1N5807CB thru 1N5811CB VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This "Ultrafast Recovery" rectifier diode series is military qualified to MIL-PRF-19500/742 and is ideal for high-reliability applications where a failure cannot be tolerated. These industryrecognized 6.0 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using an internal "Category III" metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a "US" suffix (see separate data sheet for 1N5807CBUS thru 1N5811CBUS). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages. "E" Package IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS Popular JEDEC registered 1N5807 to 1N5811 series Voidless hermetically sealed glass package Extremely robust construction Triple-layer passivation Internal "Category III" Metallurgical bonds JAN, JANTX, & JANTXV available per MIL-PRF-19500/742 Further screening options are available for JANS in accordance with MIL-PRF-19500/742 by using a "SP" prefix * Surface mount equivalents also available in a square endcap MELF configuration with "US" suffix (see separate data sheet for 1N5807CBUS thru 1N5811CBUS) * Ultrafast recovery 6 Amp rectifier series 50 to 150 V * Military and other high-reliability applications * Switching power supplies or other applications requiring extremely fast switching & low forward loss * High forward surge current capability * Low thermal resistance * Controlled avalanche with peak reverse power capability * Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING * * * * * * * * Junction Temperature: -65 C to +175 C * Storage Temperature: -65oC to +175oC * Average Rectified Forward Current (IO): 6 A @ TL = 75C at 3/8 inch lead length (see note 1) * Thermal Resistance: 22 C/W junction to lead (L=.375 in) * Thermal Impedance: 1.5 C/W @ 10 ms heating time * Forward Surge Current (8.3 ms half sine) 125 Amps * Capacitance: 60 pF at 10 volts, f = 1 MHz * Solder temperature: 260C for 10 s (maximum) o o * * * * * * * WWW . Microsemi .C OM DESCRIPTION CASE: Hermetically sealed voidless hard glass with Tungsten slugs TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb) over Copper. MARKING: Body painted and part number, etc. POLARITY: Cathode indicated by band Tape & Reel option: Standard per EIA-296 Weight: 750 mg See package dimensions on last page ELECTRICAL CHARACTERISTICS TYPE NOTE 3: NOTE 4: AVERAGE RECTIFIED CURRENT IO1 @TL=75C (Note 1) AMPS AVERAGE RECTIFIED CURRENT IO2 @TA=55C Note 2 MAXIMUM FORWARD VOLTAGE @4A (8.3 ms pulse) VF REVERSE CURRENT (MAX) @ VRWM IR SURGE CURRENT (MAX) IFSM (NOTE 3) REVERSE RECOVERY TIME (MAX) (NOTE 4) trr VOLTS AMPS ns A o o o o 25 C 100 C 25 C 125 C 50 60 6.0 3.0 0.875 0.800 5 525 125 30 100 110 6.0 3.0 0.875 0.800 5 525 125 30 150 160 6.0 3.0 0.875 0.800 5 525 125 30 Rated at TL = 75C at 3/8 inch lead length. Derate at 60 mA/C for TL above 75C. Derate linearly at 25 mA/C above TA = 55C. This rating is typical for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175C o TA = 25 C @ IO = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/s min VOLTS 1N5807CB 1N5809CB 1N5811CB NOTE 1: NOTE 2: BREAKDOWN VOLTAGE (MIN.) @ 100A VBR Copyright (c) 2008 2-25-2008 REV A VOLTS Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N5807CB-1N5811CB WORKING PEAK REVERSE VOLTAGE VRWM 1N5807CB thru 1N5811CB SCOTTSDALE DIVISION VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS SYMBOLS & DEFINITIONS VBR VRWM VF IR C trr Definition Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current is reached. WWW . Microsemi .C OM Symbol GRAPHS FIGURE 1 TYPICAL FORWARD CURRENT vs. FORWARD VOLTAGE FIGURE 2 TYPICAL REVERSE CURRENT vs. VOLTAGE Copyright (c) 2008 2-25-2008 REV A FIGURE 4 FORWARD PULSE CURRENT vs. DURATION Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 1N5807CB-1N5811CB FIGURE 3 OUTPUT CURRENT vs LEAD TEMPERATURE 1N5807CB thru 1N5811CB SCOTTSDALE DIVISION VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS WWW . Microsemi .C OM FIGURE 6 MAXIMUM LEAD TEMP. vs. PD FIGURE 7 MULTIPLE SURGE CURRENT vs. DURATION PACKAGE DIMENSIONS 1N5807CB-1N5811CB Lead Tolerance = + .002 -.003 in *Includes sections of the lead or fillet over which the lead diameter is uncontrolled. Copyright (c) 2008 2-25-2008 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3