UNISONIC TECHNOLOGIES CO., LTD
MJE13005 NPN SILICON TRANSISTOR
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Copyright © 2008 Unisonic Technologies Co., Ltd QW-R203-018,F
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE.
FEATURES
* VCEO(SUS)= 400 V
* Reverse bias SOA with inductive loads @ TC = 100°С
* Inductive switching matrix 2 to 4 Amp, 25 and 100°С
. . . tc @ 3A, 100°С is 180 ns (Typ)
* 700V blocking capability
* SOA and switching applications information
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/Relay drivers
* Deflection circuits
TO-220 TO-220F
1
1
TO-263
1
TO-126
1
*Pb-free plating product number: MJE13005L
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Plating Package 1 2 3 Packing
MJE13005-T60-K MJE13005L-T60-K TO-126 B C E Bulk
MJE13005-TA3-T MJE13005L-TA3-T TO-220 B C E Tube
MJE13005-TF3-T MJE13005L-TF3-T TO-220F B C E Tube
MJE13005-TQ3-R MJE13005L-TQ3-R TO-263 B C E Tape Reel
MJE13005-TQ3-T MJE13005L-TQ3-T TO-263 B C E Tube
MJE13005 NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT
Collector-Emitter Voltage VCEO(SUS) 400 V
Collector-Emitter Voltage VCBO 700 V
Emitter Base Voltage VEBO 9 V
Continuous Ic 4 A
Collector Current Peak (1) ICM 8 A
Continuous IB 2 A
Base Current Peak (1) IBM 4 A
Continuous IE 6 A
Emitter Current Peak (1) IEM 12 A
2 W Total Power Dissipation at Ta=25°С
Derate above 25°С PD 16 mW/°С
75 W
Total Power Dissipation at TC=25°С
Derate above 25°С PD 600 mW/°С
Operating and Storage Junction Temperature Range TJ , TSTG -65 ~ +150 °С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL MAX UNIT
Thermal Resistance, Junction to Ambient θJA 62.5 °С/W
Thermal Resistance, Junction to Case θJC 1.67 °С/W
(1) Pulse Test : Pulse Width=5ms,Duty Cycle≤10%
ELECTRICAL CHARACTERISTICS (Tc=25°С, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
*OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage VCEO(SUS) Ic=10mA , IB=0 400 V
Collector Cutoff Current
I
CBO
VCBO=Rated Value, VBE(OFF)=1.5 V
VCBO=Rated Value, VBE(OFF)=1.5V,
Tc=100°С
1
5
mA
Emitter Cutoff Current IEBO V
EB=9V, Ic=0 1 mA
SECOND BREAKDOWN
Second Breakdown Collector Current
with bass forward biased Is/b
See Figure 11
Clamped Inductive SOA with Base
Reverse Biased RBSOA
See Figure 12
*ON CHARACTERISTICS (1)
hFE1 Ic=1A, VCE=5V 10 60
DC Current Gain hFE2 Ic=2A, VCE=5V 8 40
Ic=1A, IB=0.2A 0.5 V
Ic=2A, IB=0.5A 0.6 V
Ic=4A, IB=1A 1
V
Collector-Emitter Saturation Voltage VCE(SAT)
Ic=2A, IB=0.5A, Ta=100°С 1 V
Ic=1A, IB=0.2A 1.2 V
Ic=2A, IB=0.5A 1.6
V
Base-Emitter Saturation Voltage VBE (SAT)
Ic=2A, IB=0.5A, Tc=100°С 1.5
V
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product fT Ic=500mA, VCE=10V, f=1MHz 4 MHz
Output Capacitance Cob VCB=10V, IE=0, f=0.1MHz 65 pF
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ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time tD 0.025 0.1 μs
Rise Time tR 0.3 0.7 μs
Storage Time tS 1.7 4 μs
Fall Time tF
Vcc=125V, Ic=2A, IB1=IB2=0.4A,
tP=25μs, Duty Cycle≤1%
0.4 0.9 μs
* Pulse Test: Pulse Width=300μs, Duty Cycle≤2%
Table 1.Test Conditions for Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE
SWITHCING
TEST CIRCUITS
Pw
5V
DUTY CYCLE? 10%
tr, tf? 10ns 68
0.001µF
1k
1N4933
0.02µF 270
+5V
1k
1k
33 1N4933
1N4933 33
+5V
RB
MJE210
IB
2N2222
2N2905
47
1/2W
100
MJE200
-VBE(off)
T.U.T.
Vcc
MR826*
V
*SEL
5.1k
51
V
C
L
Ic
NOTE
PW and Vcc Adjusted for Desired Ic
RB Adjusted for Desired IB1
+125V
RB
D1
-4.0V
SCOPE
Rc
TUT
CIRCUIT
VALUES
Coil Data : GAP for 200μH/20 A Vcc=20V
FERROXCUBE core #6656 Lcoil=200μH Vclamp=300V
Full Bobbin ( ~ 16 Turns) #16
Vcc=125V
Rc=62Ω
D1=1n5820 or
Equiv.
RB=22Ω
TEST WAVEFORMS
OUTPUT WAVEFORMS
MJE13005 NPN SILICON TRANSISTOR
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RESISTIVE SWITCHING PERFORMANCE
Time, t (°С)
Time, t (°С)
Transient Thermal Resistance, r(t)
(Normalized)
Collector Current, I
C
(A)
Collector Current, I
C(pk)
(A)
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RESISTIVE SWITCHING PERFORMANCE
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SAFE OPERATI NG AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable
operation; e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 4 is based on TC = 25°С; TJ(pk) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when TC≥25°С. Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at the voltages shown on Figure 4 may be found at any
case temperature by using the appropriate curve on Figure 6.
TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe
Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified
under clamped conditions so that the device is never subjected to an avalanche mode. Figure 5 gives the complete
RBSOA characteristics.
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TYPICAL CHARACTERISTICS
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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
