KBU6A thru KBU6M
Vishay General Semiconductor
Document Number: 88657
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• High case dielectric strength of 1500 VRMS
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for monitor, TV, printer, SMPS, adapter,
audio equipment, and home appliances applications.
MECHANICAL DATA
Case: KBU
Epoxy meets UL 94V-0 flammability rating
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
E4 suffix for consumer grade
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
e4
PRIMARY CHARACTERISTICS
IF(AV) 6 A
VRRM 50 V to 1000 V
IFSM 200 A
IR5 µA
VF1.0 V
TJ max. 150 °C
Case Style KBU
~
~
~~
Notes:
(1) Recommended mounted position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
(2) Thermal resistance from junction to ambient with units in free air, P.C.B. mounted on 0.5 x 0.5" (12 x 12 mm) copper pads, 0.375" (9.5 mm)
lead length
(3) Thermal resistance from junction to case with units mounted on a 2.6 x 1.4 x 0.06" thick (6.5 x 3.5 x 0.15 cm) aluminum plate
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL KBU6A KBU6B KBU6D KBU6G KBU6J KBU6K KBU6M UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward
rectified output current at
TC = 100 °C (1)(2)
TA = 40 °C (3) IF(AV)
6.0
6.0 A
Peak forward surge current single sine-wave
superimposed on rated load IFSM 250 A
Operating junction and storage temperature range TJ, TSTG - 50 to + 150 °C
KBU6A thru KBU6M
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88657
Revision: 15-Apr-08
2
Note:
(1) Thermal resistance from junction to ambient with units in free air, P.C.B. mounted on 0.5 x 0.5" (12 x 12 mm) copper pads, 0.375" (9.5 mm)
lead length
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL KBU6A KBU6B KBU6D KBU6G KBU6J KBU6K KBU6M UNIT
Maximum instantaneous
forward drop per diode 6.0 A VF 1.0 V
Maximum DC reverse
current at rated DC
blocking voltage per diode
TA = 25 °C
TA = 125 °C IR 5.0
1.0
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL KBU6A KBU6B KBU6D KBU6G KBU6J KBU6K KBU6M UNIT
Typical thermal resistance (1) RθJA
RθJC
8.6
3.1 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
KBU6J-E4/51 8.0 51 250 Anti-static PVC tray
Figure 1. Derating Curve Output Rectified Current
50 100 150
0
2
4
6
0
P.C.B. Mounting, TA
0.375" (9.5 mm) Lead Length
with 0.5 x 0.5" (12 x 12 mm)
Copper Pad Areas
Heatsink Mounting,
TC, 2.6 x 1.4 x 0.06"
(6.5 x 3.5 x 1.5 cm)
Al. Plated
Temperature (°C)
Average Forward Current (A)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
10 100
75
100
125
150
175
200
225
250
1
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
TJ = 150 °C
Single Sine-Wave
1.0 Cycle
KBU6A thru KBU6M
Vishay General Semiconductor
Document Number: 88657
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.6 0.7
100
10
1
0.1
0.80.9 1.0 1.1 1.2 1.3
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
020 40 60 80100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
TJ = 100 °C
TJ = 25 °C
Figure 5. Typical Junction Capacitance Per Diode
110 100
10
100
1000
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.160 (4.1)
0.065 (1.7)
0.185 (4.7)
0.895 (22.7)
0.935 (23.7)
0.140 (3.6) 0.165 (4.2)
0.085(2.2)
0.240 (6.09)
0.200 (5.08)
0.220 (5.6)
0.180 (4.6)
0.075 (1.9) R TYP. (2 Places)
45°
0.205 (5.2)
0.185 (4.7)
0.052 (1.3)
0.048(1.2)
0.280 (7.1)
0.260 (6.6)
DIA.
0.760
(19.3)
MAX.
0.700
(17.8)
0.660
(16.8)
1.0
(25.4)
MIN.
0.455 (11.3)
0.405 (10.3)
Case Style KBU
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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