VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
RE
C
TIFIER
S
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright © 2008
2-25-2008 REV A
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5807CB thru 1N5811CB
1N5807CB–1N5811CB
DESCRIPTION APPEARANCE
This “Ultrafast Recovery” rectifier diode serie s is militar y qualified to MIL-PRF-19500/7 42 and
is ideal for high-reliability applications where a failure cannot be tolerated. These industry-
recognized 6.0 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts
are hermetically sealed with voidless-glass construction using an internal “Category III”
metallurgical bond. These devices are also available in surface mount MELF package
configurations by adding a “US” suffix (see separate data sheet for 1N5807CBUS thru
1N5811CBUS). Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various rec overy time speed requirements including stand ard, fast
and ultrafast device types in both through-hole and surface mount packages.
“E” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENEFITS
Popular JEDEC registered 1N5807 to 1N5811 series
Voidless hermetically s ealed glass package
Extremely robust construction
Triple-layer passivation
Internal Category III” Metallurgical bonds
JAN, JANTX, & JANTXV available per MIL-PRF-19500/742
Further screening options are available for JANS in
accordance with MIL-PRF-19500/742 by using a “SP” prefix
Surface mount equivalents also avai lable in a square end-
cap MELF configuration with “US” suffix (see separate data
sheet for 1N5807CBUS thru 1N5811CBUS)
Ultrafast recovery 6 Amp rectifier series 50 to 150 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Micr osemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
Junction Temperature: -65oC to +175oC
Storage Temperature: -65oC to +175oC
Average Rectified For ward Current (IO): 6 A @ TL = 75ºC
at 3/8 inch lead length (see note 1)
Thermal Resistance: 22 ºC/W junctio n to lea d (L= .375 in)
Thermal Impedance: 1.5 ºC/W @ 10 ms heating time
Forward Surge Current (8.3 ms half sine) 125 Amps
Capacitance: 60 pF at 10 volts, f = 1 MHz
Solder temperature: 260ºC for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
TERMINATIONS: Axial-le ads are Tin/Lead (Sn/Pb)
over Copper.
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 750 mg
See package dimensions on l ast page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
BREAKDOWN
VOLTAGE
(MIN.)
@ 100μA
VBR
AVERAGE
RECTIFIED
CURRENT
IO1
@TL=75ºC
(Note 1)
AVERAGE
RECTIFIED
CURRENT
IO2
@TA=55ºC
Note 2
MAXIMUM
FORWARD
VOLTAGE
@ 4 A
(8.3 ms pulse)
VF
REVERSE
CURRENT
(MAX)
@ VRWM
IR
SURGE
CURRENT
(MAX)
IFSM
(NOTE 3)
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
trr
VOLTS VOLTS AMPS VOLTS μA AMPS ns
25oC 100oC 25oC 125oC
1N5807CB
1N5809CB
1N5811CB
50
100
150
60
110
160
6.0
6.0
6.0
3.0
3.0
3.0
0.875
0.875
0.875
0.800
0.800
0.800
5
5
5
525
525
525
125
125
125
30
30
30
NOTE 1: Rated at TL = 75ºC at 3/8 inch lead length. Derate at 60 mA/ºC for TL above 75ºC.
NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175ºC
NOTE 3: TA = 25oC @ IO = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/µs min
VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
RE
C
TIFIER
S
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5807CB thru 1N5811CB
1N5807CB–1N5811CB
SYMBOLS & DEFINITIONS
Symbol Definition
VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM Working Peak Reverse Voltage: The maximum peak vo ltage that can be applied over the operating
temperature range.
VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
GRAPHS
FIGURE 1 FIGURE 2
TYPICAL FORWARD CURRENT TYPICAL REVERSE CURRENT v s. VOLTAGE
vs. FORWARD VOLTA GE
FIGURE 3 FIGURE 4
OUTPUT CURRE NT vs LEAD TEMPERAT U RE FORWARD PULSE CUR RENT vs. DURATION
Microsemi
Scottsdale Division Page 2
Copyright © 2008
2-25-2008 REV A 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
RE
C
TIFIER
S
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5807CB thru 1N5811CB
1N5807CB–1N5811CB
FIGURE 6 FIGURE 7
MAXIMUM LEAD TEMP. vs. PD MULTIPLE SURGE CURRENT vs. DURATION
PACKAGE DIMEN SIONS
Lead Tolerance = + .002 -. 003 in
*Includes sections of the lead or fillet over which the l ead diameter is uncontrolled.
Microsemi
Scottsdale Division Page 3
Copyright © 2008
2-25-2008 REV A 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503