BUF634PG4 - Texas Instruments - searchdatasheet.com

BUF634

FEATURES

●HIGH OUTPUT CURRENT: 250mA

●SLEW RATE: 2000V/µs

●PIN-SELECTED BANDWIDTH:

30MHz to 180MHz

●LOW QUIESCENT CURRENT:

1.5mA (30MHz BW)

●WIDE SUPPLY RANGE: ±2.25 to ±18V

●INTERNAL CURRENT LIMIT

●THERMAL SHUTDOWN PROTECTION

●8-PIN DIP, SO-8, 5-LEAD TO-220, 5-LEAD

DDPAK SURFACE-MOUNT

V–

V+

8-Pin DIP Package

SO-8 Surface-Mount Package

G = 1

APPLICATIONS

●VALVE DRIVER

●SOLENOID DRIVER

●OP AMP CURRENT BOOSTER

●LINE DRIVER

●HEADPHONE DRIVER

●VIDEO DRIVER

●MOTOR DRIVER

●TEST EQUIPMENT

●ATE PIN DRIVER

DESCRIPTION

The BUF634 is a high speed unity-gain open-loop

buffer recommended for a wide range of applications.

It can be used inside the feedback loop of op amps to

increase output current, eliminate thermal feedback

and improve capacitive load drive.

For low power applications, the BUF634 operates

on 1.5mA quiescent current with 250mA output,

2000V/µs slew rate and 30MHz bandwidth. Band-

width can be adjusted from 30MHz to 180MHz by

connecting a resistor between V– and the BW Pin.

Output circuitry is fully protected by internal current

limit and thermal shut-down making it rugged and

easy to use.

The BUF634 is available in a variety of packages to

suit mechanical and power dissipation requirements.

Types include 8-pin DIP, SO-8 surface-mount, 5-lead

TO-220, and a 5-lead DDPAK surface-mount plastic

power package.

250mA HIGH-SPEED BUFFER

BUF634

G = 1 G = 1

V–V

V+

12345

5-Lead

TO-220

V–V

V+

12345

NOTE: Tabs are connected

to V– supply.

5-Lead DDPAK

Surface Mount

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Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132

SBOS030

BUF634

SPECIFICATIONS

ELECTRICAL

The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN

assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject

to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not

authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.

V+

V–

V+

V–

✻ Specifications the same as Low Quiescent Mode.

NOTES: (1) Tests are performed on high speed automatic test equipment, at approximately 25°C junction temperature. The power dissipation of this product will

cause some parameters to shift when warmed up. See typical performance curves for over-temperature performance. (2) Limited output swing available at low supply

voltage. See Output voltage specifications. (3) Typical when all leads are soldered to a circuit board. See text for recommendations.

At TA = +25°C(1), VS = ±15V, unless otherwise noted.

BUF634P, U, T, F

LOW QUIESCENT CURRENT MODE WIDE BANDWIDTH MODE

PARAMETER CONDITION MIN TYP MAX MIN TYP MAX UNITS

INPUT

Offset Voltage ±30 ±100 ✻✻ mV

vs Temperature Specified Temperature Range ±100 ✻µV/°C

vs Power Supply VS = ±2.25V(2) to ±18V 0.1 1 ✻✻mV/V

Input Bias Current VIN = 0V ±0.5 ±2±5±20 µA

Input Impedance RL = 100Ω80 || 8 8 || 8 MΩ || pF

Noise Voltage f = 10kHz 4 ✻nV/√Hz

GAIN RL = 1kΩ, VO = ±10V 0.95 0.99 ✻✻ V/V

RL = 100Ω, VO = ±10V 0.85 0.93 ✻✻ V/V

RL = 67Ω, VO = ±10V 0.8 0.9 ✻✻ V/V

OUTPUT

Current Output, Continuous ±250 ✻mA

Voltage Output, Positive IO = 10mA (V+) –2.1 (V+) –1.7 ✻✻ V

Negative IO = –10mA (V–) +2.1 (V–) +1.8 ✻✻ V

Positive IO = 100mA (V+) –3 (V+) –2.4 ✻✻ V

Negative IO = –100mA (V–) +4 (V– ) +3.5 ✻✻ V

Positive IO = 150mA (V+) –4 (V+) –2.8 ✻✻ V

Negative IO = –150mA (V–) +5 (V–) +4 ✻✻ V

Short-Circuit Current ±350 ±550 ±400 ✻mA

DYNAMIC RESPONSE

Bandwidth, –3dB RL = 1kΩ30 180 MHz

RL = 100Ω20 160 MHz

Slew Rate 20Vp-p, RL = 100Ω2000 ✻V/µs

Settling Time, 0.1% 20V Step, RL = 100Ω200 ✻ns

1% 20V Step, RL = 100Ω50 ✻ns

Differential Gain

3.58MHz, V

= 0.7V, R

= 150Ω

4 0.4 %

Differential Phase

3.58MHz, V

= 0.7V, R

= 150Ω

2.5 0.1 °

POWER SUPPLY

Specified Operating Voltage ±15 ✻V

Operating Voltage Range ±2.25(2) ±18 ✻✻V

Quiescent Current, IQIO = 0 ±1.5 ±2±15 ±20 mA

TEMPERATURE RANGE

Specification –40 +85 ✻✻°C

Operating –40 +125 ✻✻°C

Storage –55 +125 ✻✻°C

Thermal Shutdown

Temperature, TJ175 ✻°C

Thermal Resistance,

JA “P” Package(3) 100 ✻°C/W

JA “U” Package(3) 150 ✻°C/W

JA “T” Package(3) 65 ✻°C/W

JC “T” Package 6 ✻°C/W

JA “F” Package(3) 65 ✻°C/W

JC “F” Package 6 ✻°C/W

BUF634

PIN CONFIGURATION

Top View 8-Pin Dip Package

SO-8 Surface-Mount Package Top View

Supply Voltage ..................................................................................... ±18V

Input Voltage Range ...............................................................................±VS

Output Short-Circuit (to ground) ................................................. Continuous

Operating Temperature .....................................................–40°C to +125°C

Storage Temperature ........................................................ –55°C to +125°C

Junction Temperature .......................................................................+150°C

Lead Temperature (soldering,10s)....................................................+300°C

NC = No Connection

V–

V+

G = 1

Any integrated circuit can be damaged by ESD. Burr-Brown

recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling

and installation procedures can cause damage.

ESD damage can range from subtle performance degrada-

tion to complete device failure. Precision integrated circuits

may be more susceptible to damage because very small

parametric changes could cause the device not to meet

published specifications.

ELECTROSTATIC

DISCHARGE SENSITIVITY

NOTE: Tab electrically

connected to V–.

G = 1 G = 1

V–V

V+

12345

5-Lead

TO-220

V–V

V+

12345

5-Lead DDPAK

Surface Mount

PACKAGE

DRAWING TEMPERATURE

PRODUCT PACKAGE NUMBER(1) RANGE

BUF634P 8-Pin Plastic DIP 006 –40°C to +85°C

BUF634U SO-8 Surface-Mount 182 –40°C to +85°C

BUF634T 5-Lead TO-220 315 –40°C to +85°C

BUF634F 5-Lead DDPAK 325 –40°C to +85°C

NOTE: (1) For detailed drawing and dimension table, please see end of data

sheet, or Appendix C of Burr-Brown IC Data Book.

PACKAGE/ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS

BUF634

GAIN and PHASE vs FREQUENCY

vs LOAD CAPACITANCE

Frequency (Hz)

1M 10M 100M 1G

Phase (°)

–10

–20

–30

–40

–50

= 0

= 50pF

= 200pF

= 1nF

–5

–10

–15

Gain (dB)

Wide BW Mode

= 100Ω

= 50Ω

= 10mV

GAIN and PHASE vs FREQUENCY

vs LOAD CAPACITANCE

Frequency (Hz)

1M 10M 100M 1G

Phase (°)

–10

–20

–30

–40

–50

= 0pF

= 50pF

= 200pF

= 1nF

–5

–10

–15

Gain (dB)

Low I

Mode R

= 100Ω

= 50Ω

= 10mV

GAIN and PHASE vs FREQUENCY

vs LOAD RESISTANCE

Frequency (Hz)

1M 10M 100M 1G

Phase (°)

–10

–20

–30

–40

–50

= 1kΩ

= 100Ω

= 50Ω

–5

–10

–15

Gain (dB)

= 50Ω

= 10mV

Wide BW

Low I

Wide BW

GAIN and PHASE vs FREQUENCY

vs SOURCE RESISTANCE

Frequency (Hz)

1M 10M 100M 1G

Phase (°)

–10

–20

–30

–40

–50

= 0Ω

= 50Ω

= 100Ω

–5

–10

–15

Gain (dB)

Wide BW

Low I

Wide BW

= 100Ω

= 10mV

GAIN and PHASE vs FREQUENCY

vs TEMPERATURE

Frequency (Hz)

1M 10M 100M 1G

Phase (°)

–10

–20

–30

–40

–50

= –40°C

= 25°C

= 125°C

–5

–10

–15

Gain (dB)

Wide BW

Low I

= 100Ω

= 50Ω

= 10mV

GAIN and PHASE vs FREQUENCY

vs QUIESCENT CURRENT

Frequency (Hz)

1M 10M 100M 1G

Phase (°)

–10

–20

–30

–40

–50

= 15mA

= 9mA

= 4mA

= 2.5mA

= 1.5mA

–5

–10

–15

Gain (dB)

= 100Ω

= 50Ω

= 10mV

TYPICAL PERFORMANCE CURVES

At TA = +25°C, VS = ±15V, unless otherwise noted.

BUF634

QUIESCENT CURRENT vs TEMPERATURE

Junction Temperature (°C)

–50 –25 0 25 50 75 100 125 150 175 200

Thermal Shutdown

≈10°C

Cooling

Wide BW Mode

Quiescent Current (mA)

QUIESCENT CURRENT vs TEMPERATURE

Quiescent Current (mA)

Junction Temperature (°C)

–50 –25 0 25 50 75 100 125 150 175 200

Cooling

Thermal Shutdown

Low I

Mode

≈10°C

GAIN and PHASE vs FREQUENCY

vs POWER SUPPLY VOLTAGE

Frequency (Hz)

1M 10M 100M 1G

Phase (°)

–10

–20

–30

–40

–50

= ±18V

= ±12V

= ±5V

= ±2.25V

–5

–10

–15

Gain (dB)

Wide BW

Low I

Wide BW

= 100Ω

= 50Ω

= 10mV

TYPICAL PERFORMANCE CURVES (CONT)

At TA = +25°C, VS = ±15V, unless otherwise noted.

POWER SUPPLY REJECTION vs FREQUENCY

100

01k 10k 100k 1M 10M

Fre

uenc

(

)

Wide BW

Low I

Power Supply Rejection (dB)

SHORT CIRCUIT CURRENT vs TEMPERATURE

500

450

400

350

300

250

200–50 –25 0 25 50 75 100 125 150

Junction Temperature (°C)

Wide Bandwidth Mode

Low I

Mode

Limit Current (mA)

QUIESCENT CURRENT

vs BANDWIDTH CONTROL RESISTANCE

Resistance (Ω)

10 100 1k 10k

Quiescent Current (mA)

15mA at R = 0

1.5mA at R = ∞

–15V

+15V

BUF634

OUTPUT VOLTAGE SWING vs OUTPUT CURRENT

–10

–11

–12

–13 0 50 100 150 200 250 300

|Output Current| (mA)

TJ = –40°C

TJ = 25°C

TJ = 125°C

VIN = 13V

VIN = –13V

VS = ±15V

Low IQ Mode

Output Voltage Swing (V)

TYPICAL PERFORMANCE CURVES (CONT)

At TA = +25°C, VS = ±15V, unless otherwise noted.

Wide BW

Mode

Low IQ

Mode

Input

Wide BW

Mode

Low IQ

Mode

Input

LARGE-SIGNAL RESPONSE

RS = 50Ω, RL = 100Ω

SMALL-SIGNAL RESPONSE

RS = 50Ω, RL = 100Ω

20ns/div 20ns/div

100mV/div 10V/div

OUTPUT VOLTAGE SWING vs OUTPUT CURRENT

–10

–11

–12

–13 0 50 100 150 200 250 300

|Output Current| (mA)

= –40°C

= 25°C

= 125°C

= 13V

= –13V

= ±15V

Wide BW Mode

Output Voltage Swing (V)

MAXIMUM POWER DISSIPATION vs TEMPERATURE

Ambient Temperature (°C)

0–50 –25 0 25 50 75 100 125 150

Power Dissipation (W)

TO-220 and DDPAK

Free Air

= 65°C/W

8-Pin DIP

= 100°C/W

SO-8

= 150°C/W

MAXIMUM POWER DISSIPATION vs TEMPERATURE

Ambient Temperature (°C)

Power Dissipation (W)

–50 –25 0 25 50 75 100 125 150

TO-220 and DDPAK

Infinite Heat Sink

= 6°C/W

TO-220 and DDPAK

Free Air

= 65°C/W

BUF634

APPLICATION INFORMATION

Figure 1 is a simplified circuit diagram of the BUF634

showing its open-loop complementary follower design.

FIGURE 2. Buffer Connections.

V–

10µF

BUF634

Optional connection for

wide bandwidth — see text.

V+

DIP/SO-8

Pinout shown

OUTPUT CURRENT

The BUF634 can deliver up to ±250mA continuous output

current. Internal circuitry limits output current to approxi-

mately ±350mA—see typical performance curve “Short

Circuit Current vs Temperature”. For many applications,

however, the continuous output current will be limited by

thermal effects.

The output voltage swing capability varies with junction

temperature and output current—see typical curves “Output

Voltage Swing vs Output Current.” Although all four pack-

age types are tested for the same output performance using

a high speed test, the higher junction temperatures with the

DIP and SO-8 package types will often provide less output

voltage swing. Junction temperature is reduced in the DDPAK

surface-mount power package because it is soldered directly

to the circuit board. The TO-220 package used with a good

heat sink further reduces junction temperature, allowing

maximum possible output swing.

THERMAL PROTECTION

Power dissipated in the BUF634 will cause the junction

temperature to rise. A thermal protection circuit in the

BUF634 will disable the output when the junction tempera-

ture reaches approximately 175°C. When the thermal pro-

tection is activated, the output stage is disabled, allowing the

device to cool. Quiescent current is approximately 6mA

during thermal shutdown. When the junction temperature

cools to approximately 165°C the output circuitry is again

enabled. This can cause the protection circuit to cycle on and

off with a period ranging from a fraction of a second to

several minutes or more, depending on package type, signal,

load and thermal environment.

The thermal protection circuit is designed to prevent damage

during abnormal conditions. Any tendency to activate the

thermal protection circuit during normal operation is a sign

of an inadequate heat sink or excessive power dissipation for

the package type.

TO-220 package provides the best thermal performance.

When the TO-220 is used with a properly sized heat sink,

output is not limited by thermal performance. See Applica-

tion Bulletin AB-037 for details on heat sink calculations.

The DDPAK also has excellent thermal characteristics. Its

mounting tab should be soldered to a circuit board copper

area for good heat dissipation. Figure 3 shows typical

thermal resistance from junction to ambient as a function of

the copper area. The mounting tab of the TO-220 and

DDPAK packages is electrically connected to the V– power

supply.

The DIP and SO-8 surface-mount packages are excellent for

applications requiring high output current with low average

power dissipation. To achieve the best possible thermal

performance with the DIP or SO-8 packages, solder the

device directly to a circuit board. Since much of the heat is

dissipated by conduction through the package pins, sockets

will degrade thermal performance. Use wide circuit board

traces on all the device pins, including pins that are not

connected. With the DIP package, use traces on both sides

of the printed circuit board if possible.

Figure 2 shows the BUF634 connected as an open-loop

buffer. The source impedance and optional input resistor,

RS, influence frequency response—see typical curves. Power

supplies should be bypassed with capacitors connected close

to the device pins. Capacitor values as low as 0.1µF will

assure stable operation in most applications, but high output

current and fast output slewing can demand large current

transients from the power supplies. Solid tantalum 10µF

capacitors are recommended.

High frequency open-loop applications may benefit from

special bypassing and layout considerations—see “High

Frequency Applications” at end of applications discussion.

FIGURE 1. Simplified Circuit Diagram.

200Ω

1(1)

V+

BW V–

150Ω

4kΩ

Signal path indicated in bold.

Note: (1) Stage currents are set by I

Thermal

Shutdown

BUF634

the quiescent current to approximately 15mA. Intermediate

bandwidths can be set by connecting a resistor in series with

the bandwidth control pin—see typical curve "Quiescent

Current vs Resistance" for resistor selection. Characteristics

of the bandwidth control pin can be seen in the simplified

circuit diagram, Figure 1.

The rated output current and slew rate are not affected by the

bandwidth control, but the current limit value changes slightly.

Output voltage swing is somewhat improved in the wide

bandwidth mode. The increased quiescent current when in

wide bandwidth mode produces greater power dissipation

during low output current conditions. This quiescent power

is equal to the total supply voltage, (V+) + |(V–)|, times the

quiescent current.

BOOSTING OP AMP OUTPUT CURRENT

The BUF634 can be connected inside the feedback loop of

most op amps to increase output current—see Figure 4.

When connected inside the feedback loop, the BUF634’s

offset voltage and other errors are corrected by the feedback

of the op amp.

To assure that the op amp remains stable, the BUF634’s

phase shift must remain small throughout the loop gain of

the circuit. For a G=+1 op amp circuit, the BUF634 must

contribute little additional phase shift (approximately 20° or

less) at the unity-gain frequency of the op amp. Phase shift

is affected by various operating conditions that may affect

stability of the op amp—see typical Gain and Phase curves.

Most general-purpose or precision op amps remain unity-

gain stable with the BUF634 connected inside the feedback

loop as shown. Large capacitive loads may require the

BUF634 to be connected for wide bandwidth for stable

operation. High speed or fast-settling op amps generally

require the wide bandwidth mode to remain stable and to

assure good dynamic performance. To check for stability

with an op amp, look for oscillations or excessive ringing on

signal pulses with the intended load and worst case condi-

tions that affect phase response of the buffer.

POWER DISSIPATION

Power dissipation depends on power supply voltage, signal

and load conditions. With DC signals, power dissipation is

equal to the product of output current times the voltage

across the conducting output transistor, VS – VO. Power

dissipation can be minimized by using the lowest possible

power supply voltage necessary to assure the required output

voltage swing.

For resistive loads, the maximum power dissipation occurs

at a DC output voltage of one-half the power supply voltage.

Dissipation with AC signals is lower. Application Bulletin

AB-039 explains how to calculate or measure power dissi-

pation with unusual signals and loads.

Any tendency to activate the thermal protection circuit

indicates excessive power dissipation or an inadequate heat

sink. For reliable operation, junction temperature should be

limited to 150°C, maximum. To estimate the margin of

safety in a complete design, increase the ambient tempera-

ture until the thermal protection is triggered. The thermal

protection should trigger more than 45°C above the maxi-

mum expected ambient condition of your application.

INPUT CHARACTERISTICS

Internal circuitry is protected with a diode clamp connected

from the input to output of the BUF634—see Figure 1. If the

output is unable to follow the input within approximately 3V

(such as with an output short-circuit), the input will conduct

increased current from the input source. This is limited by

the internal 200Ω resistor. If the input source can be dam-

aged by this increase in load current, an additional resistor

can be connected in series with the input.

BANDWIDTH CONTROL PIN

The –3dB bandwidth of the BUF634 is approximately 30MHz

in the low quiescent current mode (1.5mA typical). To select

this mode, leave the bandwidth control pin open (no connec-

tion).

Bandwidth can be extended to approximately 180MHz by

connecting the bandwidth control pin to V–. This increases

FIGURE 3. Thermal Resistance vs Circuit Board Copper Area.

Circuit Board Copper Area

BUF634F

Surface Mount Package

THERMAL RESISTANCE vs

CIRCUIT BOARD COPPER AREA

Thermal Resistance, θJA (°C/W)

012345

Copper Area (inches2)

BUF634F

Surface Mount Package

1oz copper

BUF634

HIGH FREQUENCY APPLICATIONS

The BUF634’s excellent bandwidth and fast slew rate make it

useful in a variety of high frequency open-loop applications.

When operated open-loop, circuit board layout and bypassing

technique can affect dynamic performance.

For best results, use a ground plane type circuit board layout

and bypass the power supplies with 0.1µF ceramic chip

capacitors at the device pins in parallel with solid tantalum

10µF capacitors. Source resistance will affect high-frequency

peaking and step response overshoot and ringing. Best

response is usually achieved with a series input resistor of

25Ω to 200Ω, depending on the signal source. Response

with some loads (especially capacitive) can be improved

with a resistor of 10Ω to 150Ω in series with the output.

OP AMP RECOMMENDATIONS

OPA177, OPA1013 Use Low IQ mode. G = 1 stable.

OPA111, OPA2111

OPA121, OPA234(1),

OPA130(1)

OPA27, OPA2107 Low IQ mode is stable. Increasing CL may cause

OPA602, OPA131(1) excessive ringing or instability. Use Wide BW mode.

OPA627, OPA132(1) Use Wide BW mode, C1 = 200pF. G = 1 stable.

OPA637, OPA37 Use Wide BW mode. These op amps are not G = 1

stable. Use in G > 4.

NOTE: (1) Single, dual, and quad versions.

OPA

NOTE: (1) C

not required

for most common op amps.

Use with unity-gain stable

high speed op amps.

V+

V–

BUF634

1(1)

Wide BW mode

(if required)

FIGURE 5. High Performance Headphone Driver.

FIGURE 8. Bridge-Connected Motor Driver.

1/2

OPA2234

9kΩ

BUF634

1kΩ

±1V

Motor

1/2

OPA2234

BUF634

10kΩ

±20V

at 250mA

FIGURE 7. Current-Output Valve Driver.

OPA177

BUF634

Valve

±2V

10Ω

= ±200mA

FIGURE 4. Boosting Op Amp Output Current.

(1)

pseudo

ground

12V

–

BUF634

10kΩ

10µF

+24V 10kΩ

12V

–

NOTE: (1) System bypass capacitors.

FIGURE 6. Pseudo-Ground Driver.

OPA132 Drives headphones

or small speakers.

5kΩ

BUF634

100kΩ

1µF

= 100Ω

1kHz

20kHz

THD+N

0.015%

0.02%

250ΩG = +21

V–

V+

PACKAGING INFORMATION

Orderable Device Status (1) Package

Type Package

Drawing Pins Package

Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)

BUF634F OBSOLETE DDPAK/

TO-263 KTT 5 TBD Call TI Call TI

BUF634F/500 ACTIVE DDPAK/

TO-263 KTT 5 500 Pb-Free

(RoHS) CU SN Level-2-260C-1 YEAR

BUF634F/500E3 ACTIVE DDPAK/

TO-263 KTT 5 500 Pb-Free

(RoHS) CU SN Level-2-260C-1 YEAR

BUF634FKTTT ACTIVE DDPAK/

TO-263 KTT 5 50 TBD Call TI Call TI

BUF634FKTTTE3 ACTIVE DDPAK/

TO-263 KTT 5 50 TBD Call TI Call TI

BUF634P ACTIVE PDIP P 8 50 Green (RoHS &

no Sb/Br) CU NIPDAU N / A for Pkg Type

BUF634PG4 ACTIVE PDIP P 8 50 Green (RoHS &

no Sb/Br) CU NIPDAU N / A for Pkg Type

BUF634T ACTIVE TO-220 KC 5 49 TBD Call TI Call TI

BUF634TG3 ACTIVE TO-220 KC 5 49 TBD Call TI Call TI

BUF634U ACTIVE SOIC D 8 75 Green (RoHS &

no Sb/Br) CU NIPDAU Level-3-260C-168 HR

BUF634U/2K5 ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br) CU NIPDAU Level-3-260C-168 HR

BUF634U/2K5E4 ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br) CU NIPDAU Level-3-260C-168 HR

BUF634UE4 ACTIVE SOIC D 8 75 Green (RoHS &

no Sb/Br) CU NIPDAU Level-3-260C-168 HR

(1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in

a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check

http://www.ti.com/productcontent for the latest availability information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements

for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered

at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and

package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS

compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame

retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder

temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is

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PACKAGE OPTION ADDENDUM

www.ti.com 26-Mar-2010

Addendum-Page 1

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PACKAGE OPTION ADDENDUM

www.ti.com 26-Mar-2010

Addendum-Page 2

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package

Type Package

Drawing Pins SPQ Reel

Diameter

(mm)

Reel

Width

W1 (mm)

(mm) B0

(mm) K0

(mm) P1

(mm) W

(mm) Pin1

Quadrant

BUF634U/2K5 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

PACKAGE MATERIALS INFORMATION

www.ti.com 14-Jul-2012

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

BUF634U/2K5 SOIC D 8 2500 367.0 367.0 35.0

PACKAGE MATERIALS INFORMATION

www.ti.com 14-Jul-2012

Pack Materials-Page 2

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