MPS2222A ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL Transition Frequency fT Output Capacitance Cobo Input Capacitance MIN. TYP. MAX. 300 UNIT CONDITIONS. MHz IC=20mA, VCE=20V f=100MHz 8 pF VCB=10V, IE=0, f=140KHz Cibo 25 pF VEB=0.5V, IC=0 f=140KHz Delay Time td 10 ns Rise Time tr 25 ns Storage Time ts 225 ns Fall Time tf 60 ns VCE=30V, VBE(off)=0.5V IC=150mA, IB1=15mA (See Delay Test Circuit) VCE=30V, IC=150mA IB1= IB2=15mA (See Storage Test Circuit) DELAY AND RISE TEST CIRCUIT +30V Generator rise time <2ns Pulse width (t1)<200ns Duty cycle = 2% 0 200 Scope: Rin > 100 k Cin < 12 pF Rise Time < 5 ns 0.5V STORAGE TIME AND FALL TIME TEST CIRCUIT +30V =100s <5ns 200 +16.2 V 0 1K Scope: R > 100 k C < 12 pF Rise Time < 5 ns in 1N916 -13.8 V =500s Duty cycle = 2% in -3V MPS2222A ISSUE 2 APRIL 94 FEATURES * 40 Volt VCEO * Fast switching C B E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Continuous Collector Current IC 800 mA Power Dissipation at Tamb=25C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 C PARAMETER SYMBOL MIN. MAX. Collector-Base Breakdown Voltage V(BR)CBO 75 V IC=10A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=10A, IC=0 Collector Cut-Off Current ICBO 10 10 A nA VCB=60V, IE=0 VCB=60V, IE=0, Tamb=150C Emitter Cut-Off Current IEBO 10 nA VEB=3V, IC=0 Collector-Emitter Cut-Off Current ICEX 10 nA VCE=60V, VEB(off)=3V Collector-Emitter Saturation Voltage VCE(sat) 0.3 1.0 V V IC=150mA, IB=15mA* IC=500mA, IB=50mA* Base-Emitter Saturation Voltage VBE(sat) 0.6 1.2 2.0 V V IC=150mA, IB=15mA* IC=500mA, IB=50mA* Static Forward Current Transfer Ratio hFE 35 50 75 35 100 50 40 300 UNIT CONDITIONS. IC=0.1mA, VCE=10V* IC=1mA, VCE=10V IC=10mA, VCE=10V* IC=10mA, VCE=10V, Tamb=-55C IC=150mA, VCE=10V* IC=150mA, VCE=1V* IC=500mA, VCE=10V* *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-67 E ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). 619 9.9V NPN SILICON PLANAR SWITCHING TRANSISTOR 3-66 MPS2222A ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL Transition Frequency fT Output Capacitance Cobo Input Capacitance MIN. TYP. MAX. 300 UNIT CONDITIONS. MHz IC=20mA, VCE=20V f=100MHz 8 pF VCB=10V, IE=0, f=140KHz Cibo 25 pF VEB=0.5V, IC=0 f=140KHz Delay Time td 10 ns Rise Time tr 25 ns Storage Time ts 225 ns Fall Time tf 60 ns VCE=30V, VBE(off)=0.5V IC=150mA, IB1=15mA (See Delay Test Circuit) VCE=30V, IC=150mA IB1= IB2=15mA (See Storage Test Circuit) DELAY AND RISE TEST CIRCUIT +30V Generator rise time <2ns Pulse width (t1)<200ns Duty cycle = 2% 0 200 Scope: Rin > 100 k Cin < 12 pF Rise Time < 5 ns 0.5V STORAGE TIME AND FALL TIME TEST CIRCUIT +30V =100s <5ns 200 +16.2 V 0 1K Scope: R > 100 k C < 12 pF Rise Time < 5 ns in 1N916 -13.8 V =500s Duty cycle = 2% in -3V MPS2222A ISSUE 2 APRIL 94 FEATURES * 40 Volt VCEO * Fast switching C B E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Continuous Collector Current IC 800 mA Power Dissipation at Tamb=25C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 C PARAMETER SYMBOL MIN. MAX. Collector-Base Breakdown Voltage V(BR)CBO 75 V IC=10A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=10A, IC=0 Collector Cut-Off Current ICBO 10 10 A nA VCB=60V, IE=0 VCB=60V, IE=0, Tamb=150C Emitter Cut-Off Current IEBO 10 nA VEB=3V, IC=0 Collector-Emitter Cut-Off Current ICEX 10 nA VCE=60V, VEB(off)=3V Collector-Emitter Saturation Voltage VCE(sat) 0.3 1.0 V V IC=150mA, IB=15mA* IC=500mA, IB=50mA* Base-Emitter Saturation Voltage VBE(sat) 0.6 1.2 2.0 V V IC=150mA, IB=15mA* IC=500mA, IB=50mA* Static Forward Current Transfer Ratio hFE 35 50 75 35 100 50 40 300 UNIT CONDITIONS. IC=0.1mA, VCE=10V* IC=1mA, VCE=10V IC=10mA, VCE=10V* IC=10mA, VCE=10V, Tamb=-55C IC=150mA, VCE=10V* IC=150mA, VCE=1V* IC=500mA, VCE=10V* *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-67 E ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). 619 9.9V NPN SILICON PLANAR SWITCHING TRANSISTOR 3-66