N-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. A.3 - Dec., 2008 www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
APM2300CA
Features
Applications
Pin Description
Ordering and Marking Information
Top View of SOT-23
N-Channel MOSFET
•20V/6A ,
RDS(ON)=25mΩ (typ.) @ VGS=10V
RDS(ON)=32mΩ (typ.) @ VGS=4.5V
RDS(ON)=40mΩ (typ.) @ VGS=2.5V
RDS(ON)=65mΩ (typ.) @ VGS=1.8V
•Super High Dense Cell Design
•Reliable and Rugged
•Lead Free and Green Devices Available
(RoHS Compliant)
•Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
APM2300C
Handling Code
Temperature Range
Package Code
Package Code
A : SOT-23
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM2300C A : C00X X - Date Code
Assembly Material
D
G
S
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
G
S
D
Copyright ANPEC Electronics Corp.
Rev. A.3 - Dec., 2008 www.anpec.com.tw2
APM2300CA
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter Rating Unit
VDSS Drain-Source Voltage 20
VGSS Gate-Source Voltage ±12 V
ID* Continuous Drain Current 6
IDM* 300µs Pulsed Drain Current VGS=10V 20 A
IS* Diode Continuous Forward Current 1 A
TJ Maximum Junction Temperature 150
TSTG Storage Temperature Range -55 to 150 °C
TA=25°C 0.83
PD* Maximum Power Dissipation TA=100°C 0.3 W
RθJA* Thermal Resistance-Junction to Ambient 150 °C/W
Note : *Surface Mounted on 1in2 pad area, t ≤ 10sec.
APM2300CA
Symbol
Parameter Test Conditions Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 20 - - V
VDS=16V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current TJ=85°C
- - 30 µA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 0.5 0.75
1 V
IGSS Gate Leakage Current VGS=±10V, V DS=0V - - ±10
µA
VGS=10V, IDS=6A - 25 30
VGS=4.5V, IDS=3A - 32 40
VGS=2.5V, IDS=2A - 40 55
RDS(ON) a
Drain-Source On-state Resistance
VGS=1.8V, IDS=1A - 65 110
mΩ
VSDa Diode Forward Voltage ISD=1A, VGS=0V - 0.7 1.3 V
Gate Charge Characteristics b
Qg Total Gate Charge - 6 8
Qgs Gate-Source Charge - 0.7 -
Qgd Gate-Drain Charge
VDS=10V, VGS=4.5V,
IDS=6A - 3 -
nC
Copyright ANPEC Electronics Corp.
Rev. A.3 - Dec., 2008 www.anpec.com.tw3
APM2300CA
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
APM2300CA
Symbol
Parameter Test Conditions Min.
Typ.
Max.
Unit
Dynamic Characteristics b
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz
- 6 - Ω
Ciss Input Capacitance - 430
-
Coss Output Capacitance - 110
-
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=10V,
Frequency=1.0MHz - 90 -
pF
td(ON) Turn-on Delay Time - 5 10
tr Turn-on Rise Time - 15 28
td(OFF) Turn-off Delay Time - 26 48
tf Turn-off Fall Time
VDD=10V, RL=10Ω,
IDS=1A, VGEN=4.5V,
RG=6Ω - 15 28
ns
trr Reverse Recovery Time - 21 - ns
Qrr Reverse Recovery Charge ISD=6A, dlSD/dt=100A/µs - 8 - nC
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp.
Rev. A.3 - Dec., 2008 www.anpec.com.tw4
APM2300CA
Typical Operating Characteristics
ID - Drain Current (A)
Drain Current
Tj - Junction Temperature (°C)
Safe Operation Area
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
Power Dissipation
Ptot - Power (W)
Tj - Junction Temperature (°C)
ID - Drain Current (A)
Normalized Transient Thermal Resistance
020 40 60 80 100 120 140 160
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
TA=25oC
020 40 60 80 100 120 140 160
0
1
2
3
4
5
6
7
TA=25oC,VG=10V
0.1 110 100
0.01
0.1
1
10
100
Rds(on) Limit
1s
TA=25oC
10ms
1ms
100ms
DC
1E-4 1E-3 0.01 0.1 110 100
1E-3
0.01
0.1
1
2
Mounted on 1in2 pad
RθJA : 150 oC/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
Copyright ANPEC Electronics Corp.
Rev. A.3 - Dec., 2008 www.anpec.com.tw5
APM2300CA
RDS(ON) - On - Resistance (mΩ)
Drain-Source On Resistance
ID - Drain Current (A)
Tj - Junction Temperature (°C)
Gate Threshold Voltage
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Output Characteristics
Drain-Source On Resistance
VGS - Gate - Source Voltage (V)
RDS(ON) - On - Resistance (mΩ)
Normalized Threshold Voltage
Typical Operating Characteristics (Cont.)
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
2
4
6
8
10
12
14
16
18
20
2V
1.5V
VGS=2.5,3,4,5,6,7,8,9,10V
04812 16 20
0
20
40
60
80
100
120
140
160
VGS=1.8V
VGS=10V
VGS=2.5V
VGS=4.5V
0 1 2 3 4 5 6 7 8 9 10
10
15
20
25
30
35
40
45
50
55
60
ID=6A
-50 -25 025 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6 IDS= 250 µA
Copyright ANPEC Electronics Corp.
Rev. A.3 - Dec., 2008 www.anpec.com.tw6
APM2300CA
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
Normalized On Resistance
Tj - Junction Temperature (°C)
C - Capacitance (pF)
VSD - Source - Drain Voltage (V)
Source-Drain Diode Forward
IS - Source Current (A)
Capacitance Gate Charge
QG - Gate Charge (nC)
VGS - Gate - source Voltage (V)
Typical Operating Characteristics (Cont.)
-50 -25 025 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
RON@Tj=25oC: 25mΩ
VGS = 10V
IDS = 6A
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.1
1
10
20
Tj=150oC
Tj=25oC
0 4 8 12 16 20
0
100
200
300
400
500
600
700
800
Frequency=1MHz
Crss Coss
Ciss
0 2 4 6 8 10 12 14
0
1
2
3
4
5
6
7
8
9
10 VDS =10V
IDS = 6A
Copyright ANPEC Electronics Corp.
Rev. A.3 - Dec., 2008 www.anpec.com.tw7
APM2300CA
Package Information
SOT-23
0
L
VIEW A
0.25
GAUGE PLANE
SEATING PLANE
A
A2A1
e
D
E
E1
SEE
VIEW A
bc
e1
MAX.
0.057
0.051
0.024
0.006
0.009
0.0200.012
L0.30
0
e
e1
E1
E
D
c
b
0.08
0.30
0.60 0.012
0.95 BSC
1.90 BSC
0.22
0.50
0.037 BSC
0.075 BSC
0.003
MIN.
MILLIMETERS
S
Y
M
B
O
L
A1
A2
A
0.00
0.90
SOT-23
MAX.
1.45
0.15
1.30
MIN.
0.000
0.035
INCHES
°
8
°
0
°
8
°
0
1.40
2.60
1.80
3.00
2.70 3.10 0.122
0.071
0.1180.102
0.055
0.106
Note : Dimension D and E1 do not include mold flash, protrusions or gate
burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil
per side.
Copyright ANPEC Electronics Corp.
Rev. A.3 - Dec., 2008 www.anpec.com.tw8
APM2300CA
Application
A H T1 C d D W E1 F
178.0±2.00
50 MIN.
8.4+2.00
-0.00 13.0+0.50
-0.20
1.5 MIN.
20.2 MIN.
8.0±0.30
1.75±0.10
3.5±0.05
P0 P1 P2 D0 D1 T A0 B0 K0
SOT-23
4.0±0.10
4.0±0.10
2.0±0.05
1.5+0.10
-0.00
1.0 MIN.
0.6+0.00
-0.40
3.20±0.20
3.10±0.20
1.50±0.20
(mm)
Carrier Tape & Reel Dimensions
H
T1
A
d
A
E1
A
B
W
F
T
P0
OD0
BA0
P2
K0
B0
SECTION B-B
SECTION A-A
OD1
P1
Devices Per Unit
Package Type Unit Quantity
SOT-23 Tape & Reel 3000
Copyright ANPEC Electronics Corp.
Rev. A.3 - Dec., 2008 www.anpec.com.tw9
APM2300CA
Taping Direction Information
SOT-23
USER DIRECTION OF FEED
Reflow Condition (IR/Convection or VPR Reflow)
t 25 C to Peak
tp
Ramp-up
tL
Ramp-down
ts
Preheat
Tsmax
Tsmin
TL
TP
25
Temperature
Time
Critical Zone
TL to TP
°
Reliability Test Program
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C, 5 sec
HOLT MIL-STD-883D-1005.7 1000 Hrs Bias @125°C
PCT JESD-22-B, A102 168 Hrs, 100%RH, 121°C
TST MIL-STD-883D-1011.9 -65°C~150°C, 200 Cycles
Copyright ANPEC Electronics Corp.
Rev. A.3 - Dec., 2008 www.anpec.com.tw10
APM2300CA
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate
(TL to TP) 3°C/second max. 3°C/second max.
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
- Temperature (TL)
- Time (tL) 183°C
60-150 seconds 217°C
60-150 seconds
Peak/Classification Temperature (Tp)
See table 1 See table 2
Time within 5°C of actual
Peak Temperature (tp) 10-30 seconds 20-40 seconds
Ramp-down Rate 6°C/second max. 6°C/second max.
Time 25°C to Peak Temperature 6 minutes max. 8 minutes max.
Note: All temperatures refer to topside of the package. Measured on the body surface.
Classification Reflow Profiles
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness Volume mm3
<350 Volume mm3
350-2000 Volume mm3
>2000
<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*
1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*
≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated
classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL
level.
Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures
Package Thickness Volume mm3
<350 Volume mm3
≥350
<2.5 mm 240 +0/-5°C 225 +0/-5°C
≥2.5 mm 225 +0/-5°C 225 +0/-5°C
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
