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2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7000 / 2N7002 / NDS7002A Rev. 2.10 1
August 2016
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
Features
• High Density Cell Design for Low RDS(ON)
• Voltage Controlled Small Signal Switch
• Rugged and Reliable
• High Saturation Current Capability
Ordering Information
Part Number Marking Package Packing Method Min Order Qty /
Immediate Pack
Qty
2N7000 2N7000 TO-92 3L Bulk 10000 / 1000
2N7000_D74Z 2N7000 TO-92 3L Ammo 2000 / 2000
2N7000_D75Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000
2N7000_D26Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000
2N7002 702 SOT-23 3L Tape and Reel 3000 / 3000
NDS7002A 712 SOT-23 3L Tape and Reel 3000 / 3000
Description
These N-channel enhancement mode field effect transis-
tors are produced using Fairchild's proprietary, high cell
density, DMOS technology. These products have been
designed to minimize on-state resistance while providing
rugged, reliable, and fast switching performance. They
can be used in most applications requiring up to 400 mA
DC and can deliver pulsed currents up to 2 A. These
products are particularly suited for low-voltage, low-cur-
rent applications, such as small servo motor control,
power MOSFET gate drivers, and other switching appli-
cations.
1. Source 2. Gate 3. Drain
TO-92
1
2N7002/NDS7002A
S
D
G
SOT-23
(TO-236AB)
S
D
G
2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7000 / 2N7002 / NDS7002A Rev. 2.10 2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol Parameter Value Unit
2N7000 2N7002 NDS7002A
VDSS Drain-to-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS ≤ 1 M 60 V
VGSS Gate-Source Voltage - Continuous ±20 V
Gate-Source Voltage - Non Repetitive (tp < 50 S) ±40
ID Maximum Drain Current - Continuous 200 115 280 mA
Maximum Drain Current - Pulsed 500 800 1500
PD Maximum Power Dissipation Derated above 25°C 400 200 300 mW
3.2 1.6 2.4 mW/°C
TJ, TSTG Operating and Storage Temperature Range -55 to 150 -65 to 150 °C
TL Maximum Lead Temperature for Soldering Purposes,
1/16-inch from Case for 10 Seconds 300 °C
Symbol Parameter Value Unit
2N7000 2N7002 NDS7002A
RJA Thermal Resistance, Junction to Ambient 312.5 625 417 °C/W
Symbol Parameter Conditions Type Min. Typ. Max. Unit
Off Characteristic s
BVDSS
Drain-Source Breakdown
Voltage VGS = 0 V, ID = 10 AAll 60 V
IDSS Zero Gate Voltage Drain
Current
VDS = 48 V, VGS = 0 V 2N7000 1 A
VDS = 48 V, VGS = 0 V,
TC = 125°C
1mA
VDS = 60 V, VGS = 0 V 2N7002
NDS7002A
1A
VDS = 60 V, VGS = 0 V,
TC = 125°C
0.5 mA
IGSSF Gate - Body Leakage,
Forward
VGS = 15 V, VDS = 0 V 2N7000 10 nA
VGS = 20 V, VDS = 0 V 2N7002
NDS7002A 100 nA
IGSSR Gate - Body Leakage,
Reverse
VGS = -15 V, VDS = 0 V 2N7000 -10 nA
VGS = -20 V, VDS = 0 V 2N7002
NDS7002A -100 nA
2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7000 / 2N7002 / NDS7002A Rev. 2.10 3
Electrical Characteristics (Continued)
Symbol Parameter Conditions Type Min. Typ. Max. Unit
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 2N7000 0.8 2.1 3 V
VDS = VGS, ID = 250 A2N7002
NDS7002A 12.12.5
RDS(ON) Static Drain-Source
On-Resistance
VGS = 10 V,
ID = 500 mA
2N7000 1.2 5
VGS = 10 V,
ID = 500 mA, TC = 125°C 1.9 9
VGS = 4.5 V, ID = 75 mA 1.8 5.3
VGS = 10 V,
ID = 500 mA
2N7002 1.2 7.5
VGS = 10 V,
ID = 500 mA, TC = 100°C 1.7 13.5
VGS = 5 V,
ID = 50 mA 1.7 7.5
VGS = 5 V,
ID = 50 mA, TC = 100°C 2.4 13.5
VGS = 10 V,
ID = 500 mA
NDS7002A 1.2 2
VGS = 10 V,
ID = 500 mA, TC = 125°C 23.5
VGS = 5 V,
ID = 50 mA 1.7 3
VGS = 5 V,
ID = 50 mA, TC = 125°C 2.8 5
VDS(ON) Drain-Source On-Voltage VGS = 10 V,
ID = 500 mA
2N7000 0.6 2.5 V
VGS = 4.5 V,
ID = 75 mA 0.14 0.4
VGS = 10 V,
ID = 500 mA
2N7002 0.6 3.75
VGS = 5.0 V,
ID = 50 mA 0.09 1.5
VGS = 10 V,
ID = 500 mA
NDS7002A 0.6 1
VGS = 5.0 V,
ID = 50 mA 0.09 0.15
ID(ON) On-State Drain Current VGS = 4.5 V,
VDS = 10 V
2N7000 75 600 mA
VGS = 10 V,
VDS 2 VDS(on)
2N7002 500 2700
VGS = 10 V,
VDS 2 VDS(on)
NDS7002A 500 2700
gFS Forward
Transconductance
VDS= 10 V,
ID = 200 mA
2N7000 100 320 mS
VDS 2VDS(ON),
ID = 200 mA
2N7002 80 320
VDS 2VDS(ON),
ID = 200 mA
NDS7002A 80 320
2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7000 / 2N7002 / NDS7002A Rev. 2.10 4
Electrical Characteristics (Continued)
Note:
1. Pulse test : Pulse Width ≤ 300 μs, Duty Cycel ≤ 2 %.
Symbol Parameter Conditions Type Min. Typ. Max. Unit
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
All 20 50 pF
Coss Output Capacitance All 11 25
Crss Reverse Transfer
Capacitance All 4 5
ton Turn-On Time VDD = 15 V, RL = 25 ,
ID = 500 mA,
VGS= 10 V, RGEN = 25
2N7000
10
ns
VDD = 30 V, RL = 150 ,
ID = 200 mA, VGS= 10 V,
RGEN = 25
2N7002
NDS7002A 20
toff Turn-Off Time VDD = 15 V, RL = 25 ,
ID = 500 mA, VGS= 10 V,
RGEN = 25
2N7000
10
ns
VDD = 30 V, RL = 150 ,
ID = 200 mA, VGS= 10 V,
RGEN = 25
2N7002
NDS7002A 20
Drain-Source Diode Characterist ics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward
Current
2N7002 115 mA
NDS7002A 280
ISM Maximum Pulsed Drain-Source Diode Forward
Current
2N7002 0.8 A
NDS7002A 1.5
VSD Drain-Source Diode
Forward Voltage
VGS = 0 V,
IS = 115 mA(1)
2N7002 0.88 1.5 V
VGS = 0 V,
IS = 400 mA(1)
NDS7002A 0.88 1.2
2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7000 / 2N7002 / NDS7002A Rev. 2.10 5
Typical Performance Characteristics
2N7000 / 2N7002 / NDS7002A
01 45
0
0.5
1
1.5
2
V
23
, DRAIN-SOURCE VOLTAGE (V
I , DRAIN-SOURCE CURRENT (A)
9.0
4.0
8.0
3.0
7.0
= 10VVGS
VDS
D
5.0
6.0
-50 -25 0 25 50 75 100 125 150
0.5
0.75
1
1.25
1.5
1.75
2
T , JUNCTION TEMPERATURE (°C)
J
VGS
= 10V
D
I = 500mA
-50 -25 0 25 50 75 100 125 150
0.8
0.85
0.9
0.95
1
1.05
1.1
T , JUNCTION TEM PERA T URE (°C)
th
V , N250$/,=(D
WK91250$/,=('
*$7(6285&(7+5(6+2/'92/7$*(
J
D
I = 1 mA
DS
V = VGS
0 0 .4 0 .8 1 .2 1 .6 2
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
GS
V =4.0V
D
7.0
4.5
10
5.0
6.0
9.0
8.0
0 0.4 0.8 1.2 1.6 2
0
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
J
T = 125°C
25°C
-55°C
D
V V V
GS
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with
Temperature
02 810
0
0.4
0.8
1.2
1.6
2
46
, GATE TO SOURCE VOLTAGE (VVV
VV = 109
DS
GS
J
T = -55°C 25°C
125°C
DS(on)
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(on)
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(on)
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
,'5$,1&855(17$
D
2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7000 / 2N7002 / NDS7002A Rev. 2.10 6
Typical Performance Characteristics (Continued)
2N7000 / 2N7002 / NDS7002A
-50 -25 0 25 50 75 100 125 150
0.925
0.95
0.975
1
1.025
1.05
1.075
1.1
T , JUNCTION TEM PERATURE (°C)
BV'66 NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
J
D
I = 250µA
0.2 0.
41
.4
0.001
0.005
0.01
0.05
0.1
0.5
1
2
V
0.6 0 .8 1 1.2
, BODY DIODE FORWARD VOLTAGE (V)
S
I , REVERSE DRAIN CURRENT (A)
VV GS
9
J
T = 125°C
VSD
25°C
-55°C
00
.4 1 .6 2
0
2
4
6
8
10
0.81.2
g
Q , *ATE CHARGE (nC)
V , GA E-SOURCE VOLTAGE (V)VGS
D
I =500mA
DS
V = 25V
115mA
280mA
123 3050
1
2
5
10
20
40
60
51020
VVDS , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
Ciss
f = 1 MHz
GS
V = 0V
CC oss
Crss
G
D
S
VDD
RL
V
V
IN
OUT
VGS
DUT
RGEN
10%
50%
90%
10%
90%
90%
50%
Input, Vin
Output, Vout
ton toff
td(off) tf
tr
td(on)
Inverted
10%
Pulse Width
Figure 7. Breakdown Voltage Variation
with Temperature
Figure 8. Body Diode Forward Voltage Variation with
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
Figure 11.6ZLWFKLQJ7HVW&LUFXLW Figure 12. Switching Waveforms
0..
2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7000 / 2N7002 / NDS7002A Rev. 2.10 7
Typical Performance Characteristics (Continued)
0.0001 0.10.001 0.01 1 10 100 300
0.001
0.002
0.01
0.05
0.1
0.2
0.5
1
1
t , TIME (sec)
r(t), NORMALIZED EFFECTIVETRANSIENT
THERMAL RESISTANCE
6LQJOH3XOVH
' '
0.0001 0.10.001 0.01 1 10 100 300
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
r(t), NORMALIZED EFFECTIVETRANSIENT
THERMAL RESISTANCE
1
6LQJOH3XOVH
'
3SN
W
W
99
'6
'5$,16285&(92/7$*(9
9
99
6,1*/(38/6(
77 &
*6
$
5'621/LPLW
PV
PV
PV
'&
V
XV
V
Figure 16. TO-92, 2N7000 Transient Thermal Response Curve
9
'5$,16285&(92/7$*(9
'
,'5$,1&855(17$
9
'6
99
6,1*/(38/6(
77 &
*6
$
5'621/LPLW
PV
PV
PV
&
V
'
V
XV
9
'5$,16285&(92/7$*(
,'5$,1&855(17$
9
'6
'
9
99
*6
6,1*/(38/6(
77 &
$
5'621/LPLW
PV
PV
PV
&
V
'
V
XV
Figure 13. 2N7000 Maximum
Safe Operating Area
Figure 14. 2N7002 Maximum
Safe Operating Area
Figure 15. NDS7000A Maximum
Safe Operating Area
'
,'5$,1&855(17$
Figure 1.62711'6$7UDQVLHQW7KHUPDO5HVSRQVH&XUYH
R
DDuty Cy, cle' WW
RRQ-$W UW5Q-$
5Q-$= (See Datasheet)
P(pk)
t1 t
2
TJ - TA = P * 5Q-$ (t)
UW5Q-$
5Q-$
= (See Datasheet)
RRQ-$W
TJ - TA = P * 5Q-$ (t)
DDuty Cy,cle' WW
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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