BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
 
1
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Designed for Complementary Use with the
BD244 Series
65 W at 25°C Case Temperature
6 A Continuous Collector Current
10 A Peak Collector Current
Customer-Specified Selections Available
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 ,
VBE(off) = 0, RS = 0.1, VCC = 20 V.
RATING SYMBOL VALUE UNIT
Collector-emitter voltage (RBE = 100)
BD243
BD243A
BD243B
BD243C
VCER
55
70
90
115
V
Collector-emitter voltage (IC = 30 mA)
BD243
BD243A
BD243B
BD243C
VCEO
45
60
80
100
V
Emitter-base voltage VEBO 5V
Continuous collector current IC6A
Peak collector current (see Note 1) ICM 10 A
Continuous base current IB3A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 65 W
Continuous device dissipation at (or below) 2C free air temperature (see Note 3) Ptot 2W
Unclamped inductive load energy (see Note 4) ½LIC262.5 mJ
Operating junction temperature range Tj-65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL250 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
2
 
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 2C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage IC = 30 mA
(see Note 5)
IB = 0
BD243
BD243A
BD243B
BD243C
45
60
80
100
V
ICES
Collector-emitter
cut-off current
VCE = 55 V
VCE = 70 V
VCE = 90 V
VCE =115 V
VBE =0
VBE =0
VBE =0
VBE =0
BD243
BD243A
BD243B
BD243C
0.4
0.4
0.4
0.4
mA
ICEO
Collector cut-off
current
VCE = 30 V
VCE = 60 V
IB=0
IB=0
BD243/243A
BD243B/243C
0.7
0.7 mA
IEBO
Emitter cut-off
current VEB = 5 V IC=0 1 mA
hFE
Forward current
transfer ratio
VCE = 4 V
VCE = 4 V
IC= 0.3 A
IC= 3A (see Notes 5 and 6) 30
15
VCE(sat)
Collector-emitter
saturation voltage IB = 1 A IC= 6 A (see Notes 5 and 6) 1.5 V
VBE
Base-emitter
voltage VCE = 4 V IC= 6 A (see Notes 5 and 6) 2 V
hfe
Small signal forward
current transfer ratio VCE = 10 V IC= 0.5 A f = 1 kHz 20
|hfe|Small signal forward
current transfer ratio VCE = 10 V IC= 0.5 A f = 1 MHz 3
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1.92 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ton Tu r n -o n t i m e I C = 1 A
VBE(off) = -3.7 V
IB(on) = 0.1 A
RL = 20
IB(off) = -0.1 A
tp = 20 µs, dc 2%
0.3 µs
toff Turn-off time s
BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
3
 
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·1 0 10
hFE - DC Current Gain
1·0
10
100
1000 TCS633AH
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IB - Base Current - A
0·001 0·01 0·1 1·0 10
VCE(sat) - Collector-Emitter Saturation Voltage - V
0·01
0·1
1·0
10 TCS633AE
IC = 300 mA
IC = 1 A
IC = 3 A
IC = 6 A
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·1 0 10
VBE - Base-Emitter Voltage - V
0·6
0·7
0·8
0·9
1·0
1·1
1·2 TCS633AF
VCE = 4 V
TC = 25°C
BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
4
 
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
1·0 10 100 1000
IC - Collector Current - A
0·01
0·1
1·0
10
100 SAS633AD
BD243
BD243A
BD243B
BD243C
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
0 255075100125150
Ptot - Maximum Power Dissipation - W
0
10
20
30
40
50
60
70
80 TIS633AB
BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
5
 
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
ø1,23
1,32
4,20
4,70
123
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2 VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE