2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(ON) max ID max TA = +25C 60V 7.5 @ VGS = 5V 210mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Notes 3 & 4) Qualified to AEC-Q101 standards for High Reliability Mechanical Data ideal for high efficiency power management applications. Applications Motor Control Power Management Functions Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) Drain SOT23 D Gate Top View S G Source Equivalent Circuit Top View Ordering Information (Note 5) Part Number 2N7002-7-F 2N7002-13-F 2N7002Q-7-F Notes: Compliance Standard Standard Automotive Case SOT23 SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Product manufactured with Date Code V12 (week 50, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V12 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. K72 Chengdu A/T Site Date Code Key Year 2002 Code N Month Code Jan 1 2003 P 2004 R Feb 2 2N7002 Document number: DS11303 Rev. 33 - 2 2005 S Mar 3 K72 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) YM K72 YM Marking Information Shanghai A/T Site 2006 T Apr 4 2007 U 2008 V May 5 2009 W 2010 X Jun 6 1 of 5 www.diodes.com Jul 7 2011 Y 2012 Z Aug 8 2013 A Sep 9 2014 B Oct O 2015 C 2016 D Nov N 2017 E Dec D July 2013 (c) Diodes Incorporated 2N7002 Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 1.0M Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Continuous Drain Current (Note 7) VGS = 10V Maximum Body Diode Forward Current (Note 7) Symbol VDSS VDGR Continuous Pulsed TA = +25C Steady TA = +85C State TA = +100C TA = +25C Steady TA = +85C State TA = +100C Pulsed Continuous Value 60 60 20 40 170 120 105 VGSS ID 210 150 135 0.5 2 800 ID IS Pulsed Drain Current (10s pulse, duty cycle = 1%) IDM Units V V V mA mA A mA Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol (Note 6) (Note 7) (Note 6) (Note 7) (Note 7) Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Temperature Range PD RJA RJC TJ, TSTG Value 370 540 348 241 91 -55 to +150 Units mW C/W C Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance @ TC = +25C @ TC = +125C @ TJ = +25C @ TJ = +25C @ TJ = +125C Symbol Min Typ Max Unit BVDSS 60 70 V VGS = 0V, ID = 10A IDSS A VDS = 60V, VGS = 0V IGSS 1.0 500 10 nA VGS = 20V, VDS = 0V VGS(th) 1.0 2.5 V 3.2 4.4 7.5 5.0 13.5 VDS = VGS, ID = 250A VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA RDS(ON) Test Condition ID(ON) gFS VSD 0.5 80 1.0 0.78 1.5 A mS V Ciss Coss Crss 22 11 2.0 50 25 5.0 pF pF pF VDS = 25V, VGS = 0V f = 1.0MHz Gate resistance Rg 120 VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge SWITCHING CHARACTERISTICS (Note 9) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Qg Qgs Qgd 223 82 178 pC VDS = 10V, ID = 250mA tD(on) tr tD(off) tf 2.8 3.0 7.6 5.6 ns VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 On-State Drain Current Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout 7. Device mounted on 1" x 1" FR-4 PCB with high coverage 2oz. Copper, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2N7002 Document number: DS11303 Rev. 33 - 2 2 of 5 www.diodes.com July 2013 (c) Diodes Incorporated 2N7002 7 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE () ID, DRAIN-SOURCE CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 0 4 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 1 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 4 3 2 1 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs. Drain Current 1.0 6 2.5 2.0 1.5 VGS = 10V, ID = 200mA 5 4 ID = 500mA 3 ID = 50mA 2 1 0 0 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs. Junction Temperature 10 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 400 9 350 Pd, POWER DISSIPATION (mW) VGS, GATE SOURCE CURRENT (V) 5 0 0 5 3.0 1.0 -55 6 8 7 6 5 4 3 2 300 250 200 150 100 50 1 0 0 0.2 0.6 0.8 0.4 ID, DRAIN CURRENT (A) Fig. 5 Typical Transfer Characteristics 2N7002 Document number: DS11303 Rev. 33 - 2 1 3 of 5 www.diodes.com 0 50 75 25 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 6 Max Power Dissipation vs. Ambient Temperature 0 July 2013 (c) Diodes Incorporated 2N7002 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm B C H K M K1 D J F L G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X 2N7002 Document number: DS11303 Rev. 33 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 4 of 5 www.diodes.com July 2013 (c) Diodes Incorporated 2N7002 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2013, Diodes Incorporated www.diodes.com 2N7002 Document number: DS11303 Rev. 33 - 2 5 of 5 www.diodes.com July 2013 (c) Diodes Incorporated