ABB Semiconductors AG reserves the right to change specifications without notice.
VRRM = 6000 V
IFAVM = 250 A
IFSM =3.6kA
VF0 =2.5V
rF=2.5
mΩ
ΩΩ
Ω
VDClink = 3000 V
Doc. No. 5SYA1108-02 Sep. 01
• Patented free-floating silicon technology
• Low switching losses
• Optimized for use as snubber diode in high-voltage GTO converters
• Standard press-pack ceramic housing, hermetically cold-welded
• Cosmic radiation withstand rating
Blocking
VRRM Repetitive peak reverse voltage 6000 V Half sine wave, tP = 10 ms, f = 50 Hz
IRRM Repetitive peak reverse current ≤50 mA VR = VRRM, Tj = 125°C
VDClink Permanent DC voltage for 100 FIT
failure rate 3000 V 100% Duty
VDClink Permanent DC voltage for 100 FIT
failure rate 3800 V 5% Duty
Ambient cosmic radiation at
sea level in open air.
Mechanical data (see Fig. 7)
min. 10 kN
FmMounting force max. 12 kN
aAcceleration:
Device unclamped
Device clamped
50
200
m/s2
m/s2
m Weight 0.25 kg
DSSurface creepage distance ≥30 mm
DaAir strike distance ≥20 mm
Fast Recovery Diode
5SDF 02D6002
PRELIMINARY
5SDF 02D6002
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1108-02 Sep. 01 page 2 of 5
On-state (see Fig. 2, 3)
IFAVM Max. average on-state current 250 A
IFRMS Max. RMS on-state current 400 A
Half sine wave, Tc = 85°C
IFSM Max. peak non-repetitive 3.6 kA tp = 10 ms Before surge:
surge current 11.4 kA tp = 1 ms Tc = Tj = 125°C
65⋅103A2stp= 10ms
After surge:
òI2dt Max. surge current integral
65⋅103A2stp= 1ms
VR ≈ 0 V
VFForward voltage drop ≤5V I
F= 1000 A
VF0 Threshold voltage 2.5 V Approximation for
rFSlope resistance 2.5 mΩIF= 200…4000 A
Tj = 125°C
Turn-on (see Fig. 4, 5)
Vfr Peak forward recovery voltage ≤370 V di/dt = 1000 A/µs, Tj = 125°C
Turn-off (see Fig. 6)
Irr Reverse recovery current ≤260 A
Qrr Reverse recovery charge ≤2000 µC
Err Turn-off energy ≤-- J
di/dt = 100 A/µs, Tj = 125 °C,
IF = 1000 A, VRM = 6000 V,
RS = 22 Ω,C
S = 0.22 µF
Thermal (see Fig. 01)
TjOperating junction temperature range -40...125°C
Tstg Storage temperature range -40...125°C
RthJC Thermal resistance junction to case ≤80 K/kW Anode side cooled
≤80 K/kW Cathode side cooled
≤40 K/kW Double side cooled
RthCH Thermal resistance case to heatsink ≤16 K/kW Single side cooled
Fm =
10… 12 kN
≤8 K/kW Double side cooled
Analytical function for transient thermal impedance.
i1234
R i(K/kW) 20.95 10.57 7.15 1.33
τi(s) 0.396 0.072 0.009 0.0044
)e-(1R = (t)Z
n
1i
/t-
ithJC å
=
i
τ
Fm = 10… 12 kN Double side cooled
5SDF 02D6002
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1108-02 Sep. 01 page 3 of 5
Fig. 1 Transient thermal impedance (junction to case) vs. time in analytical and graphical form (max. values).
Fig. 2 Forward current vs. forward voltage (typ.
and max. values).
Fig. 3 Surge current and fusing integral vs. pulse
width (max. values) for non repetitive, half-
sinusoidal surge current pulses.
5SDF 02D6002
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1108-02 Sep. 01 page 4 of 5
Fig. 4 Typical forward voltage waveform when the
diode is turned on with a high di/dt.
Fig. 5 Forward recovery voltage vs. turn-on di/dt
(max. values).
Fig. 6 Typical current and voltage waveforms at
turn-off with conventional RC snubber circuit
5SDF 02D6002
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Doc. No. 5SYA1108-02 Sep. 01
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email abbsem@ch.abb.com
Internet www.abbsem.com
Fig. 7 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.