ISL15100
4FN8577.0
September 19, 2013
Absolute Maximum Ratings (TA = +25°C) Thermal Information
VS+ Voltage to VS- or GND . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +13.3V
INA+, INB+ Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND to VS+
C0, C1 Voltage to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VS+
Current into any Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mA
Continuous Output Current for Long Term Reliability. . . . . . . . . . . . . . . . 50mA
Latch-up (Tested per JESD78D, Class II) . . . . . . . . . . . . . . . . . . . . . . 100mA
ESD Rating
Human Body Model (Tested per JESD22-A114F). . . . . . . . . . . . . . . . . . 4kV
Charge Device Model (Tested per JESD22-C101E). . . . . . . . . . . . . 1.5kV
Machine Model (Tested per JESD22-A115C) . . . . . . . . . . . . . . . . . 300V
Thermal Resistance (Typical) θJA (°C/W) θJC (°C/W)
16 Ld QFN Package (Notes 4, 5) . . . . . . . . 53 16.5
Maximum Junction Temperature (Plastic Package) . . . . . . . . . . . +150°C
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . -40°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C
Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . - 40°C to +150°C
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
4. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
5. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications VS+ = +12V, VS- = GND = 0V, see Figure 3, Full Bias (C0 = C1 = 0V), TA = +25°C, unless otherwise specified.
PARAMETER DESCRIPTION CONDITIONS
MIN
(Note 6) TYP
MAX
(Note 6) UNIT
DYNAMIC PERFORMANCE
-3dB Bandwidth BW Figure 3, 2VP-P differential output at pins 180 MHz
Slew Rate SR Differential VOUT (VOUTA - VOUTB) from -5V
to +5V (10VP-P)
1200 V/µs
Total Harmonic Distortion THD, Low Frequency,
Light Load
200kHz, differential 12VP-P, across ≥350Ω
differential load
-88 -67 dBc
THD, Low Frequency,
Heavy Load
200kHz, differential 12VP-P, across 29Ω
differential load
-72 -68 dBc
THD, High Frequency,
Light Load
4MHz, differential 12VP-P
, across ≥350Ω
differential load
-64 -58 dBc
THD, High Frequency,
Heavy Load
4MHz, differential 12VP-P
, across 29Ω
differential load
-51 -48 dBc
Avg. Multi-Tone Power Ratio MTPR 2MHz to 50MHz, 25kHz tone spacing,
PLINE = 15.5dBm, CF = 15dB
-43 dBc
Off State Multi-Tone Power Ratio MTPR-OFF 2MHz to 50MHz, 25kHz tone spacing,
PLINE = 15.5dBm, CF = 15dB
-55 dBc
Non-inverting Input Spot Voltage Noise Eni F > 1MHz, spot noise voltage on INA+ and
INB+ inputs separately
6nV/√Hz
Non-inverting Input Spot Current Noise Ini+ F > 1MHz, spot noise current on INA+ and
INB+ inputs separately
13 pA/√Hz
Inverting Input Spot Current Noise Ini- F > 1MHz, spot noise current on INA- and
INB- inputs separately
50 pA/√Hz
DC AND INPUT CHARACTERISTICS
Non-Inverting Input Bias Current IB+ Non-inverting inputs, INA+ and INB+, at
mid-supply voltage (Note 7)
-7 2 7 µA
Non-Inverting Input Bias Current
Mismatch
IB+DM Difference between the INA+ and INB+
bias currents
-0.5 0 0.5 µA
Inverting Input Bias Current IB- Inverting inputs, INA- and INB-, at mid
supply voltage (Note 7)
-90 -30 55 µA