APM2300CA N-Channel Enhancement Mode MOSFET Pin Description Features * 20V/6A , RDS(ON)=25m (typ.) @ VGS=10V D S RDS(ON)=32m (typ.) @ VGS=4.5V G RDS(ON)=40m (typ.) @ VGS=2.5V RDS(ON)=65m (typ.) @ VGS=1.8V * * * Top View of SOT-23 Super High Dense Cell Design D Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G Applications * Power Management in Notebook Computer, Portable Equipment and Battery Powered S Systems N-Channel MOSFET Ordering and Marking Information Package Code A : SOT-23 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device APM2300C Assembly Material Handling Code Temperature Range Package Code APM2300C A : C00X X - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines "Green" to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.3 - Dec., 2008 1 www.anpec.com.tw APM2300CA Absolute Maximum Ratings Symbol (TA = 25C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage 12 ID* Continuous Drain Current IDM* 300s Pulsed Drain Current IS* Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Maximum Power Dissipation RJA* Unit V 6 VGS=10V A 20 1 A 150 C -55 to 150 TA=25C 0.83 TA=100C 0.3 Thermal Resistance-Junction to Ambient W 150 C/W Note : *Surface Mounted on 1in pad area, t 10sec. 2 Electrical Characteristics Symbol Parameter (TA = 25C unless otherwise noted) Test Conditions APM2300CA Min. Typ. Max. 20 - - - - 1 - - 30 Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current V GS(th) IGSS T J=85C A V DS=V GS, IDS=250A 0.5 0.75 1 V Gate Leakage Current V GS=10V, V DS=0V - 10 30 A V GS=10V, IDS=6A 25 V GS=4.5V, IDS=3A - 32 40 V GS=2.5V, IDS=2A - 40 55 V GS=1.8V, IDS=1A - 65 110 ISD=1A, V GS=0V - 0.7 1.3 - 6 8 - 0.7 - - 3 - Diode Forward Voltage Gate Charge Characteristics Qg V DS=16V, V GS=0V V Gate Threshold Voltage R DS(ON) a Drain-Source On-state Resistance V SDa V GS=0V, IDS=250A m V b Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge Copyright ANPEC Electronics Corp. Rev. A.3 - Dec., 2008 V DS=10V, V GS=4.5V, IDS=6A 2 nC www.anpec.com.tw APM2300CA Electrical Characteristics (Cont.) Symbol Parameter Dynamic Characteristics (TA = 25C unless otherwise noted) Test Conditions APM2300CA Unit Min. Typ. Max. - 6 - - 430 - - 110 - - 90 - - 5 10 - 15 28 - 26 48 - 15 28 - 21 - ns - 8 - nC b RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=10V, Frequency=1.0MHz VDD=10V, RL=10, IDS=1A, VGEN=4.5V, RG=6 ISD=6A, dlSD/dt=100A/s pF ns Note a : Pulse test ; pulse width300s, duty cycle2%. Note b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. A.3 - Dec., 2008 3 www.anpec.com.tw APM2300CA Typical Operating Characteristics Drain Current Power Dissipation 1.0 7 0.9 6 ID - Drain Current (A) 0.8 Ptot - Power (W) 0.7 0.6 0.5 0.4 0.3 5 4 3 2 0.2 1 0.1 o TA=25 C,VG=10V o 0.0 TA=25 C 0 20 40 60 0 80 100 120 140 160 60 80 100 120 140 160 Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance Rd s(o n) Lim it ID - Drain Current (A) 40 Tj - Junction Temperature (C) 1ms 1 10ms 100ms 0.1 1s DC o 0.01 20 Tj - Junction Temperature (C) 100 10 0 TA=25 C 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 1E-3 0.01 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.3 - Dec., 2008 2 Mounted on 1in pad o RJA : 150 C/W 0.1 1 10 100 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM2300CA Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 160 20 18 RDS(ON) - On - Resistance (m) ID - Drain Current (A) 140 VGS=2.5,3,4,5,6,7,8,9,10V 16 14 12 2V 10 8 6 4 1.5V 2 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS=1.8V 120 100 80 60 VGS=2.5V 40 VGS=4.5V 20 VGS=10V 0 3.0 0 4 8 12 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage IDS= 250A ID=6A 55 1.4 Normalized Threshold Voltage RDS(ON) - On - Resistance (m) 20 1.6 60 50 45 40 35 30 25 20 1.2 1.0 0.8 0.6 0.4 0.2 15 10 16 0 1 2 3 4 5 6 7 8 9 0.0 -50 -25 10 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.3 - Dec., 2008 0 25 50 75 100 125 150 Tj - Junction Temperature (C) 5 www.anpec.com.tw APM2300CA Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.0 20 VGS = 10V IDS = 6A 10 1.6 1.4 IS - Source Current (A) Normalized On Resistance 1.8 1.2 1.0 0.8 0.6 0.4 o Tj=150 C o Tj=25 C 1 0.2 o RON@Tj=25 C: 25m 0.0 -50 -25 0 25 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 75 100 125 150 Tj - Junction Temperature (C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 800 10 Frequency=1MHz VGS - Gate - source Voltage (V) 700 C - Capacitance (pF) 600 500 Ciss 400 300 200 Coss Crss 100 0 VDS =10V 9 0 4 8 12 16 6 5 4 3 2 1 0 2 4 6 8 10 12 14 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.3 - Dec., 2008 7 0 20 IDS = 6A 8 6 www.anpec.com.tw APM2300CA Package Information SOT-23 D e E E1 SEE VIEW A c b 0.25 A L GAUGE PLANE SEATING PLANE 0 A1 A2 e1 VIEW A S Y M B O L SOT-23 INCHES MILLIMETERS MIN. MIN. MAX. MAX. A 1.45 A1 0.00 0.15 0.000 0.006 A2 0.90 1.30 0.035 0.051 b 0.30 0.50 0.012 0.020 c 0.08 0.22 0.003 0.009 D 2.70 3.10 0.106 0.122 E 2.60 3.00 0.102 0.118 E1 1.40 1.80 0.055 0.071 e 0.95 BSC e1 1.90 BSC 0.057 0.037 BSC 0.075 BSC L 0.30 0.60 0 0 8 0.012 0 0.024 8 Note : Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil per side. Copyright ANPEC Electronics Corp. Rev. A.3 - Dec., 2008 7 www.anpec.com.tw APM2300CA Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 A OD1 B B T SECTION A-A SECTION B-B H A d T1 Application A H 178.0 2.00 50 MIN. SOT-23 P0 4.00.10 T1 P1 4.00.10 C d D 8.4+2.00 13.0+0.50 1.5 MIN. -0.00 -0.20 P2 2.00.05 D0 20.2 MIN. D1 T 1.5+0.10 1.0 MIN. -0.00 W E1 8.00.30 1.750.10 A0 B0 F 3.50.05 K0 0.6+0.00 3.200.20 3.100.20 1.500.20 -0.40 (mm) Devices Per Unit Package Type Unit Quantity SOT-23 Tape & Reel 3000 Copyright ANPEC Electronics Corp. Rev. A.3 - Dec., 2008 8 www.anpec.com.tw APM2300CA Taping Direction Information SOT-23 USER DIRECTION OF FEED Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone TL to TP Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat t 25 C to Peak 25 Time Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD-883D-1005.7 JESD-22-B, A102 MIL-STD-883D-1011.9 Copyright ANPEC Electronics Corp. Rev. A.3 - Dec., 2008 9 Description 245C, 5 sec 1000 Hrs Bias @125C 168 Hrs, 100%RH, 121C -65C~150C, 200 Cycles www.anpec.com.tw APM2300CA Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classification Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3C/second max. 3C/second max. 100C 150C 60-120 seconds 150C 200C 60-180 seconds 183C 60-150 seconds 217C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6C/second max. 6C/second max. 6 minutes max. Time 25C to Peak Temperature Note: All temperatures refer to topside of the package. Measured on the body surface. 8 minutes max. Table 1. SnPb Eutectic Process - Package Peak Reflow Temperatures 3 Package Thickness Volume mm <350 <2.5 mm 2.5 mm 240 +0/-5C 225 +0/-5C Volume mm 350 3 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Temperatures Package Thickness Volume mm <350 3 3 Volume mm 350-2000 Volume mm >2000 3 <1.6 mm 260 +0C* 260 +0C* 260 +0C* 1.6 mm - 2.5 mm 260 +0C* 250 +0C* 245 +0C* 2.5 mm 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL level. Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 2F, No. 11, Lane 218, Sec 2 Jhongsing Rd., Sindain City, Taipei County 23146, Taiwan Tel : 886-2-2910-3838 Fax : 886-2-2917-3838 Copyright ANPEC Electronics Corp. Rev. A.3 - Dec., 2008 10 www.anpec.com.tw