BUL381D
HIGH VOLTAG E FAST-SWITCHING
NPN POWER TRANSISTOR
■STMicr o electronics PREF E RRED
SALESTYPE
■HIGH VOLTAGE CAPABILITY
■LOW SPREA D OF DYNA M IC PARA ME TERS
■MINI MUM LOT- TO - LOT SPREAD F O R
REL IABLE OPERATIO N
■VERY HIGH SWITCHING SPEED
■LARGE RBSOA
■INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ELECTRONIC TRANSFORMERS FOR
HA LO GEN LAM P S
■ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■SWITC H MODE POW ER SUPPLIES
DESCRIPTION
The BUL381D is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
®
INT E R NAL SCH E M ATI C DIAG RA M
July 2003
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 800 V
VCEO Collector-Emitter Voltage (IB = 0) 400 V
VEBO Emitter-Base Voltage (IC = 0) 9 V
ICCollector Current 5 A
ICM Collector Pe ak Cu rrent (tp < 5 ms) 8 A
IBBase Current 2 A
IBM Base Peak Current (tp < 5 ms) 4 A
Ptot Total Dissipation at Tc = 25 oC70W
T
stg Storage Temp erature -65 to 150 oC
TjMax. Operating Junctio n Te mperature 150 oC
123
TO-220
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Amb ient Max 1.78
62.5
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE = 0) VCE = 80 0 V
VCE = 80 0 V Tj = 125 oC100
500 µA
µA
ICEO Collector Cut-off
Current (IB = 0) VCE = 40 0 V 250 µA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA L = 25 mH 400 V
VEBO Emitter-Base Voltag e
(IC = 0) IE = 10 mA 9 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 1 A IB = 0.2 A
IC = 2 A IB = 0.4 A
IC = 3 A IB = 0.75 A
0.5
0.7
1.1
V
V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 1 A IB = 0.2 A
IC = 2 A IB = 0.4 A 1.1
1.2 V
V
hFE∗DC Current Ga in IC = 2 A VCE = 5 V
IC = 10 mA VCE = 5 V 8
10
ts
tf
RESISTIVE LOAD
Storage Time
Fall Time
IC = 2 A VCC = 250 V tp = 30 µs
IB1 = - I B2 = 0.4 A 1.5 2.5
0.8 µs
µs
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A IB1 = 0.4 A
VBE(off) = -5 V RBB = 0 Ω
VCL = 250 V L = 200 µH
Tj = 12 5 oC
1.3
100 µs
ns
VfDiode Forward Voltage IC = 2 A 2.5 V
∗ P ulsed: P ulse durati on = 300 µs, duty cycle 1.5 %
Safe O perat ing Area Derating Curve
BUL381D
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DC Current Gain
Collector Emitter Saturation Voltage
Induct ive Fall T im e
DC Current Gain
Base Em itt er Sat uration Volt age
Inductive Stor age Time
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Reverse Bias e d SOA
Induct ive Lo ad Switching Test Circ uit
Resistive Load Switching Test Ciurcuit
1) Fast electronic switch
2) Non-inductive Resistor
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.052
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10.00 10.40 0.394 0.409
L2 16.40 0.645
L4 13.00 14.00 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154
M 2.60 0.102
DIA. 3.75 3.85 0.147 0.151
P011CI
TO-220 MECHANICAL DATA
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of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third part ies which may re sult from its use . No li cen s e i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject t o change without notice. This publication supersedes and r eplaces all information previously supplie d. S TMicroelectronics products
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroel ectronics.
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