MOTOROLA SC {XSTRS/KR FF 4b pe ff nanzesy OOS1451 3 i ee tee see eee rer ae weet 6367254 MOTOROLA SC (XSTRS/R FF). .. . 96D.81951. BD MAXIMUM RATINGS , - - : Rating Symbo! Value Unit T 27 OF ! Collector-Emitter Voltage VcEo 32 Vde Collector-Base Voltage Voso 60 Vde BCW65A Emitter-Base Voltage VEBO 5.0 Vde : Collector Current Continuous Ic 800 mAdc CASE 318-02/03, STYLE 6 THERMAL CHARACTERISTICS SOT-23 (TO-236AA/AB) Characteristic Symboi Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mW Ta = 25C , Derate above 25C 18 mWrc $ Collector Thermal Resistance Junction to Ambient Raja 556 CimW x, 3 Total Device Dissipation Pp 300 mw 1 Alumina Substrate,** Ta = 25C 1 a : Derate above 25C 2.4 mWPC 2 Thermal Resistance Junction to Ambient RaJA 417 CimW 2 Emitter Junction and Storage Temperature Ty Tstg 150 cc *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumine = 0.4 x 0.3 x 0.024 in. 99.5% alumina, GENERAL PURPOSE TRANSISTOR DEVICE MARKING NPN SILICON | BCWEEA = EA ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic : | Symbol | Min Typ Max Unit i OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR}CEO 32 _ ~_ Vde (Il = 10 mAde, Ip = 0) Collector-Emitter Breakdown Voltage V(BR)CES 60 _ Vde (lg = 10 pAdc, Veg = 0) Emitter-Base Breakdown Voltage V(BR)EBO 5.0 _ Vde (Ie = 10 pAde, Ip = 0) Collector Cutoff Current Ices (cE = 32 Vde, IE = 0) - - 20 nAdc (Vce = 32 Vde, le = 0, Ta = 180C} _ - 20 pAdc Emitter Cutoff Current - EBO - - 20 nAdc {Veg = 4.0 Vde, Ic = 0} ON CHARACTERISTICS DC Current Gain hee _ {lo = 100 wAde, Voce = 10 Vde} 35 _ _ (Ig = 10 mAde, Voge = 1.0 Vdc} 75 _ 220 (i = 100 mAdc, Vee = 1.0 Vde) 100 250 (ic = 500 mAdc, Vog = 2.0 Vdc) 38 = Collector-Emitter Saturation Voltage Vce(sat) Vide (ic = 500 mAde, lg = 50 mAdc} _- 0.7 _ Uc = 100 mAdc, Ip = 10 mAdc) ~ 0.3 - Base-Emitter Saturation Voltage VBE(sat) - 2.0 Vde (ig = 500 mAde, Ip = 50 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr 100 _- _ MHz (Ig = 20 mAde, Voge = 10 Vde, f = 100 MHz) Output Capacitance Cobo - - 12 pF (Veg = 10 Vde, le = 0, f = 1.0 MHz} {nput Capacitance Cibo _ _ 80 pF (VER = 0.5 Vde, Ic = 0, f = 1.0 MHz) | Noise Figure NF _- _- 10 dB (lc = 0.2 mAde, Vee = 5.0 Vde, Rg = 1.0 k0, f = 1.0 kHz, BW = 200 Hz) SWITCHING CHARACTERISTICS : + Turn-On Time ton _ _ 400 ns (IB1 = !p2 = 15 mAdc) Turn-Off Time toff _ _ 400 As E (Ic = 150 mAdc, RL = 150 9) | t i 1 MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-161 meen a8 tit MOTOROLA SC XSTRS/R FF 4b vel b3b7254 0081953 ? Tt ee = ot : Zt. week. OT an , 68367254 MOTOROLA SC CXSTRS/R F) . 86D 81953 D i MAXIMUM RATINGS - 7 - Zz 7 CO F . Rating Symbol | _BCW67 Bewes | Unit Collector-Emitter Voit: Vv 32 45 Vd Coll or Fas 7 > _ Vee 45 60 ae BCWG67,A,B,C ollector-Base Voltage CBO Ic Emitter-Base Voltage VeBo 5.0 Vde BCW68,F,G Collector Current Continuous Ic 800 mAdc THERMAL CHARACTERISTICS CASE 318-02/03, STYLE 6 Characteristic Symbol Max Unit SOT-23 (TO-236AA/AB) Total Device Dissipation FR-5 Board,* Pp 225 mw { TA = 25C 3Coll Darate above 25C 18 mWPrc ollector Thermal Resi Junction to Ambient | RaJA 556 CimW &: . Total Device Dissipation Pp 300 mW 1 Alumina Substrate,** Ta = 25C 1 2 ge Base Derate above 25C 24 mWPrc 2 Emitter Thermal Resistance Junction to Ambient Resa 417 CimW j Junction and Storage Temperature Ty: Tstg 150 *C *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. GENERAL PURPOSE TRANSISTOR DEVICE MARKING PNP SILICON . BCW67 = DD; BCW68 = DP; BCW67A = DA; BCW67B = DB; BCW67C = DC; : BCW68F = DF; BCW68G = DH i i ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) : [ Characteristic | Symbol | Min Typ Max Unit : OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO Vdc (lc = 10 mAde, Ip = 0) BCW67 Series 32 _ - BCW68 Series 45 _ _ Collector-Emitter Breakdown Voltage ViBR)CES Vde {Ico = 10 pAde, Veg = 0) BCW6?7 Series 46 _ _ BCW68 Series 60 _ _ Emitter-Base Breakdown Voltage V(BRIEBO 5.0 _ _ Vde (ig = 10 pAde, Iq = 0} Collector Cutoff Current IcES (VcE = 32 Vde, IE = 0) BCW67 Series 20 nAde (VcE = 45 Vde, Ip = 0) BCW68 Series ~~ _ 20 (Veg = 32 Vde, Ip = 0, Ta = 150C} BCW67 Series - - 10 pAdc (VcE = 45 Vde, ig = 0, TA = 150C) BCW68 Series ~ ~~ 10 Emitter Cutoff Current leBo - _ 20 nAdc (Veg = 4.0 Vde, Ic = 0) t ON CHARACTERISTICS : DC Current Gain hre _ (lc = 10 mAde, VcE = 1.0 Vdc) BCW67,A,68,F 75 _ _ BCW67B,68G 120 _ =_ BCW67C 180 cd _- {Ic = 100 mAde, Voce = 1.0 Ve) BCW67,A,68,F 100 _ 250 BCW67B,68G 160 _ 400 BCW67C 250 _ 630 (Ic = 300 mAdc, Veg = 1.0 Vde} BCW67,4,68,F 35 - - BCW67B,68G 60 _ BCW67C 100 _ _ Collector-Emitter Saturation Voltage (l = 300 mAdc, Ig = 30 mAdc) VCE(sat) _- _ 1.5 Vde Base-Emitter Saturation Voltage (Ic = 500 mAdsc, Ip = 50 mAdc) VBE{sat) - _ 2.0 Vde SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fT 100 _ _ MHz (ig = 20 mAde, Veg = 10 Vdc, f = 100 MHz) Output Capacitance (Veg = 10 Vde, le = 0, f = 1.0 MHz) Cobo _ _ 18 pF Input Capacitance (Veg = 0.5 Vdc, ic = 0, f = 1.0 MHz) Cibo _ _ 105 pF Noise Figure (Ic = 0.2 mAdc, Vcg = 5.0 Vde, Rg = 1.0 kf, NF _ _ 10 dB f = 1.0 kHz, BW = 200 Hz) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-18MOTOROLA SC {XSTRS/R FP -4b pe Q.anzasy 0061954 49 i 6367254 MOTOROLA SC CXSTRS/R F).. =s 98D 81954. OD; MAXIMUM RATINGS - T27 OF Rating Symbol Value Unit BCW69 : Collector-Emitter Voltage VcEO 45 Vde . Emitter-Base Voltage VEBO 5.0 Vde BCW70 : Collector Current Continuous Ic 100 mAdc CASE 318-02/03, STYLE 6 | THERMAL CHARACTERISTICS SOT-23 (TO-236AA/AB) Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mw 3 Collector Ta = 28C Derate above 25C 1.8 mWwPrc x 3 Thermal! Resistance Junction to Ambient RaJA 556 CimW 1 oe Base Total Device Dissipation Pp 300 mw 2 Alumina Substrate,** Ta = 25C 2 Emitter Derate above 25C 2.4 mWwrc Thermal Resistance Junction to Ambient Rada 417 CimWw Junction and Storage Temperature TJ. Tstq 150 C *FR-5 = 1.0 x 0.75 x 0.62 in. GENERAL PURPOSE TRANSISTOR **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. . PNP SILICON DEVICE MARKING | Bcwes = H1; BCW70 = H2 | Refer to 2N5086 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic | Symbol Min Max Unit OFF CHARACTERISTICS . Collector-Emitter Breakdown Voltage . V(BR}CEO 45 _- Vde (Ic = 2.0 mAde, Ip = 0) Collector-Emitter Breakdown Voltage VIBRICES 50 _ Vde (Ic = 100 pAde, Veg = 0) Emitter-Base Breakdown Voltage V(BR)EBO 5.0 _ Vde (lg = 10 pAdc, I = 0} Collector Cutoff Current IcBo (Vcg = 20 Vdc, Ip = 0} _ 100 nAdc (Veg = 20 Vdc, Ir = 0, TA = 100C) _- 10 pAdc ON CHARACTERISTICS DC Current Gain tfE ~ {ic = 2.0 mAdc, VcE = 5.0 Vdc} Bcwes 120 260 BCW70 215 500 Collector-Emitter Saturation Voltage VCE(sat) - 0.3 Vde ! (Ic = 10 mAdg, Ip = 0.5 mAdc) Base-Emitter On Voltage VBE(on) 0.6 0,75 Vde (lg = 2.0 mAdc, Vcg = 5.0 Vde) SMALL-SIGNAL CHARACTERISTICS Output Capacitance Cobo _ 7.0 pF (le = 0, Vcg = 10 Vde, f = 1.0 MHz) Noise Figure NF ~ 10 dB (Ip = 0.2 mAdc, Voce = 5.0 Vde, Rg = 2.0 kO, f = 1.0 kHz, BW = 200 Hz} MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-19<1 emote nievenas 4 nie MOTOROLA SC {XSTRS/R FI 6367254 MOTOROLA SC (XSTRS/R F) _ MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VcCEO 45 Vde Collector-Base Voltage Vcpo 50 Vdo Emitter-Base Voltage VEBO 5.0 Vde Collector Current Continuous Io 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mw Ta = 25C Derate above 25C 18 mwrc Thermal Resistance Junction to Ambient Roda 556 CimW Total Device Dissipation Pp 300 mW Alumina Substrate,** Ta = 25C Derate above 25C "24 mWwrc Thermal Resistance Junction to Ambient Raja 417 *CimnW Junction and Storage Temperature TJ. Tstg 150 C *FR-5 = 1.0 x 0.75 x 0.62 in. . **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING [ Bcw71 = K1; BCW72 = AH | 96D 81955 T 27-09 BCW71 BCW72 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) BQ: oO 2 : Tb ve bab7254 O04) DB 3 Collector Base 2 Ernitter NPN SILICON GENERAL PURPOSE TRANSISTOR ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Refer to MPS3904 for graphs. Characteristic [ Symbol | Min Typ Max Unit OFF CHARACTERISTICS Coltector-Emitter Breakdown Voltage V(BRICEO 45 _ ~ Vde (l = 2.0 mAdc, Veg = 0} Collector-Emitter Breakdown Voitage VIBRICES 45 - Vde (Ig = 2.0 mAde, Veg = 0) Collector-Base Breakdown Voltage ViBR)CBO 5Q _ _ Vde (Ico = 10 pAde, le = 0) Emitter-Base Breakdown Voltage V(BR)EBO 5.0 _ _ Vde le = 10 pAde, Ic = 0) Collector Cutoff Current icBo (Veg = 20 Vde, Ie = 0) _ _ 100 nAdc (Vcg = 20 Vde, Iz = 0, Ta = 100C) - - 10 pAdc ON CHARACTERISTICS DC Current Gain hee _ {ic = 2.0 mAdc, VcgE = 5.0 Vdc) BCW71 110 _ 220 BCW72 200 _ 450 Collector-Emitter Saturation Voltage VcE(sat) Vde (ig = 10 mAdc, ip = 0.5 mAdc) _ _- 0.25 (ic = 50 mAde, Ig = 2.5 mAdc} - 0.21 _ Base-Emitter Saturation Voltage VBE(sat) _ 0.85 _ Vde (i = 50 mAdc, fg = 2.5 mAdc} Base-Emitter On Voltage VBE{on) 0.6 ~ 0.75 Vde (Ic = 2.0 mAdc, Vcg = 5.0 Vdc) SMALL SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr _ 300 _ MHz {lc = 10 mAdc, Veg = 5.0 Vde, f = 35 MHz) ; Output Capacitance Cobo _ - 4.0 pF (le = 0, Vog = 10 Vde, f = 1,0 MHz) Input Capacitance Cibo _ 9.0 _ pF (ic = 0, Veg = 0.5 Vde, f = 1.0 MHz) Noise Figure NF - _ 10 dB (ic = 0.2 mAdc, Vce = 5.0 Vdc, Rg = 2.0k2, f = 1.0 kHz, BW = 200 Hz) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-20 asso f.MOTOROLA SC IXSTRS/R FF Fb DEM b3b7254 008195b & ir 6367254 MOTOROLA SC (XSTRS/R F) 96D 81956 D MAXIMUM RATINGS cs TT : 2 9 O97 Value BCX17 BCX18 PNP NPN Rating Symbol BCX19 BCX20 Unit Collector-Emitter Voltage VCEO 45 25 Vde BCX1 7, 18 BCX 19,20 Coflector-Base Voltage VcBo 50 30 Vde 3 Collector 3 Collector Emitter-Base Voltage VEBO 5.0 Vde . Collector Current Continuous Ic 500 mAdc 1 1 Base Base THERMAL CHARACTERISTICS 2 Emi i Characteristic Symbol Max Unit initter . 2 Emitter Total Device Dissipation FR-5 Board,* Pp 225 mw Ta = 25C CASE 318-02/03, STYLE 6 Derate above 25C 1.8 mWPC SOT-23 (TO-236AA/AB) Thermal Resistance Junction to Ambient Resa 556 CimW Total Device Dissipation Pp 300 mW 3 Alumina Substrate,** Ta = 25C Derate above 25C 2.4 mwrc 1 oe Thermal Resistance Junction to Ambient Rea 417 Cimw 2 Junction and Storage Temperature Ty. Tstg 150 C GENERAL PURPOSE TRANSISTOR *FR-5 = 1.0 x 0,75 x 0.62 in. *#Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. : DEVICE MARKING : | BCX17 = Ti; BCX18 = T2; BCX19 = U1; BCX20 = U2 | ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.} Characteristic | Symbot | Min Typ | Max | Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR}CEO Vde {Ic = 10 mAdg, Ip = 0) BCX17,19 45 _ - BCX18,20 25 _ - Collector-Emitter Breakdown Voltage V(BR)CES . Vdc (Ig = 10 pAde, Ig = 0) BCX17,19 50 _ - BCX18,20 30 _ Collector Cutoff Current IcBo (Vcp = 20 Vde, Ig = 0) _ _ 100 nAdc - (Veg = 20 Vde, IE = 0, TA = 150C) 5.0 pAdc Emitter Cutoff Current lE80 _ _ 10. vAde (VBE = 5.0 Vde, I = 0) ON CHARACTERISTICS OC Current Gain nee (Ic = 100 mAdc, Vcg = 1.0 Vde) 100 _ 600 (Ic = 300 mAde, VcE = 1.0 Vdc) 70 - _ {ic = 500 mAde, Voge = 1.0 Vde) 40 _ _ Collector-Emitter Saturation Voltage VcElsat) - - 0.62 Vde (ic = 500 mAde, Ip = 50 mAdc) Base-Emitter On Voltage - VBE(on} - _ 1.2 Vdc (Ic = 500 mAdc, Vce = 1.0 Vdc) . 1 I ! . ' MOTOROLA SMALL-SIGNAL SEMICONDUCTORS | } i 3-21