© Semiconductor Components Industries, LLC, 2010
May, 2010 − Rev. 1
1Publication Order Number:
NTR4171P/D
NTR4171P
Power MOSFET
−30 V, −3.5 A, Single P−Channel, SOT−23
Features
•Low RDS(on) at Low Gate Voltage
•Low Threshold Voltage
•High Power and Current Handling Capability
•This is a Pb−Free Device
Applications
•Load Switch
•Optimized for Battery and Load Management Applications in
Portable Equipment like Cell Phones, PDA’s, Media Players, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS −30 V
Gate−to−Source Voltage VGS ±12 V
Continuous Drain
Current (Note 1) Steady
State
TA = 25°C
ID
−2.2
A
TA = 85°C−1.5
t ≤ 5 s TA = 25°C−3.5
Power Dissipation
(Note 1)
Steady
State TA = 25°C PD
0.48
W
t ≤ 5 s 1.25
Pulsed Drain Current tp =10 msIDM −15.0 A
Operating Junction and Storage Temperature TJ,
Tstg
−55 to
150 °C
Source Current (Body Diode) IS−1.0 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1) RqJA 260 °C/W
Junction−to−Ambient − t ≤ 10 s (Note 1) RqJA 100
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
G
S
D
Device Package Shipping†
ORDERING INFORMATION
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−30 V 110 mW @ −4.5 V
75 mW @ −10 V
RDS(on) MAX
−2.2 A
ID MAXV(BR)DSS
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
2
3
1
3
Drain
1
Gate
2
Source
P−CHANNEL MOSFET
NTR4171PT1G SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
150 mW @ −2.5 V
TRFMG
G
TRF = Specific Device Code
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
−1.8 A
−1.0 A
NTR4171PT3G SOT−23
(Pb−Free)
10000/Tape & Reel
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MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA−30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
/TJ
ID = −250 mA, Reference to 25°C24 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −24 V, TJ = 25°C
VGS = 0 V, VDS = −24 V, TJ = 85°C
−1.0
−5.0
mA
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "12 V ±0.1 mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA−0.7 −1.15 −1.4 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ3.5 mV/°C
Drain−to−Source On−Resistance RDS(on) VGS = −10 V, ID = −2.2 A 50 75 mW
VGS = −4.5 V, ID = −1.8 A 60 110
VGS = −2.5 V, ID = −1.0 A 90 150
Forward Transconductance gFS VDS = −5.0 V, ID = −2.2 A 7.0 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance Ciss
VGS = 0 V, f = 1.0 MHz,
VDS = −15 V
720 pF
Output Capacitance Coss 95
Reverse Transfer Capacitance Crss 65
Total Gate Charge QG(TOT)
VGS = −10 V, VDS = −15 V,
ID = −3.5 A
15.6 nC
Threshold Gate Charge QG(TH) 0.7
Gate−to−Source Charge QGS 1.6
Gate−to−Drain Charge QGD 2.6
Total Gate Charge QG(TOT)
VGS = −4.5 V, VDS = −15 V,
ID = −3.5 A
7.4 nC
Threshold Gate Charge QG(TH) 0.7
Gate−to−Source Charge QGS 1.6
Gate−to−Drain Charge QGD 2.6
Gate Resistance RG6.1 W
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time td(on)
VGS = −10 V, VDS = −15 V,
ID = −3.5 A, RG = 6 W
8.0 ns
Rise Time tr11
Turn−Off Delay Time td(off) 32
Fall Time tf14
Turn−On Delay Time td(on)
VGS = −4.5 V, VDS = −15 V,
ID = −3.5 A, RG = 6 W
9.0 ns
Rise Time tr16
Turn−Off Delay Time td(off) 25
Fall Time tf22
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, IS = −1.0 A, TJ = 25°C−0.8 −1.2 V
Reverse Recovery Time tRR
VGS = 0 V, IS = −1.0 A,
dISD/dt = 100 A/ms
14 ns
Charge Time ta10
Discharge Time tb4.0
Reverse Recovery Charge QRR 8.0 nC
2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
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TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
−VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V)
5.04.53.02.01.51.00.50
0
1.0
2.0
4.0
6.0
7.0
8.0
10
3.02.52.252.01.751.51.251.0
0
1.0
2.0
3.0
6.0
7.0
8.0
10
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−VGS, GATE VOLTAGE (V) −ID, DRAIN CURRENT (A)
9.08.06.05.04.03.02.01.0
0
0.05
0.10
0.15
0.20
0.25
0.30
9.07.06.04.03.02.01.00
0
0.05
0.10
0.15
0.20
0.25
0.30
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.6
0.7
0.8
0.9
1.0
1.3
1.4
1.6
30252015105.00
10
100
1000
10,000
−ID, DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)RDS(on), NORMALIZED DRAIN−TO−SOURCE RESISTANCE (W)
IDSS, LEAKAGE (nA)
2.5 4.03.5
3.0
5.0
9.0
VGS = −2.0 V
−2.2 V
−2.5 V
−10 V
−4.5 V
2.75
4.0
5.0
9.0 VDS = −5 V
TJ = 25°C
TJ = 125°C
TJ = −55°C
7.0 10
TJ = 25°C
ID = −2.2 A
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
5.0 8.0 10
TJ = 25°C
VGS = −10 V
−2.2 V
−2.5 V
−4.5 V
−2.0 V
150
VGS = −4.5 V
ID = −2.2 A
1.1
1.2
1.5
TJ = 125°C
TJ = 150°C
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TYPICAL CHARACTERISTICS
QGS
−VDS
QT
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
−VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
30252015105.00
0
100
300
500
600
900
1000
1100
1412108.06.04.02.00
0
2.0
4.0
6.0
8.0
10
12
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100101.0
1.0
10
100
1000
1.10.90.80.70.60.50.40.3
0.1
1.0
10
Figure 11. Threshold Voltage Figure 12. Single Pulse Maximum Power
Dissipation
TJ, TEMPERATURE (°C) SINGLE PULSE TIME (s)
1251007550250−25−50
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.5
1000100101.00.10.010.001
0
5.0
10
15
20
25
30
C, CAPACITANCE (pF)
−VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
−IS, SOURCE CURRENT (A)
−VGS(th) (V)
POWER (W)
800
700
400
200
Ciss
Coss
Crss
VGS = 0 V
TJ = 25°C
f = 1 MHz
16
VDS = −15 V
TJ = 25°C
ID = −3.5 A
0
2.0
4.0
6.0
8.0
10
12
14
16
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−VGS
QGD
VGS = −10 V
VDD = −15 V
ID = −3.5 A
td(off)
td(on)
tf
tr
1.0 1.2
TJ = 25°C
TJ = 125°C
TJ = −55°C
TJ = 150°C
150
ID = −250 mA
1.1
1.3
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TYPICAL CHARACTERISTICS
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
Figure 14. FET Thermal Response
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
t, TIME (s)
100101.00.1
0.01
0.1
1.0
10
100
1.00.1 10 1000.010.0010.0001
0.01
0.1
1.0
−ID, DRAIN CURRENT (A)
R(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE (NORMALIZED)
VGS = −12 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
10 ms
100 ms
1 ms
10 ms
dc
1000
Duty Cycle = 0.5
Single Pulse
0.2
0.1
0.05
0.02
0.01
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PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q°°°°
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NTR4171P/D
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