1] For further information and the availability of packing methods, see Section 12.

Table 10. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 10000

PESD5V0S1BA SOD323 4 mm pitch, 8 mm tape and reel -115 -135

PESD5V0S1BB SOD523 4 mm pitch, 8 mm tape and reel -115 -135

PESD5V0S1BL SOD882 4 mm pitch, 8 mm tape and reel - -315

Product data sheet Rev. 04 — 20 August 2009 13 of 15

NXP Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

10. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PESD5V0S1BA_BB_BL_4 20090820 Product data sheet - PESD5V0S1BA_BB_BL_3

Modiﬁcations: •This data sheet was changed to reﬂect the new company name NXP Semiconductors,

including new legal deﬁnitions and disclaimers. No changes were made to the technical

content.

•Table 3 “Pinning”: amended

•Figure 9 “Package outline SOD323 (SC-76)”: updated

•Figure 10 “Package outline SOD523 (SC-79)”: updated

PESD5V0S1BA_BB_BL_3 20041217 Product data sheet - PESD5V0S1BA_BB_BL_2

PESD5V0S1BA_BB_BL_2 20040802 Product data sheet - PESD5V0S1BA_1

PESD5V0S1BB_1

PESD5V0S1BA_1 20040322 Product speciﬁcation - -

PESD5V0S1BB_1 20040304 Product speciﬁcation - -

Product data sheet Rev. 04 — 20 August 2009 14 of 15

NXP Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

11. Legal information

11.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

11.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

11.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

11.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

12. Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 20 August 2009

Document identifier: PESD5V0S1BA_BB_BL_4

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

13. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Application information. . . . . . . . . . . . . . . . . . . 8

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Packing information. . . . . . . . . . . . . . . . . . . . . 12

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

11.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

12 Contact information. . . . . . . . . . . . . . . . . . . . . 14

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15