MMBT4403-G (PNP)
RoHS Device
General Purpose Transistors
QW-BTR33 Page 1
REV:A
Features
-Switching transistor.
Marking: 2T
Dimensions in inches and (millimeter)
Symbol
Parameter Value Unit
O
Maximum Ratings (at Ta=25 C unless otherwise noted)
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current-continuous
Collector power dissipation
Junction temperature
Storage temperature range
SMD Diodes Specialist
COMCHIP
SOT-23
3
1 2
0.119(3.00)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.083(2.10)
0.066(1.70)
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
0.006(0.15)
0.002(0.05)
0.103(2.60)
0.086(2.20)
0.006(0.15) max
0.007(0.20) min
Symbol
Parameter Conditions Min
Max
Unit
O
Electrical Characteristics (at Ta=25 C unless otherwise noted)
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
-40
-40
-5
100
200
-0.1
-0.1
-0.1
300
-0.4
-0.95
V
V
V
μA
V
V
ΜΗz
μA
μA
Typ.
V(BR)CBO
V(BR)CEO
ICBO
ICEO
IEBO
hFE
VCE(SAT)
VBE(SAT)
V(BR)EBO
fT
IC=-100μA, IE=0
IC=-1mA, IB=0
IE=-100μA, IC=0
VCB=-35V, IE=0
VCE=-35V, IB=0
VEB=-4V, IC=0
VCE=-2V, IC=-150mA
IC=-150mA, IB=-15mA
IC=-150mA, IB=-15mA
VCE=-10V, IC=-20mA
f=100MHz
1
Base
2
Emitter
Collector
3
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
-40
-40
-5
-0.6
300
150
-55 to +150
V
V
V
A
mW
OC
OC
Comchip Technology CO., LTD.
RATING AND CHARACTERISTIC CURVES (MMBT4403-G)
Page 2
QW-BTR33
SMD Diodes Specialist
COMCHIP
REV:A
General Purpose Transistors
Comchip Technology CO., LTD.
Fig.1 Max. Power Dissipation vs.
Ambient Temperature
0 200
O
TA, Ambient Temperature ( C)
PD, Power Dissipation (mW)
Fig. 3 Typical Capacitance
-0.1 -1.0 -10 -50
1
10
VR, Reverse Voltage (V)
CT, Capacitance (pF)
Fig. 4 Typical Collector Saturation Region
0.001 1 100
0
IB, Base Current (mA)
VCE, Collector-Emitter Voltage (V)
0.4
0
200
300
0.10.01
50 125
100
30
Fig. 5 Collector-Emitter Saturation
Voltage vs. Collector Current
1 1000
0
IC, Collector Current (mA)
VCE(SAT), Collector-Emitter Saturation
Voltage (V)
0.1
0.5
10010
1.2
25 75 100 175
10
Fig. 2 Typical DC Current Gain vs.
Collector Current
1 10 1000
1
100
1000
IC, Collector Current (mA)
hFE, DC Current Gain
50
150
250
150 100
10
0.8
1.6
0.2
0.3
0.4
IC/IB=10
O
TA=150 C
O
TA=25 C
O
TA=-50 C
Fig. 6 Base-Emitter Voltage vs.
Collector Current
0.1
0.2
IC, Collector Current (mA)
VBE(ON), Base-Emitter Voltage (V)
1 10 100
0.4
0.6
0.8
1.0
O
TA=125 C
O
TA=25 C
O
TA=-50 C
VCE=5.0V
Cibo
Cobo
IC=300mA
IC=100mA
IC=30mA
IC=10mA
IC=1mA
O
TA=150 C
O
TA=25 C
O
TA=-50 C
VCE=5V
