Ver. BED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: December 2010 1
DRA3144W
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC3144W
DRA9144W in SSSMini3 type package
Features
Low collector-emitter saturation voltage VCE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO –50 V
Collector-emitter voltage (Base open) VCEO –50 V
Collector current IC–100 mA
Total power dissipation PT100 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = –10 µA, IE = 0 –50 V
Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V
Collector-base cutoff current (Emitter open) ICBO VCB = –50 V, IE = 0 – 0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = –50 V, IB = 0 – 0.5 µA
Emitter-base cutoff current (Collector open) IEBO VEB = –6 V, IC = 0 – 0.2 mA
Forward current transfer ratio hFE VCE = –10 V, IC = –5 mA 60
Collector-emitter saturation voltage VCE(sat) IC = –10 mA, IB = – 0.5 mA – 0.25 V
Input voltage (ON) VI(on) VCE = – 0.2 V, IC = –5 mA –4.4 V
Input voltage (OFF) VI(off) VCE = –5 V, IC = –100 µA –1.2 V
Input resistance R1–30% 47 +30% kΩ
Resistance ratio R1 / R21.70 2.14 2.60
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
SSSMini3-F2-B
Pin Name
1: Base
2: Emitter
3: Collector
Marking Symbol: LK
Internal Connection
C
B
R1
R2
E
Resistance value R147 kΩ
R222 kΩ
Ver. BED
This product complies with the RoHS Directive (EU 2002/95/EC).
DRA3144W
2
PT Ta IC VCE hFE IC
VCE(sat) IC IO VIN VIN IO
00 20016040 12080
25
100
75
50
150
125
DRA3144W_PT-Ta
Ambient temperature Ta (°C)
Total power dissipation PT (mW)
00−12−2−10−4−8−6
−120
−100
−80
−60
−40
−20
DRA3144W_IC-VCE
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Ta = 25°C
IB = −800 µA−700 µA
−600 µA
−500 µA
−400 µA
−100 µA
−200 µA
−300 µA
0
− 0.1
300
250
200
150
100
50
−1−10 −100
DRA3144W_hFE-IC
Forward current transfer ratio hFE
Collector current IC (mA)
25°C
−30°C
Ta = 85°C
VCE = −10 V
− 0.01
− 0.1
− 0.1
−1
−10
−1−10 −100
DRA3144W_VCEsat-IC
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
−30°C
Ta = 85°C
IC / IB = 20
25°C
0−4−3−2−1
−10−3
−10−1
−10−2
−10
−1
DRA3144W_IO-VIN
Input voltage VIN (V)
Output current IO (mA)
25°C
−30°C
Ta = 85°C
VO = −5 V
− 0.1
− 0.1
−1
−10
−100
−1−10 −100
DRA3144W_VIN-IO
Input voltage VIN (V)
Output current IO (mA)
VO = − 0.2 V
25°C
85°C
Ta = −30°C
Ver. BED
This product complies with the RoHS Directive (EU 2002/95/EC).
DRA3144W
3
SSSMini3-F2-B Unit: mm
0.30 +0.05
−0.02
0.20 +0.05
−0.02 0.13 +0.05
−0.02
(0.4)
(0.4)
0.80 ±0.05
0.80 ±0.05
0.52 ±0.03
1.20 ±0.05
1.20 ±0.05
0.20 ±0.05
3
12
(0.27)
0 to 0.05
(5°)
(5°)
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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