RQ3E100MNTB1 - ROHM Semiconductor

Datasheet

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RQ3E100MN

Nch 30V 10A Power MOSFET

Junction temperature

Tj

150

°C

Range of storage temperature

Tstg

-55 to +150

°C

Power dissipation

Gate - Source voltage

VGSS

20

V

PD

*3

2.0

W

Continuous drain current

ID

*1

10

A

Pulsed drain current

ID,pulse

*2

40

A

Drain - Source voltage

VDSS

30

V

Taping code

TB1

Marking

E100MN

lAbsolute maximum ratings(Ta = 25°C) ,unless otherwise specified

Parameter

Symbol

Value

Unit

lPackaging specifications

Type

Packaging

Taping

lApplication

Reel size (mm)

330

DC/DC converters

Tape width (mm)

12

Basic ordering unit (pcs)

3,000

lFeatures

lInner circuit

1) Low on - resistance.

2) High Power Small Mold Package (HSMT8).

3) Pb-free lead plating ; RoHS compliant

4) Halogen Free

5) 100% Rg and UIS Tested

lOutline

VDSS

30V

HSMT8

ID

10A

PD

2.0W

RDS(on) at 4.5V (Max.)

16.8mW

RDS(on) at 10V (Max.)

12.3mW

*1 ESD PROTECTION DIODE

*2 BODY DIODE

(1) Source

(2) Source

(3) Source

(4) Gate

(5) Drain

(6) Drain

(7) Drain

(8) Drain

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2013.02 - Rev.A

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Data Sheet

RQ3E100MN

*1 Limited only by maximum temperature allowed.

*2 Pw  10ms, Duty cycle  1%

*3 Mounted on a ceramic board. (30×30×0.8mm)

*4 Pulsed

-

S

Transconductance

gfs *4

VDS=10V, ID=10A

8.0

-

5.8

-

mW

VGS=4.5V, ID=10A

12.3

-

12

16.8

V

Gate threshold voltage

VGS (th)

VDS = 10V, ID = 1mA

1.0

-

2.5

mA

Gate - Source leakage current

IGSS

VGS = 20V, VDS = 0V

-

10

mA

Zero gate voltage drain current

IDSS

VDS = 30V, VGS = 0V

-

1

Min.

Typ.

Max.

V

Drain - Source breakdown

voltage

V(BR)DSS

VGS = 0V, ID = 1mA

30

-

mV/°C

lThermal resistance

Parameter

Symbol

Values

Unit

Min.

Typ.

Max.

lElectrical characteristics(Ta = 25°C) ,unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

Breakdown voltage

temperature coefficient

ΔV(BR)DSS

ΔTj

ID=1mA

referenced to 25°C

-

33.7

-

mV/°C

Gate input resistannce

RG

W

Gate threshold voltage

temperature coefficient

ΔV(GS)th

ΔTj

ID=1mA

referenced to 25°C

-

-4.6

Static drain - source

on - state resistance

RDS(on)

*4

VGS=10V, ID=10A

-

8.8

f = 1MHz, open drain

Thermal resistance, junction - ambient

RthJA

*3

-

62.5

°C/W

RthJC

-

°C/W

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Data Sheet

RQ3E100MN

VGS = 0V, Is = 1.67A

-

10

A

lGate Charge characteristics(Ta = 25C)

Parameter

Symbol

Conditions

Values

V

lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

-

1.2

Ta = 25°C

Forward voltage

VSD

*4

-

Inverse diode continuous,

forward current

IS *1

-

7

-

ns

Rise time

tr

*4

ID = 5A

-

17

-

Turn - off delay time

td(off)

*4

RL = 3.0W

-

31

-

Fall time

tf

*4

RG = 10W

-

6

-

Ciss

VGS = 0V

Output capacitance

Coss

VDS = 15V

Turn - on delay time

td(on)

*4

VDD ⋍ 15V, VGS = 10V

-

1.6

lElectrical characteristics(Ta = 25°C)

Parameter

Symbol

Conditions

Values

-

185

Unit

Min.

Typ.

Max.

pF

-

520

-

50

-

Reverse transfer capacitance

Crss

f = 1MHz

Input capacitance

-

Unit

Min.

Typ.

Max.

Total gate charge

Qg

*4

VDD ⋍ 15V, ID=10A

VGS = 10V

-

9.9

-

nC

VDD ⋍ 15V, ID=10A

VGS = 4.5V

-

5

-

Gate - Source charge

Qgs

*4

-

2.1

-

Gate - Drain charge

Qgd

*4

-

Reverse recovery time

trr

*4

IS=10A

di/dt=100A/ms

-

22.8

-

ns

Reverse recovery charge

Qrr

*4

-

14.8

-

mC

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Data Sheet

RQ3E100MN

lElectrical characteristic curves

1

10

100

1000

10000

0.0001 0.001 0.01 0.1 1 10 100 1000

Ta=25ºC

Single Pulse

0.01

0.1

1

10

100

0.1 1 10 100

Ta=25ºC

Single Pulse

Mounted on a ceramic board.

(30mm × 30mm × 0.8mm)

Operation in this area

is limited by RDS(on)

(VGS = 10V)

PW = 100ms

PW = 1ms

PW = 10ms

DC Operation

0

20

40

60

80

100

120

050 100 150 200

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

top D = 1

D = 0.5

D = 0.1

D = 0.05

D = 0.01

bottom Single

Ta=25ºC

Rth(ch-a)=62.5ºC/W

Rth(ch-a)(t)=r(t)×Rth(ch-a)

Mounted on a ceramic board.

(30mm × 30mm × 0.8mm)

Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area

Power Dissipation : PD/PD max. [%]

Drain Current : ID [A]

Fig.3 Normalized Transient Thermal

Resistance vs. Pulse Width

Fig.4 Single Pulse Maximum

Power dissipation

Normalized Transient Thermal Resistance : r(t)

Pulse Width : PW [s] Pulse Width : PW [s]

Peak Transient Power : P(W)

Drain - Source Voltage : VDS [V]

Junction Temperature : Tj [°C]

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Data Sheet

RQ3E100MN

lElectrical characteristic curves

0

2

4

6

8

10

0 0.2 0.4 0.6 0.8 1

Ta=25ºC

Pulsed

VGS= 2.5V

VGS= 10V

VGS= 4.0V

VGS= 3.0V

VGS= 4.5V

VGS= 3.5V

VGS= 2.8V

0

20

40

60

-50 0 50 100 150

VGS = 0V

ID = 1mA

Pulsed

0.001

0.01

0.1

1

10

100

0 0.5 1 1.5 2 2.5 3 3.5

VDS= 10V

Pulsed

Ta= 125ºC

Ta= 75ºC

Ta= 25ºC

Ta= -25ºC

0

2

4

6

8

10

0 2 4 6 8 10

Ta=25ºC

Pulsed

VGS= 2.5V

VGS= 10V

VGS= 4.0V

VGS= 3.0V

VGS= 4.5V

VGS= 3.5V

VGS= 2.8V

Fig.5 Typical Output Characteristics(I)

Drain Current : ID [A]

Drain - Source Voltage : VDS [V]

Fig.6 Typical Output Characteristics(II)

Drain Current : ID [A]

Drain - Source Voltage : VDS [V]

Fig.7 Breakdown Voltage

vs. Junction Temperature

Drain - Source Breakdown Voltage : V(BR)DSS [V]

Junction Temperature : Tj [°C]

Fig.8 Typical Transfer Characteristics

Gate - Source Voltage : VGS [V]

Drain Current : ID [A]

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Data Sheet

RQ3E100MN

lElectrical characteristic curves

0

1

2

3

-50 0 50 100 150

VDS = 10V

ID = 1mA

Pulsed

0.01

0.1

1

10

100

0.001 0.01 0.1 1 10 100

Ta= -25ºC

Ta=25ºC

Ta=75ºC

Ta=125ºC

VDS= 10V

Pulsed

0

0.2

0.4

0.6

0.8

1

1.2

-25 0 25 50 75 100 125 150

0

10

20

30

40

50

0 2 4 6 8 10

ID = 10A

ID = 5A

Ta=25ºC

Pulsed

Fig.9 Gate Threshold Voltage

vs. Junction Temperature

Gate Threshold Voltage : VGS(th) [V]

Junction Temperature : Tj [°C]

Fig.10 Transconductance vs. Drain Current

Transconductance : gfs [S]

Drain Current : ID [A]

Fig.11 Drain Current Derating Curve

Drain Current Dissipation

: ID/ID max. (%)

Junction Temperature : Tj [ºC]

Fig.12 Static Drain - Source On - State

Resistance vs. Gate Source Voltage

Static Drain - Source On-State Resistance

: RDS(on) [mW]

Gate - Source Voltage : VGS [V]

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Data Sheet

RQ3E100MN

lElectrical characteristic curves

0

2

4

6

8

10

12

14

16

18

20

-50 -25 0 25 50 75 100 125 150

VGS = 10V

ID = 10A

Pulsed

1

10

100

0.1 1 10

Ta=125ºC

Ta=75ºC

Ta=25ºC

Ta= -25ºC

VGS= 10V

Pulsed

1

10

100

0.1 1 10

VGS= 4.5V

Pulsed Ta=125ºC

Ta=75ºC

Ta=25ºC

Ta= -25ºC

Fig.13 Static Drain - Source On - State

Resistance vs. Drain Current(I)

Static Drain - Source On-State Resistance

: RDS(on) [mW]

Junction Temperature : Tj [ºC]

Fig.14 Static Drain - Source On - State

Resistance vs. Junction Temperature

Static Drain - Source On-State Resistance

: RDS(on) [mW]

Drain Current : ID [A]

Fig.15 Static Drain - Source On - State

Resistance vs. Drain Current(II)

Static Drain - Source On-State Resistance

: RDS(on) [mW]

Drain Current : ID [A]

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Data Sheet

RQ3E100MN

lElectrical characteristic curves

1

10

100

1000

10000

0.01 0.1 1 10 100

Coss

Crss

Ciss

Ta = 25ºC

f = 1MHz

VGS = 0V

0

2

4

6

8

10

0246810

Ta=25ºC

VDD= 30V

ID= 10A

RG=10W

Pulsed

0.01

0.1

1

10

100

0 0.5 1

VGS=0V

Pulsed

Ta=125ºC

Ta=75ºC

Ta=25ºC

Ta= -25ºC

1

10

100

1000

10000

0.01 0.1 1 10 100

tr

tf

td(on)

td(off)

Ta=25ºC

VDD= 15V

VGS= 10V

RG=10W

Pulsed

Fig.16 Typical Capacitance

vs. Drain - Source Voltage

Capacitance : C [pF]

Drain - Source Voltage : VDS [V]

Fig.17 Switching Characteristics

Switching Time : t [ns]

Drain Current : ID [A]

Fig.18 Dynamic Input Characteristics

Gate - Source Voltage : VGS [V]

Total Gate Charge : Qg [nC]

Fig.19 Source Current

vs. Source Drain Voltage

Source Current : IS [A]

Source-Drain Voltage : VSD [V]

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Data Sheet

RQ3E100MN

lMeasurement circuits

Fig.1-1 Switching Time Measurement Circuit

Fig.1-2　Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

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Data Sheet

RQ3E100MN

lDimensions (Unit : mm)

Dimension in mm/inches

HSMT8

Patterm of terminal position areas

[Not a recommended pattern of soldering pads]

▼

y

S

b1

Lp

Lp1

Lp2

HD

D

E

HE

L1

L

e

b

A

x

S

A

c

A1

l1

b2

e

b3

l2

l3

l4

MIN MAX MIN MAX

A 0.70 0.90 0.028 0.035

A1 0.00 0.05 0.000 0.002

b 0.27 0.37 0.011 0.015

b1 2.50 2.70 0.098 0.106

c 0.10 0.30 0.004 0.012

D 3.10 3.30 0.122 0.130

E 2.90 3.10 0.114 0.122

e

HD3.20 3.40 0.126 0.134

HE3.20 3.40 0.126 0.134

L 0.07 0.25 0.003 0.010

L1 0.07 0.25 0.003 0.010

Lp 0.20 0.40 0.008 0.016

Lp1 0.25 0.45 0.010 0.018

Lp2 2.20 2.40 0.087 0.094

x - 0.10 - 0.004

y - 0.10 - 0.004

MIN MAX MIN MAX

b2 - 0.47 - 0.019

b3 - 2.70 - 0.106

l1 - 0.50 - 0.020

l2 - 0.55 - 0.022

l3 - 2.40 - 0.094

l4 - 3.40 - 0.134

DIM

MILIMETERS

INCHES

DIM

MILIMETERS

INCHES

0.65

0.026

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More detail product informations and catalogs are available, please contact us.

Notes

The information contained herein is subject to change without notice.

Before you use our Products, please contact our sales representative

and verify the latest specifica-

tions :

Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to var ious factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

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The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-

cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in

this document.

The Products specified in this document are not designed to be radiation tolerant.

For use of our Products in applications requiring a high degree of reliability (as exemplified

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Do not use our Products in applications requiring extremely high reliability, such as aerospace

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ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

ROHM has used reasonable care to ensur the accuracy of the information contained in this

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shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

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When providing our Products and technologies contained in this document to other countries,

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