BSS123
Document number: DS30366 Rev. 21 - 2
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www.diodes.com
October 2019
© Diodes Incorporated
BSS123
ADVANCE INFO R MA T I O N
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON)
100V
6.0GS = 10V
Description and Applications
These N-Channel enhancement mode field effect transistors are
produced using DIODES proprietary, high density, uses advanced
trench technology. These products have been designed to minimize
on-state resistance while provide rugged, reliable, and fast switching
performance. These products are particularly suited for low voltage,
low current applications such as:
Small Servo Motor Control
Power MOSFET Gate Drivers
Switching Applications
Features and Benefits
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
High Drain-Source Voltage Rating
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The BSS123Q is suitable for automotive applications
requiring specific change control; these parts are AEC-Q101
qualified, PPAP capable, and manufactured in IATF 16949
certified facilities.
https://www.diodes.com/quality/product-definitions/
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)
Ordering Information (Note 4)
Part Number
Qualification
Case
Packaging
BSS123-7-F
Commercial
SOT23
3,000 / Tape & Reel
BSS123Q-13
Automotive
SOT23
10,000 / Tape & Reel
BSS123Q-7
Automotive
SOT23
3,000 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
Code
T
U
V
W
X
Y
Z
A
B
C
D
E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Equivalent Circuit
Top View
Top View
SOT23
D
G S
K23 = Product Type Marking Code
YM = Date Code Marking
Y  = Year (ex: C = 2015)
M = Month (ex: 9 = September)
D
S
G
e3
BSS123
Document number: DS30366 Rev. 21 - 2
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October 2019
© Diodes Incorporated
BSS123
ADVANCE INFO R MA T I O N
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
Continuous
VGSS
±20
V
Continuous Drain Current (Note 5) VGS = 10V
Continuous
ID
170
mA
Pulsed
IDM
680
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Max
Unit
Power Dissipation (Note 5)
PD
300
mW
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
R
417
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
100
-
-
V
VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current
IDSS
-
-
0.1
A
VDS = 100V, VGS = 0V
-
-
30
A
VDS = 100V, VGS = 0V
@ TA = +150°C (Note 7)
-
-
10
nA
VDS = 20V, VGS = 0V
Gate-Source Leakage , Forward
IGSSF
-
-
50
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(TH)
0.8
1.4
2.0
V
VDS = VGS, ID = 1mA
Static Drain-Source On-Resistance
RDS(ON)
-
-
6.0
VGS = 10V, ID = 0.17A
-
-
10
VGS = 4.5V, ID = 0.17A
Forward Transfer Admittance
gFS
80
370
-
ms
VDS =10V, ID = 0.17A, f = 1.0KHz
Diode Forward Voltage
VSD
-
0.84
1.3
V
VGS = 0V, IS = 0.34A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Ciss
-
22
60
pF
VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
-
3.5
15
Reverse Transfer Capacitance
Crss
-
2.0
6
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
tD(ON)
-
-
8
ns
VGS = 10V, VDD = 30V,
ID = 0.28A, RGEN = 50
Turn-On Rise Time
tR
-
-
8
ns
Turn-Off Delay Time
tD(OFF)
-
-
13
ns
Turn-Off Fall Time
tF
-
-
16
ns
Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
BSS123
Document number: DS30366 Rev. 21 - 2
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October 2019
© Diodes Incorporated
BSS123
ADVANCE INFO R MA T I O N
0.0
0.1
0.2
0.3
0.4
0.5
0 1 2 3 4 5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS = 2.5V
VGS = 3.0V
VGS = 4.0V
VGS = 10.0V
VGS=5.0V
VGS = 6.0V
2
3
4
5
6
0 0.1 0.2 0.3 0.4 0.5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(W)
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
VGS = 10V
VGS =4.5V
0
4
8
12
16
20
0 4 8 12 16 20
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
ID = 170mA
0
2
4
6
8
10
0 0.1 0.2 0.3 0.4 0.5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(W)
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
-55℃
25℃
85℃
150℃
125℃
VGS = 10V
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
VGS = 10V, ID = 170mA
VGS = 4.5V, ID = 170mA
0
0.05
0.1
0.15
0.2
0.25
0.3
0.6 1 1.4 1.8 2.2 2.6 3 3.4
ID, DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
VDS = 5V
-55℃
25℃
85℃
125℃
150℃
BSS123
Document number: DS30366 Rev. 21 - 2
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BSS123
ADVANCE INFO R MA T I O N
1
2
3
4
5
6
7
8
-50 -25 0 25 50 75 100 125 150
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W)
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
VGS = 10V, ID = 170mA
VGS = 4.5V, ID = 170mA
0
0.1
0.2
0.3
0.4
0.5
0 0.3 0.6 0.9 1.2 1.5
IS, SOURCE CURRENT (A)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
TJ = 125oC
TJ = 85oC
TJ = 25oC
TJ = -55oC
VGS = 0V
TJ = 150oC
1
10
100
0 5 10 15 20 25 30 35 40
CT, JUNCTION CAPACITANCE (pF)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
Crss
Coss
Ciss
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8
VGS (V)
Qg (nC)
Figure 11. Gate Charge
VDS = 30V, ID = 0.28A
0.001
0.01
0.1
1
0.1 1 10 100 1000
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
PW =10ms
PW =100µs
DC
RDS(ON) Limited
PW =1ms
PW =100ms
TJ(Max) = 150℃
TC = 25℃
Single Pulse
DUT on 1*MRP Board
VGS= 10V
PW =1s
PW =10s
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
VGS(TH), GATE THRESHOLD VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
ID = 250A
ID = 1mA
BSS123
Document number: DS30366 Rev. 21 - 2
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© Diodes Incorporated
BSS123
ADVANCE INFO R MA T I O N
0.001
0.01
0.1
1
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
r(t), TRANSIENT THERMAL RESISTANCE
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
D=Single Pulse
D=0.005
D=0.01
D=0.02
D=0.05
D=0.1
D=0.3
D=0.5
D=0.9
D=0.7
RJA(t) = r(t) * RJA
RJA = 357℃/W
Duty Cycle, D = t1 / t2
BSS123
Document number: DS30366 Rev. 21 - 2
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© Diodes Incorporated
BSS123
ADVANCE INFO R MA T I O N
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
0°
8°
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
X
Y
Y1 C
X1
BSS123
Document number: DS30366 Rev. 21 - 2
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BSS123
ADVANCE INFO R MA T I O N
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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