FFB2222A / FMB2222A / MMPQ2222A NPN Multi-Chip General-Purpose Amplifier Description This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from process 19. Block Diagram E2 C2 B2 B1 C1 E1 E2 B2 C1 C2 B1 Mark: .1P pin #1 E1 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier tape can be of either orientation ( 0 deg and 180 deg) and will not affect the functionality of the device. SC70-6 Figure 1. FFB2222A Device Package Figure 2. FFB2222A Internal Connection C2 E1 C2 B2 E1 E2 C1 B1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .1P Dot denotes pin #1 Figure 3. FMB2222A Device Package E1 B1 E2 B2 E3 B3 E4 SOIC-16 Mark: MMPQ2222A pin #1 C1 B4 C2 C1 C3 C2 E1 B1 E2 B2 E3 B3 E4 B4 C1 C1 C2 C2 C3 C3 C4 C4 C4 C4 C3 Figure 5. MMPQ2222A Device Package (c) 1998 Semiconductor Components Industries, LLC. FFB2222A / FMB2222A / MMPQ2222A Rev. 2 Figure 4. FMB2222A Internal Connection Figure 6. MMPQ2222A Internal Connection www.onsemi.com FFB2222A / FMB2222A / MMPQ2222A -- NPN Multi-Chip General-Purpose Amplifier December 2017 Part Number Top Mark Package Packing Method FFB2222A .1P SC70 6L Tape and Reel FMB2222A .1P SSOT 6L Tape and Reel MMPQ2222A MMPQ2222A SOIC 16L Tape and Reel Absolute Maximum Ratings(1) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit 45 V VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 5.0 V Collector Current - Continuous 500 mA -55 to +150 C IC TJ, TSTG Operating and Storage Junction Temperature Range Note: 1. These ratings are based on a maximum junction temperature of 150C. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. Thermal Characteristics(2) Values are at TA = 25C unless otherwise noted. Symbol PD RJA Max. Parameter FFB2222A FMB2222A MMPQ2222A Unit Total Device Dissipation 300 700 1,000 mW Derate Above 25C 2.4 5.6 8.0 mW/C Thermal Resistance, Junction-to-Ambient 415 180 Thermal Resistance, Junction-to-Ambient, Effective 4 Dies 125 Thermal Resistance, Junction-to-Ambient, Each Die 240 C/W Note: 2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. (c) 1998 Semiconductor Components Industries, LLC. FFB2222A / FMB2222A / MMPQ2222A Rev. 2 www.onsemi.com 2 FFB2222A / FMB2222A / MMPQ2222A -- NPN Multi-Chip General-Purpose Amplifier Ordering Information Values are at TA = 25C unless otherwise noted. Symbol Parameter V(BR)CEO Collector-Emitter Breakdown Voltage(3) V(BR)CBO Collector-Base Breakdown Voltage Conditions Min. Typ. Max. Unit IC = 10 mA, IB = 0 40 V IC = 10 A, IE = 0 75 V 5.0 Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 ICBO Collector Cut-Off Current VCB = 60 V, IE = 0 10 nA IEBO Emitter Cut-Off Current VEB = 3.0 V, IC = 0 10 nA V(BR)EBO hFE DC Current Gain IC = 0.1 mA, VCE = 10 V 35 IC = 1.0 mA, VCE = 10 V 50 IC = 10 mA, VCE = 10 V 75 V(3) 100 IC = 150 mA, VCE = 1.0 V(3) 50 IC = 500 mA, VCE = 10 V(3) 40 IC = 150 mA, VCE = 10 V 300 IC = 150 mA, IB = 15 mA 0.3 IC = 500 mA, IB = 50 mA 1.0 IC = 150 mA, IB = 15 mA 1.2 IC = 500 mA, IB = 50 mA 2.0 VCE(sat) Collector-Emitter Saturation Voltage(3) VBE(sat) Base-Emitter Saturation Voltage(3) fT Current Gain - Bandwidth Product IC = 20 mA, VCE = 20 V, f = 100 MHz 300 MHz Cobo Output Capacitance VCB = 10 V, IE = 0, f = 100 kHz 4.0 pF Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 20 pF NF Noise Figure IC = 100 A, VCE = 10 V, RS = 1.0 k, f = 1.0 kHz 2.0 dB td Delay Time tr Rise Time ts Storage Time tf Fall Time VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA V V 8 ns 20 ns 180 ns 40 ns Note: 3. Pulse test: pulse width 300 s, duty cycle 2.0%. (c) 1998 Semiconductor Components Industries, LLC. FFB2222A / FMB2222A / MMPQ2222A Rev. 2 www.onsemi.com 3 FFB2222A / FMB2222A / MMPQ2222A -- NPN Multi-Chip General-Purpose Amplifier Electrical Characteristics V CESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 500 V CE = 5V 400 125 C 300 200 25 C 100 - 40 C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 = 10 1 - 40 C 0.8 25 C 125 C 0.6 0.4 1 I C 10 100 - COLLECTOR CURRENT (mA) = 10 0.3 25 C 0.1 - 40 C 1 10 100 I C - COLLECTOR CURRENT (mA) 500 500 1 VCE = 5V 0.8 - 40 C 25 C 0.6 125 C 0.4 0.2 0.1 Figure 9. Base-Emitter Saturation Voltage vs. Collector Current 1 10 I C - COLLECTOR CURRENT (mA) 25 Figure 10. Base-Emitter On Voltage vs. Collector Current 500 100 V CB 20 = 40V CAPACITANCE (pF) I CBO - COLLECTOR CURRENT (nA) 125 C 0.2 Figure 8. Collector-Emitter Saturation Voltage vs. Collector Current V BE(ON) - BASE-EMITTER ON VOLTAGE (V) V BESAT - BASE-EMITTER VOLTAGE (V) Figure 7. Typical Pulsed Current Gain vs. Collector Current 0.4 10 1 0.1 16 12 C te 8 4 25 50 75 100 125 T A - AMBIENT TEMPERATURE ( C) 150 0.1 Figure 11. Collector Cut-Off Current vs. Ambient Temperature (c) 1998 Fairchild Semiconductor Corporation FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 f = 1 MHz C ob 1 10 REVERSE BIAS VOLTAGE (V) 100 Figure 12. Emitter Transition and Output Capacitance vs. Reverse Bias Voltage www.fairchildsemi.com 4 FFB2222A / FMB2222A / MMPQ2222A -- NPN Multi-Chip General-Purpose Amplifier Typical Performance Characteristics 400 400 I B1 = I B2 = 320 Ic V cc = 25 V TIME (nS) TIME (nS) 240 160 240 ts 160 tr t off 80 tf 80 t on td 100 I C - COLLECTOR CURRENT (mA) 0 10 1000 1 SOIC-16 SOT-6 0.5 SC70 -6 0.25 0 0 25 50 75 100 TE MPE RATURE (C) 125 150 V CE = 10 V I C = 10 mA 2 h re h ie h fe 1.2 hoe 0.8 0.4 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) 100 Figure 17. Common Emitter Characteristics (c) 1998 Fairchild Semiconductor Corporation FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 1000 V CE = 10 V T A = 25oC 6 h oe 4 h re 2 h fe 0 h ie 0 10 20 30 40 50 I C - COLLECTOR CURRENT (mA) 60 Figure 16. Common Emitter Characteristics 1.6 0 8 CHAR. RELATIVE TO VALUES AT VCE = 10V CHAR. RELATIVE TO VALUES AT TA = 25oC Figure 15. Power Dissipation vs. Ambient Temperature 2.4 100 I C - COLLECTOR CURRENT (mA) Figure 14. Switching Time vs. Collector Current CHAR. RELATIVE TO VALUES AT I C= 10mA PD - POWE R DIS SIPATION (W) Figure 13. Turn-On and Turn-Off Times vs. Collector Current 0.75 10 320 V cc = 25 V 0 10 Ic I B1 = I B2 = 10 1.3 I C = 10 mA T A = 25oC 1.25 1.2 h fe 1.15 h ie 1.1 1.05 1 h re 0.95 0.9 0.85 hoe 0.8 0.75 0 5 10 15 20 25 30 VCE - COLLECTOR VOLTAGE (V) 35 Figure 18. Common Emitter Characteristics www.fairchildsemi.com 5 FFB2222A / FMB2222A / MMPQ2222A -- NPN Multi-Chip General-Purpose Amplifier Typical Performance Characteristics (Continued) FFB2222A / FMB2222A / MMPQ2222A -- NPN Multi-Chip General-Purpose Amplifier Test Circuits 30 V 200 16 V 1.0 K 0 200ns 500 Figure 19. Saturated Turn-On Switching Time 6.0 V - 1.5 V 1k 37 30 V 1.0 K 0 200ns 50 Figure 20. Saturated Turn-Off Switching Time (c) 1998 Fairchild Semiconductor Corporation FFB2222A / FMB2222A / MMPQ2222A Rev. 2 www.onsemi.com 6 SC70 6L SYMM C L 2.000.20 0.65 A 0.50 MIN 6 4 B PIN ONE 1.250.10 1 1.90 3 0.30 0.15 (0.25) 0.40 MIN 0.10 0.65 A B 1.30 LAND PATTERN RECOMMENDATION 1.30 1.00 0.80 SEE DETAIL A 1.10 0.80 0.10 C 0.10 0.00 C 2.100.30 SEATING PLANE NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE (R0.10) 0.25 0.10 0.20 A) THIS PACKAGE CONFORMS TO EIAJ SC-88, 1996. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. D) DRAWING FILENAME: MKT-MAA06AREV6 30 0 0.46 0.26 SCALE: 60X Figure 25. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE (ACTIVE) www.onsemi.com 7 FFB3904 / FMB3904 / MMPQ3904 -- NPN Multi-Chip General Purpose Amplifier Physical Dimensions SSOT 6L Figure 26. 6-LEAD, SUPERSOT-6, JEDEC MO-193, 1.6 MM WIDE (ACTIVE) www.onsemi.com 8 FFB3904 / FMB3904 / MMPQ3904 -- NPN Multi-Chip General Purpose Amplifier Physical Dimensions (Continued) SO 16L NB 10.00 9.80 A 8.89 16 9 B 4.00 3.80 6.00 PIN ONE INDICATOR 1.75 1 5.6 8 0.51 0.35 1.27 (0.30) 0.25 M 1.27 C B A 0.65 LAND PATTERN RECOMMENDATION 1.75 MAX 1.50 1.25 SEE DETAIL A 0.25 0.10 C 0.25 0.19 0.10 C 0.50 0.25 X 45 NOTES: UNLESS OTHERWISE SPECIFIED (R0.10) GAGE PLANE (R0.10) 0.36 8 0 A) THIS PACKAGE CONFORMS TO JEDEC MS-012, VARIATION AC, ISSUE C. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS D) CONFORMS TO ASME Y14.5M-1994 E) LANDPATTERN STANDARD: SOIC127P600X175-16AM F) DRAWING FILE NAME: M16AREV12. SEATING PLANE 0.90 0.50 (1.04) DETAIL A SCALE: 2:1 Figure 27. 16-LEAD, SOIC, JEDEC MS-012, 0.150 inch, NARROW BODY (ACTIVE) www.onsemi.com 9 FFB3904 / FMB3904 / MMPQ3904 -- NPN Multi-Chip General Purpose Amplifier Physical Dimensions (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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