© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 6
1Publication Order Number:
MJ11028/D
MJ11028, MJ11030,
MJ11032 (NPN)
MJ11029, MJ11033 (PNP)
High-Current
Complementary Silicon
Power Transistors
High−Current Complementary Silicon Power Transistors are for use
as output devices in complementary general purpose amplifier
applications.
Features
•High DC Current Gain −hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc
•Curves to 100 A (Pulsed)
•Diode Protection to Rated IC
•Monolithic Construction with Built−In Base−Emitter Shunt Resistor
•Junction Temperature to +200_C
•Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector−Emitter Voltage MJ11028/29
MJ11030
MJ11032/33
VCEO 60
90
120
Vdc
Collector−Base Voltage MJ11028/29
MJ11030
MJ11032/33
VCBO 60
90
120
Vdc
Emitter−Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous
− Peak (Note 1)
IC50
100
Adc
Base Current − Continuous IB2.0 Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C @ TC = 100_C
PD300
1.71
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg − 55 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum Lead Temperature for
Soldering Purposes for v 10 seconds
ÎÎÎ
ÎÎÎ
ÎÎÎ
TL
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
275
ÎÎ
ÎÎ
ÎÎ
_C
Thermal Resistance, Junction−to−Case RqJC 0.58 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−204 (TO−3)
CASE 197A
STYLE 1
50 AMPERE
COMPLEMENTARY
DARLINGTON POWER
TRANSISTORS
60 − 120 VOLTS
300 WATTS
MARKING
DIAGRAM
MJ110xx = Device Code
xx = 28, 29, 30, 32, 33
G= Pb−Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin
http://onsemi.com
MJ110xxG
AYYWW
MEX
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
COLLECTOR
CASE
BASE
1
EMITTER 2
COLLECTOR
CASE
BASE
1
EMITTER 2
NPN PNP
MJ11028 MJ11029
MJ11030
MJ11032
MJ11033
21
MJ11028, MJ11030, MJ11032 (NPN)
http://onsemi.com
2
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
≈3.0 k ≈25
PNP
MJ11029
MJ11033
BASE
EMITTER
COLLECTOR
≈3.0 k ≈25
NPN
MJ11028
MJ11030
MJ11032
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1) MJ11028, MJ11029
(IC = 1 00 mAdc, IB = 0) MJ11030
MJ11032, MJ11033
V(BR)CEO 60
90
120
−
−
−
Vdc
Collector−Emitter Leakage Current
(VCE = 60 Vdc, RBE = 1 kW) MJ11028, MJ11029
(VCE = 90 Vdc, RBE = 1 kW) MJ11030
(VCE = 120 Vdc, RBE = 1 kW) MJ11032, MJ11033
(VCE = 60 Vdc, RBE = 1 kW, TC = 150_C) MJ11028, MJ11029
(VCE = 120 Vdc, RBE = 1 kW, TC = 150_C) MJ11032, MJ11033
ICER
−
−
−
−
−
2
2
2
10
10
mAdc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
−5
mAdc
Collector−Emitter Leakage Current
(VCE = 50 Vdc, IB = 0)
ICEO
−2
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 25 Adc, VCE = 5 Vdc)
(IC = 50 Adc, VCE = 5 Vdc)
hFE 1 k
400
18 k
−
−
Collector−Emitter Saturation Voltage
(IC = 25 Adc, IB = 250 mAdc)
(IC = 50 Adc, IB = 500 mAdc)
VCE(sat)
−
−
2.5
3.5
Vdc
Base−Emitter Saturation Voltage
(IC = 25 Adc, IB = 200 mAdc)
(IC = 50 Adc, IB = 300 mAdc)
VBE(sat)
−
−
3.0
4.5
Vdc
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
MJ11028, MJ11030, MJ11032 (NPN)
http://onsemi.com
3
ORDERING INFORMATION
Device Package Shipping
MJ11028 TO−204
100 Units / Tray
MJ11028G TO−204
(Pb−Free)
MJ11029 TO−204
MJ11029G TO−204
(Pb−Free)
MJ11030 TO−204
MJ11030G TO−204
(Pb−Free)
MJ11032 TO−204
MJ11032G TO−204
(Pb−Free)
MJ11033 TO−204
MJ11033G TO−204
(Pb−Free)
IC, COLLECTOR CURRENT (AMP)
100
0.2
Figure 2. DC Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
0.5 1 2 5 10 20 50 200
20
10
5
50
2
1
0.5
0.2
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
SECOND BREAKDOWN LIMITED
MJ11028, 29
MJ11032, 33
100
There are two limitations on the power−handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
100 k
IC, COLLECTOR CURRENT (AMP)
50 k
20 k
10 k
5 k
2 k
500
Figure 3. DC Current Gain
1 2 5 10 10020 50
Figure 4. “On” Voltage
100
VCE = 5 V
TJ = 25°C
1 k
200
MJ11029, MJ11033 PNP
MJ11028, MJ11030, MJ11032 NPN
5
4
3
2
1
1 2 5 10 10020 50
03
TJ = 25°C
IC/IB = 100 VBE(sat)
80 ms
(PULSED)
MJ11029, MJ11033 PNP
MJ11028, MJ11030, MJ11032 NPN
80 ms
(PULSED)
VCE(sat)
MJ11028, MJ11030, MJ11032 (NPN)
http://onsemi.com
4
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 197A−05
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.530 REF 38.86 REF
B0.990 1.050 25.15 26.67
C0.250 0.335 6.35 8.51
D0.057 0.063 1.45 1.60
E0.060 0.070 1.53 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N0.760 0.830 19.31 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
−T−SEATING
PLANE
2 PL
D
M
Q
M
0.30 (0.012) Y M
T
M
Y
M
0.25 (0.010) T
−Q−
−Y−
2
1
L
GB
V
H
U
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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Phone: 81−3−5773−3850
MJ11028/D
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