FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier
© 1998 Semiconductor Components Industries, LLC. www.onsemi.com
FFB2222A / FMB2222A / MMPQ2222A Rev. 2
December 2017
FFB2222A / FMB2222A / MMPQ2222A
NPN Multi-Chip General-Purpose Amplifier
Block Diagram
Figure 1. FFB2222A Device Package Figure 2. FFB2222A Internal Conne ctio n
Figure 3. FMB2222A Device Package Figure 4. FMB2222A Internal Connection
Figure 5. MMPQ2222A Device Package Figure 6. MMPQ2222A Internal Connection
C1
B2
E2
E1
B1
C2
pin #1
SC70-6
Mark: .1P
E2
B2
C1
C2
B1
E1
SuperSOT™-6
Mark: .1P
Dot denotes pin #1
C1
E1
C2
B1
E2
B2
pin #1
C2
E1
C1
B2
E2
B1
SOIC-16
Mark:
MMPQ2222A
C1C1C2C2C3C3C4
C4
E1 B1 E2 B2E3 B3E4 B4
pin #1
B4E4B3E3B2E2B1E1
C4C4C3C3C2C2C1C1
Description
This device is for use as a medium power amplifier and
switch requiring collector currents up to 500 mA. Sourced
from process 19.
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier tape
can be of either orientation ( 0 deg and 180 deg) and will not affect the functionality of the device.
FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier
© 1998 Semiconductor Components Industries, LLC. www.onsemi.com
FFB2222A / FMB2222A / MMPQ2222A Rev. 22
Ordering Information
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Note:
1. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. Fairchild
Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations.
Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Part Number Top Mark Package Packing Method
FFB2222A .1P SC70 6L Tape and Reel
FMB2222A .1P SSOT 6L Tape and Reel
MMPQ2222A MMPQ2222A SOIC 16L Tape and Reel
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 45 V
VCBO Collector-Base Voltage 75 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Current - Continuous 500 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Parameter Max. Unit
FFB2222A FMB2222A MMPQ2222A
PD
Total Device Dissipation 300 700 1,000 mW
Derate Above 25°C 2.4 5.6 8.0 mW/°C
RθJA
Thermal Resistance, Junction-to-Ambient 415 180
°C/W
Thermal Resistance, Junction-to-Ambient,
Effective 4 Dies 125
Thermal Resistance, Junction-to-Ambient,
Each Die 240
FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier
© 1998 Semiconductor Components Industries, LLC. www.onsemi.com
FFB2222A / FMB2222A / MMPQ2222A Rev. 23
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Symbol Parameter Conditions Min. Typ. Max. Unit
V(BR)CEO Collector-Emitter Breakdown Voltage(3) I
C = 10 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 75 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 5.0 V
ICBO Collector Cut-Off Current VCB = 60 V, IE = 0 10 nA
IEBO Emitter Cut-Off Current VEB = 3.0 V, IC = 0 10 nA
hFE DC Current Gain
IC = 0.1 mA, VCE = 10 V 35
IC = 1.0 mA, VCE = 10 V 50
IC = 10 mA, VCE = 10 V 75
IC = 150 mA, VCE = 10 V(3) 100 300
IC = 150 mA, VCE = 1.0 V(3) 50
IC = 500 mA, VCE = 10 V(3) 40
VCE(sat) Collector-Emitter Saturation Voltage(3) IC = 150 mA, IB = 15 mA 0.3 V
IC = 500 mA, IB = 50 mA 1.0
VBE(sat) Base-Emitter Saturation Voltage(3) IC = 150 mA, IB = 15 mA 1.2 V
IC = 500 mA, IB = 50 mA 2.0
fTCurrent Gain - Bandwidth Product IC = 20 mA, VCE = 20 V,
f = 100 MHz 300 MHz
Cobo Output Capacitance VCB = 10 V, IE = 0,
f = 100 kHz 4.0 pF
Cibo Input Capacitance VEB = 0.5 V, IC = 0,
f = 100 kHz 20 pF
NF Noise Figure IC = 100 μA, VCE = 10 V,
RS = 1.0 kΩ, f = 1.0 kHz 2.0 dB
tdDelay Time VCC = 30 V, VBE(OFF) = 0.5 V,
IC = 150 mA, IB1 = 15 mA
8ns
trRise Time 20 ns
tsStorage Time VCC = 30 V, IC = 150 mA,
IB1 = IB2 = 15 mA
180 ns
tfFall Time 40 ns
FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 4
Typical Performance Characteristics
Figure 7. Typical Pulsed Current Gain vs.
Collector Current Figure 8. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 9. Base-Emitter Saturation Voltage vs.
Collector Current Figure 10. Base-Emitter On Voltage vs.
Collector Current
Figure 11. Collector Cut-Off Current vs.
Ambient Temperature Figure 12. Emitter Transition and Output
Capacitance vs. Reverse Bias Voltage
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
1 10 100 500
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CE S AT
25 °C
C
β= 10
125 °C
- 40 °C
1 10 100 500
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER VOLTAGE (V)
BESAT
C
β= 10
25 °C
125 °C
- 40 °C
0.1 1 10 25
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE (ON )
C
V = 5V
CE
25 °C
125 °C
- 40 °C
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 40V
CB
CBO
°
0.1 1 10 100
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
f = 1 MHz
Cob
C
te
FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 5
Typical Performance Characteristics (Continued)
Figure 13. Turn-On and Turn-Off Times vs.
Collector Current Figure 14. Switching Time vs. Collector Current
Figure 15. Power Dissipation vs.
Ambient Temperature Figure 16. Common Emitter Characteristics
Figure 17. Common Emitter Characteristics Figure 18. Common Emitter Characteristics
10 100 1000
0
80
160
240
320
400
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
ton
t
off
B1
C
B2
Ic
10
V = 25 V
cc
10 100 1000
0
80
160
240
320
400
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
tr
t
s
B1
C
B2
Ic
10
V = 25 V
cc
tf
td
0 25 50 75 100 125 150
0
0. 2 5
0.5
0. 7 5
1
TEMPERATURE ( C)
P - PO WE R D IS SI PAT IO N (W)
°
D
SOIC-16
SOT-6
SC70-6
0 102030405060
0
2
4
6
8
I - COLLECTOR CURRENT (mA)
CHAR. RELATIVE TO VALUES AT I = 10mA
V = 10 V
CE
C
C
T = 25 C
A o
hoe
hre
hfe
hie
0 20406080100
0
0.4
0.8
1.2
1.6
2
2.4
T - AMBIENT TEMPERATURE ( C)
CHAR. RELATIVE TO VALUES AT T = 25 C
V = 10 V
CE
A
A
I = 10 mA
C
hoe
hre
hfe
hie
o
o
0 5 10 15 20 25 30 35
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
1.25
1.3
V - COLLECTOR VOLTAGE (V)
CHAR. RELATIVE TO VALUES AT V = 10V
CE
CE
T = 25 C
A o
hoe
hre
hfe
h ie
I = 10 mA
C
FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.onsemi.com
FFB2222A / FMB2222A / MMPQ2222A Rev. 26
Test Circuits
Figure 19. Saturated Turn-On Switching Time
Figure 20. Saturated Turn-Off Switching Time
30 V
1.0 KΩΩ
ΩΩ
Ω
16 V
0
≤≤
≤≤
≤ 200ns 500 ΩΩ
ΩΩ
Ω
200 ΩΩ
ΩΩ
Ω
≤≤
≤≤
≤ 200ns
50 ΩΩ
ΩΩ
Ω
37 ΩΩ
ΩΩ
Ω
- 1.5 V
1.0 KΩΩ
ΩΩ
Ω
6.0 V
0
30 V
1k
FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
www.onsemi.com
7
Physical Dimensions
Figure 25. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE (ACTIVE)
SCALE: 60X
B
1.90
2.00
±0.20
0.50 MIN
1.00
0.80
1.10
0.80
0.10 C
0.25
0.10
0.46
0.26
0.20
GAGE
PLANE (R0.10)
30°
0°
SEATING
PLANE
C0.10
0.00
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC-88, 1996.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH.
D) DRAWING FILENAME: MKT-MAA06AREV6
2.10±0.30
0.10 A B
0.65
1.30
(0.25) 0.30
0.15
1
1.25
±0.10
3
1.30
0.40 MIN
SEE DETAIL A
LAND PATTERN RECOMMENDATION
6
A
4
C
0.65
L
SYMM
PIN ONE
SC70 6L
FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
www.onsemi.com
8
Physical Dimensions (Continued)
Figure 26. 6-LEAD, SUPERSOT-6, JEDEC MO-193, 1.6 MM WIDE (ACTIVE)
SSOT 6L
FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
www.onsemi.com
9
Physical Dimensions (Continued)
Figure 27. 16-LEAD, SOIC, JEDEC MS-012, 0.150 inch, NARROW BODY (ACTIVE)
X 45°
DETAIL A
SCALE: 2:1
8°
0°
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO JEDEC
MS-012, VARIATION AC, ISSUE C.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH AND TIE BAR PROTRUSIONS
D) CONFORMS TO ASME Y14.5M-1994
E) LANDPATTERN STANDARD: SOIC127P600X175-16AM
F) DRAWING FILE NAME: M16AREV12.
SEATING PLANE
GAGE PLANE
C
C0.10
SEE DETAIL A
LAND PATTERN RECOMMENDATION
PIN ONE
INDICATOR
1
16
8
M
0.25
9
CBA
B
A
5.6
1.27 0.65
1.75
10.00
9.80
8.89
6.00
1.27
(0.30)
0.51
0.35
1.75 MAX
1.50
1.25
0.25
0.10
0.25
0.19
(1.04)
0.90
0.50
0.36
(R0.10)
(R0.10)
0.50
0.25
4.00
3.80
SO 16L NB
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