SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit: mm Ron = 410 m (max) (@VGS = 4V) Ron = 200 m (max) (@VGS = 10V) 2.10.1 Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS 20 V DC ID 1.5 Pulse IDP 3.0 PD (Note 1) 800 PD (Note 2) 500 Drain current Drain power dissipation 1 3 2 A 0.70.05 Characteristic 2.00.1 Absolute Maximum Ratings (Ta = 25C) +0.1 0.3 -0.05 1.70.1 0.1660.05 4 V drive Low ON-resistance: 0.650.05 * * mW Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C 1: Gate 2: Source 3: Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. 2 (25.4 mm x 25.4 mm x 0.8 t, Cu Pad: 645 mm ) Note 2: Mounted on an FR4 board. 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm ) UFM JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-source breakdown voltage Symbol V (BR) DSS Test Condition Min Typ. Max Unit ID = 1 mA, VGS = 0 20 V Drain cutoff current IDSS VDS = 20 V, VGS = 0 1 A Gate leakage current IGSS VGS = 20 V, VDS = 0 1 A Vth VDS = 5 V, ID = 0.1 mA 1.1 2.3 V S Gate threshold voltage Forward transfer admittance Yfs Drain-source ON-resistance RDS (ON) Input capacitance Ciss VDS = 5 V, ID = 0.6 A (Note 3) 0.68 1.36 ID = 0.6 A, VGS = 10 V (Note 3) 135 200 ID = 0.6 A, VGS = 4 V (Note 3) 250 410 60 pF VDS = 10 V, VGS = 0, f = 1 MHz m Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz 47 pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz 17 pF Switching time Turn-on time ton VDD = 10 V, ID = 0.6 A, 19 Turn-off time toff VGS = 0 to 4 V, RG = 10 10 - 0.9 - 1.2 Drain-source forward voltage VDSF ID = - 1.5 A, VGS = 0 V (Note 3) ns V Note 3: Pulse test 1 http://store.iiic.cc/ 2007-11-01 SSM3K107TU Switching Time Test Circuit (a) Test Circuit (b) VIN 4V OUT 4 V 90% IN 0V RG 0 10 s (c) VOUT VDD VDD = 10 V RG = 10 D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25C Marking 10% VDD VDS (ON) 10% 90% tr ton tf toff Equivalent Circuit (top view) 3 3 KK7 1 2 1 2 Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 0.1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 http://store.iiic.cc/ 2007-11-01 SSM3K107TU ID - VDS 3.0 6V (A) 2.0 3.7V ID 1.5 VGS = 3.3V 1.0 0.5 0.1 Ta = 100 C 0 0.2 0.4 0.6 Drain-source voltage VDS -25 C 0.001 0.0001 0 1 0.8 25 C 0.01 Common Source Ta = 25C 0 VDS = 5 V 1 Drain current 4V Drain current (A) Common Source 2.5 ID 10 V ID - VGS 10 0.5 (V) 1.0 3.5 VGS (V) 4.0 600 ID = 0.6 A Common Source Common Source 500 Drain-source ON-resistance RDS (ON) (m) Drain-source ON-resistance RDS (ON) (m) 3.0 RDS (ON) - ID RDS (ON) - VGS 400 300 Ta =100 C 25 C 200 100 -25 C 0 2 4 6 Gate-source voltage 8 VGS 500 Ta = 25C 400 300 VGS = 4.0 200 10V 100 0 10 0 1 2 (V) RDS (ON) - Ta 4 ID 5 (A) Vth - Ta 2.0 Vth (V) Common Source Gate threshold voltage 400 300 3 Drain current 500 Drain-source on-resistance RDS (ON) (m) 2.5 Gate-source voltage 600 0 2.0 1.5 ID = 0.6A / VGS = 4.0 V 200 0.6 A / 10V 100 1.5 1.0 0.5 Common source VDS = 5 V ID = 0.1 mA 0 -50 0 50 Ambient temperature 100 Ta 0 -50 150 (C) 0 50 Ambient temperature 3 http://store.iiic.cc/ 100 Ta 150 (C) 2007-11-01 SSM3K107TU IDR - VDS 10 Common Source (A) Common Source VDS = 5 V 3 VGS = 0 V 1 1 0.3 0.1 0.01 1 0.1 Drain current ID IDR G 0.1 S 0.01 0.001 0.0001 0 10 D Ta = 25C IDR Ta = 25C Drain reverse current Forward transfer admittance Yfs (S) |Yfs| - ID 10 (A) -0.2 -0.4 -0.6 -0.8 Drain-source voltage -1.0 VDS -1.2 (V) t - ID C - VDS 1000 600 Common Source toff 100 t tf Switching time Capacitance C (pF) 300 (ns) Ta = 25C f = 1 MHz VGS = 0 V 500 100 Ciss 50 Coss 30 10 ton Common Source VDD = 10 V VGS = 0 to 4 V Ta = 25C RG = 10 tr Crss 10 0.1 1 10 Drain-source voltage 1 0.01 100 VDS 0.1 Drain current (V) ID (A) 600 (V) Transient thermal impedance Rth (C/W) 10 VGS 10 t - ID Dynamic Input Characteristic Gate-Source voltage 1 8 c b a 100 VDD = 16 V 6 4 2 0 10 a: Mounted on a ceramic board Common Source ID = 1.2 A Ta = 25 C 0 1 2 Total gate charge 3 Qg (25.4 x 25.4 x 0.8 mm 2 Cu Pad : 645 mm ) b: Mounted on an FR4 board 2 (25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm ) c: Mounted on an FR4 board 2 (25.4 x 25.4 x 1.6 mm Cu Pad : 0.36 mm x 3) 1 0.001 4 (nC) 0.01 0.1 1 Pulse Width 4 http://store.iiic.cc/ 10 100 600 tw (s) 2007-11-01 SSM3K107TU PD - Ta 1000 Drain Power Dissipation 2 (25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm ) (25.4 x 25.4 x 0.8 mm Cu Pad : 645 mm ) b: Mounted on a ceramic board 800 PD (mW) a: Mounted on an FR4 board 2 b 600 a 400 200 0 -40 -20 0 20 40 60 80 Ambient temperature 100 120 140 160 Ta (C) 5 http://store.iiic.cc/ 2007-11-01 SSM3K107TU RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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