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MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A — High-Voltage General-Purpose Diode

MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A Rev. 1.1. 0

November 2014

MMBD1401A / MMBD1403A / MMBD1404A /

MMBD1405A

High-Voltage General-Purpose Diode

Ordering Information

Part Number Top Mark Package Packing Method

MMBD1401A A29 SOT-23 3L Tape and Reel

MMBD1403A A32 SOT-23 3L Tape and Reel

MMBD1404A A33 SOT-23 3L Tape and Reel

MMBD1405A A34 SOT-23 3L Tape and Reel

SOT-23

Connection Diagram

1401A 1403A

1405A1404A

2NC

Descriptions

Sourced from process 2V.

MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A — High-Voltage General-Purpose Diode

MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A Rev. 1.1. 0 2

Absolute Maximum Ratings(1), (2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applic ations involving pulsed or

low-duty-cycle operations.

Thermal Characteristics(3)

Values are at TA = 25°C unless otherwise noted.

Note:

3. Device is mou nted on g lass epox y PCB 1.6 inch × 1.6 inch × 0.06 inch, mounti ng pad for the collec tor l ead mini mum

0.93 in2.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Value Unit

WIV Working Inverse Voltage 175 V

IOAverage Rectified Current 200 mA

IFDC Forward Current 600 mA

ifRecurrent Peak Forward Current 700 mA

if(surge) Non-Repetitive Peak Forward

Surge Current Pulse Width = 1.0 second 1.0 A

Pulse Width = 1.0 microsecond 2.0

TSTG Storage Temperature Range -55 to +150 °C

TJOperating Junction Temperature 150 °C

Symbol Parameter Max. Unit

PDPower Dissipation 350 mW

Derate above 25°C 2.8 mW/°C

RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W

Symbol Parameter Conditions Min. Max. Unit

BVBreakdown Voltage IR = 100 μA250V

IRReverse Current VR = 120 V 40 nA

VR = 175 V 100 nA

VFForward Voltage

IF = 10 mA 800 mV

IF = 50 mA 760 920 mV

IF = 200 mA 1.1 V

IF = 300 mA 1.25 V

CODiode Capa citance VR = 0, f = 1.0 MHz 2.0 pF

TRR Reverse Recovery Time IF = IR = 30 mA,

IRR = 1.0 mA, RL = 100 Ω50 nS

MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A — High-Voltage General-Purpose Diode

MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A Rev. 1.1. 0 3

Typical Performance Characteristics

Figure 1. Reverse Voltage vs. Reverse Current

BV - 1.0 to 100 μAFigure 2. Reverse Current vs. Reverse Voltage

IR - 55 to 205 V

Figure 3. Reverse Current vs. Reverse Voltage

IR - 180 to 255 V Figure 4. Forward Voltage vs. Forward Current

VF - 1.0 to 100 μA

Figure 5. Forward Voltage vs. Forward Current

VF - 0.1 to 10 mA Figure 6. Forward Voltage vs. Forward Current

VF - 10 to 800 mA

3 5 10 20 30 50 100

275

300

325

I - REVERSE CURRENT (uA)

V - REVERSE VOLTAGE (V)

Ta= 25°C

GENERAL RULE: The Reverse Current of a diode will approximately

double for every ten (10) Degree C increase in Temperature

55 75 95 115 135 155 175 195

V - REVERSE VOLTAGE (V)

I - REVERSE CURRENT (nA)

Ta= 25°C

GENERAL RULE: The Reverse Current of a diode will approximately

double for every ten Degree C increase in Temperature

180 200 220 240

100

V - REVERSE VOLTAGE (V)

I - REVERSE CURRENT (nA)

Ta= 25°C

255

1 2 3 5 10 20 30 50 100

250

300

350

400

450

I - FORWARD CURRENT (uA)

V - FORWARD VOLTAGE (mV)

Ta= 25°C

VF - 0.1 to 10 mA

0.1 0.2 0.3 0.5 1 2 3 5 10

450

500

550

600

650

700

I - FORWARD CURRENT (mA)

V - FORWARD VOLTAGE (mV)

725 Ta= 25°C

10 20 30 50 100 200 300 500

0.7

0.8

0.9

1.1

1.2

1.3

1.4

I - FORWARD CURRENT (mA)

V - FORWARD VOLTAGE (mV)

800

Ta= 25°C

MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A — High-Voltage General-Purpose Diode

MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A Rev. 1.1. 0 4

Typical Performance Characteristics (Continued)

Figure 7. Forward Voltage vs. Ambient Temperature

VF - 1.0 μA - 10 mA (- 40 to +80°C) Figure 8. Capacitance vs. Reverse Voltage

Figure 9. Reverse Recovery Time vs.

Reverse Recovery Current (Irr) Figure 10. Average Rectified Current(IO) and

Forward Current (IF) vs. Ambient Temperature(TA)

Figure 11. Power Derating Curve

0.001 0.003 0.01 0.03 0.1 0.3 1 3 10

200

400

600

800

I - FORWARD CURRENT (mA)

V - FORWARD VOLTAGE (mV)

Ta= 25°C

Ta= +80°C

Ta= -40°C

0 2 4 6 8 10 12 14

0.8

0.9

1.1

1.2

1.3

REVERSE VOLTAGE (V)

CAPACITANCE (pF)

Ta= 25°C

11.522.53

Irr - REVERSE RECOVERY CURRENT (mA)

REVERSE RECOVERY (nS)

IF = IR = 30 mA

Rloop = 100 Ohms

050100150

100

200

300

400

500

T - AMBIENT TEMPERATURE ( C)

I - CURRENT (mA)

I - FORWARD CURRENT STEADY STATE - mA

Io - AVERAGE RECTIFIED CURRENT - mA

0 50 100 150 200

100

200

300

400

500

I - AVERAGE TEMPERATURE ( C)

P - POWER DISSIPATION (mW)

DO-35 Pkg

SOT-23 Pkg

www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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